J. Semicond. > 2015, Volume 36 > Issue 9 > 093006
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SEMICONDUCTOR MATERIALS

Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method

Rui Yang, Wanqi Jie, Xiaoyan Sun and Min Yang

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 Corresponding author: Jie Wanqi, jwq@nwpu.edu.cn

DOI: 10.1088/1674-4926/36/9/093006

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Abstract: The properties of undoped, Cr-doped, and In-doped bulk ZnTe crystals grown by the TGSG method were compared. Cr/In-doping leads to a slight red-shift of the absorption edge. Cr-doping also creates two characteristic absorption bands, centered at about 1750 nm and beneath the fundamental absorption edge. However, the fundamental reflectance spectra are not sensitive to the dopants. The resistivity of undoped, Cr-doped, and In-doped ZnTe is about 102 Ω · cm, 103 Ω · cm, and 108 Ω · cm, respectively. Only In-doped ZnTe has an IR transmittance higher than 60% in the range of 500 to 4000 cm-1. However, the IR transmittance of Cr-doped ZnTe is very low and decreases greatly as the wavenumber increases, which is mainly attributed to the scattering effects caused by some defects generated by Cr-doping.

Key words: ZnTe, Cr/In doping, crystal growth, defect, electrical and optical properties



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Fig. 1.  Typical visible light transmittance image of the as-grown ZnTe ingot.

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Fig. 2.  Typical cross section images of axial cut wafers. (a),(b) Cr-doped. (c) Undoped. (d) In-doped. (e)-(h) Corresponding images after surface polishing.

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Fig. 3.  Typical UV-Vis-NIR transmittance spectra of undoped,Cr-doped (ZT1 and ZT2),and In-doped ZnTe crystals. Inset is an enlarged view of the area near the fundamental absorption edge.

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Fig. 4.  Typical reflectance spectra of undoped,Cr- and In-doped ZnTe crystals measured from 200 to 600 nm.

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Fig. 5.  Typical SEM image of sheet-like microstructures revealed near the crystal/solvent interfaceof Cr-doped ZnTe after etched with 2HF/1H$_{2}$O$_{2}$/7H$_{2}$O.

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Fig. 6.  (Color online) Typical FTIR spectra of the crystals (a) ZT1,(b) ZT2,(c) undoped ZnTe,and (d) In-doped ZnTe.

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Fig. 7.  Cellular structures of ZT1. (a) An enlarged segment of unpolished wafer surface. (b) Corresponding transmittance light images after polishing both sides surfaces. (c) Corresponding SEM image after being etched with 2HF/1H$_{2}$O$_{2}$/7H$_{2}$O.

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Fig. 8.  SEM images of the second phase particles in ZT2.

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Fig. 9.  Typical cross section view of the axially cut undoped ZnTe wafer that contains cellular structures.

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Table 1.   The average value of transmittance difference between 500 and 4000 cm$^{-1}$.

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Table 2.   Resistivity of the crystals.

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    Received: 22 December 2014 Revised: Online: Published: 01 September 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(9): 093006
      Rui Yang, Wanqi Jie, Xiaoyan Sun, Min Yang. Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method[J]. Journal of Semiconductors, 2015, 36(9): 093006. doi: 10.1088/1674-4926/36/9/093006 ****R Yang, W Q Jie, X Y Sun, M Yang. Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method[J]. J. Semicond., 2015, 36(9): 093006. doi: 10.1088/1674-4926/36/9/093006.
      Citation:
      Rui Yang, Wanqi Jie, Xiaoyan Sun, Min Yang. Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method[J]. Journal of Semiconductors, 2015, 36(9): 093006. doi: 10.1088/1674-4926/36/9/093006 ****
      R Yang, W Q Jie, X Y Sun, M Yang. Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method[J]. J. Semicond., 2015, 36(9): 093006. doi: 10.1088/1674-4926/36/9/093006.
      shu

      Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method

      DOI: 10.1088/1674-4926/36/9/093006

      • State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

      Funds:

      Project supported by the National Basic Research Program of China (No. 2011CB610406), the National Natural Science Foundation of China (No. 51372205), the 111 Project of China (No. B08040), the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20116102120014), and the NWPU Foundation for Fundamental Research and the Research Fund of the State Key Laboratory of Solidification Processing (NWPU).

      More Information
      • Corresponding author: Jie Wanqi, jwq@nwpu.edu.cn
      • Received Date: 2014-12-22
      • Accepted Date: 2015-04-20
      • Published Date: 2015-01-25

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