J. Semicond. > 2015, Volume 36 > Issue 6 > 062002
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SEMICONDUCTOR PHYSICS

Leakage of photocurrent: an alternative view on I-V curves of solar cells

Taofei Zhou, Kanglin Xiong, Min Zhang, Lei Liu, Feifei Tian, Zhiqiang Zhang, Hong Gu, Jun Huang, Jianfeng Wang, Jianrong Dong and Ke Xu

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 Corresponding author: Ke Xu, Email: kxu2006@sinano.ac.cn

DOI: 10.1088/1674-4926/36/6/062002

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Abstract: An alternative way is proposed to interpret I-V characteristics of GaInP single-junction solar cells by position-dependent leakage of photocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one-diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.

Key words: GaInP single-junction solar cells, I-V characteristics, open-circuit voltage



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Fig. 1.  (a) Schematic diagram of a solar cell. (b) Equivalent circuit model of the device.

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Fig. 2.  Electroluminescence images of samples (a) A and (b) B. The bias current is 50 mA.

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Fig. 3.  Typical $I$-$V$ curves of sample (a) A and (b) B. The illumination distribution remains unchanged while the intensity increases from $a$ to $e$.

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Fig. 4.  Extracted parameters for one-diode model from $I$-$V$ curves. (a) Fill factor and open circuit voltage. (b) Reverse-saturate current and ideal factor.

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Fig. 5.  Measured $I$-$V$ characteristics of sample A and one calculated using one-diode model with parameters extracted from dark $I$-$V$. Each curve is divided into four sections (S1 to S4) by three transit regions (a,b and c).

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Fig. 6.  Short-circuit current versus the critical terminal voltage (see region a in Figure 5) and $I$-$V$ for samples A ($A,a$) and B ($B,b$).

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Fig. 7.  (a) Illumination-position-dependent $I$-$V$ curves of samples A and B. The arrows indicate the distances between the light strip and the bus electrode increase for each $I$-$V$ curve. (b) Critical terminal voltage and effective spreading resistance extracted from the $I$-$V$ curves in (a). The resistance per length ($\rho$) is obtained by a linear fitting to the effective spreading resistance.

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    Received: 27 November 2014 Revised: Online: Published: 01 June 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(6): 062002
      Taofei Zhou, Kanglin Xiong, Min Zhang, Lei Liu, Feifei Tian, Zhiqiang Zhang, Hong Gu, Jun Huang, Jianfeng Wang, Jianrong Dong, Ke Xu. Leakage of photocurrent: an alternative view on I-V curves of solar cells[J]. Journal of Semiconductors, 2015, 36(6): 062002. doi: 10.1088/1674-4926/36/6/062002 ****T F Zhou, K L Xiong, M Zhang, L Liu, F F Tian, Z Q Zhang, H Gu, J Huang, J F Wang, J R Dong, K Xu. Leakage of photocurrent: an alternative view on I-V curves of solar cells[J]. J. Semicond., 2015, 36(6): 062002. doi: 10.1088/1674-4926/36/6/062002.
      Citation:
      Taofei Zhou, Kanglin Xiong, Min Zhang, Lei Liu, Feifei Tian, Zhiqiang Zhang, Hong Gu, Jun Huang, Jianfeng Wang, Jianrong Dong, Ke Xu. Leakage of photocurrent: an alternative view on I-V curves of solar cells[J]. Journal of Semiconductors, 2015, 36(6): 062002. doi: 10.1088/1674-4926/36/6/062002 ****
      T F Zhou, K L Xiong, M Zhang, L Liu, F F Tian, Z Q Zhang, H Gu, J Huang, J F Wang, J R Dong, K Xu. Leakage of photocurrent: an alternative view on I-V curves of solar cells[J]. J. Semicond., 2015, 36(6): 062002. doi: 10.1088/1674-4926/36/6/062002.
      shu

      Leakage of photocurrent: an alternative view on I-V curves of solar cells

      DOI: 10.1088/1674-4926/36/6/062002
      Funds:

      Project supported by the Union Innovation Projects of Jiangsu Province (No. BY2011182) and CAS, the National Basic Research Program (No. 2012CB619305), and the National Natural Science Foundation of China (Nos. 51272275, 51302305, 61376065).

      More Information
      • Corresponding author: Email: kxu2006@sinano.ac.cn
      • Received Date: 2014-11-27
      • Accepted Date: 2014-12-17
      • Published Date: 2015-01-25

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