J. Semicond. > 2015, Volume 36 > Issue 7 > 072001

SEMICONDUCTOR PHYSICS

Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling

A. J. Fotue1, N. Issofa1, M. Tiotsop1, S. C. Kenfack1, M. P. Tabue Djemmo1, 3, H. Fotsin2 and L. C. Fai1

+ Author Affiliations

 Corresponding author: A. J. Fotue, E-mail: A. J. Fotue: fotuea@yahoo.fr

DOI: 10.1088/1674-4926/36/7/072001

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Abstract: We investigated the influence of electric field and magnetic field on the ground state energy of polaron in spherical semiconductor quantum dot (QD) using a modified Lee Low Pines (LLP) method. The numerical results show the increase of the ground state energy with the increase of the electric field and the decreasing with the magnetic field. The modulation of the electric field, magnetic field and the confinement lengths lead to the control of the decoherence of the system.

Key words: electric field, magnetic field, modified LLP, polaron energy, quantum dot



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Fig. 1.  Ground state energy $\varepsilon _{\rm g}$ as a function of cyclotron frequency $\omega _{\rm c}$ (a) for $l_2$ $=$ 0.35 and $l_2$ $=$ 0.75 and fixed $\alpha$ $=$ 6.5 and $l_1$ $=$ 0.25,$E=2.5$ and (b) for $l_2 =$ 0.35 and $l_2 =$ 0.75 and fixed $\alpha =$ 6.5 and $l_1 =$ 0.25,$E=$ 10.

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Fig. 2.  Ground state energy $\varepsilon _{\rm g}$ as a function of electric field $E$ (a) for $l_2 =$ 0.35 and $l_2 =$ 0.75 and fixed $\alpha =$ 6.5 and $l_1 =$ 0.25, $\omega _{\rm c} =$ 0.5 and (b) for $l_2 =$ 0.35 and $l_2 =$ 0.75 and fixed $\alpha =$ 6.5 and $l_1 =$ 0.25, $\omega _{\rm c} =$ 2.5.

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Fig. 3.  Ground state energy $\varepsilon _{\rm g}$ as a function of electron--phonon coupling strength $\alpha $ (a) for $\omega _{\rm c} =$ 0.5 and $\omega _{\rm c} =$ 3.5 and fixed $E=$ 0.5, $l_1 =$ 0.55, $l_2 =$ 0.25 and (b) for $E=$ 1.0 and $E=$ 2.5 and fixed $\omega _{\rm c} =$ 1.0, $l_1 =$ 0.55, $l_2 =$ 0.25.

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    Received: 10 March 2015 Revised: Online: Published: 01 July 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(7): 072001
      A. J. Fotue, N. Issofa, M. Tiotsop, S. C. Kenfack, M. P. Tabue Djemmo, H. Fotsin, L. C. Fai. Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling[J]. Journal of Semiconductors, 2015, 36(7): 072001. doi: 10.1088/1674-4926/36/7/072001 ****A. J. Fotue, N. Issofa, M. Tiotsop, S. C. Kenfack, M. P. T. Djemmo, H. Fotsin, L. C. Fai. Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling[J]. J. Semicond., 2015, 36(7): 072001. doi:  10.1088/1674-4926/36/7/072001.
      Citation:
      A. J. Fotue, N. Issofa, M. Tiotsop, S. C. Kenfack, M. P. Tabue Djemmo, H. Fotsin, L. C. Fai. Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling[J]. Journal of Semiconductors, 2015, 36(7): 072001. doi: 10.1088/1674-4926/36/7/072001 ****
      A. J. Fotue, N. Issofa, M. Tiotsop, S. C. Kenfack, M. P. T. Djemmo, H. Fotsin, L. C. Fai. Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling[J]. J. Semicond., 2015, 36(7): 072001. doi:  10.1088/1674-4926/36/7/072001.
      shu

      Electric and magnetic optical polaron in quantum dot——Part 1: strong coupling

      DOI: 10.1088/1674-4926/36/7/072001
      • 1.

        Mesoscopic and Multilayers Structures Laboratory, Department of Physics, Faculty of Science, University of Dschang, P. O. Box 479, Dschang, Cameroon

      • 2.

        Laboratory of Electronics and Signal Processing, Department of Physics, Faculty of Science, University of Dschang, P. O. Box 67, Dschang, Cameroon

      • 3.

        Laboratory of Mechanics and Modeling of Physical Systems, Faculty of Science, University of Dschang, P. O. Box 67, Dschang, Cameroon

      More Information
      • Corresponding author: E-mail: A. J. Fotue: fotuea@yahoo.fr
      • Received Date: 2015-03-10
      • Accepted Date: 2015-04-23
      • Published Date: 2015-01-25

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