Citation: |
Shuo Wang, Xinnian Zheng, Hao Yang, Haiying Zhang. A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor[J]. Journal of Semiconductors, 2015, 36(7): 075001. doi: 10.1088/1674-4926/36/7/075001
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S Wang, X N Zheng, H Yang, H Y Zhang. A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor[J]. J. Semicond., 2015, 36(7): 075001. doi: 10.1088/1674-4926/36/7/075001.
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A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor
DOI: 10.1088/1674-4926/36/7/075001
More Information
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Abstract
A two-stage monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) fabricated in 0.5 μm GaAs pHEMT is presented. The Miller effect introduced by the parasitic gate-drain capacitance is utilized to decrease the value of the input inductor. Additionally, the input on-chip inductor is a novel high Q gradual structure. The noise figure is reduced with these two methods. With good input and output matching, the LNA achieves a noise figure of 0.75 dB and a small signal gain of 32.7 dB over 698-806 MHz. The input 1 dB compression point is -21.8 dBm and the input third order interception point is -10 dBm.-
Keywords:
- LNA,
- pHEMT,
- Miller effect,
- gradual inductor
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] -
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