Fig1.
Photograph of the W-band GaN MMIC PA.
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| Citation: |
Peng Xu, Xubo Song, Yuanjie Lü, Yuangang Wang, Shaobo Dun, Jiayun Yin, Yulong Fang, Guodong Gu, Zhihong Feng, Shujun Cai. W-band GaN MMIC PA with 257 mW output power at 86.5 GHz[J]. Journal of Semiconductors, 2015, 36(8): 085009. doi: 10.1088/1674-4926/36/8/085009
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P Xu, X B Song, Y Lü, Y G Wang, S B Dun, J Y Yin, Y L Fang, G D Gu, Z H Feng, S J Cai. W-band GaN MMIC PA with 257 mW output power at 86.5 GHz[J]. J. Semicond., 2015, 36(8): 085009. doi: 10.1088/1674-4926/36/8/085009.
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W-band GaN MMIC PA with 257 mW output power at 86.5 GHz
DOI: 10.1088/1674-4926/36/8/085009
More Information
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Abstract
A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. In order to manage coupling effects between all the parts of the W-band MMIC, all matching and bias networks have been first optimized using circuit simulating software and then systematically simulated on 3D full-wave electromagnetic simulator. The fabricated MMIC PA achieves a 257 mW output power at 86.5 GHz in continuous-wave mode, with an associated power added efficiency of 5.4% and an associated power gain of 6.1 dB. The power density is 459 mW/mm. Moreover, the MMIC PA offers over 100 mW in the 83-90 GHz bandwidth. Those performances were measured at drain bias of 12 V.-
Keywords:
- W-band,
- MMIC,
- GaN,
- power amplifier
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References
[1] [2] [3] [4] [5] [6] [7] -
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