J. Semicond. > 2015, Volume 36 > Issue 9 > 094011
|

SEMICONDUCTOR DEVICES

A novel PIN photodetector with double linear arrays for rainfall prediction

Yan Yao1, Xiong Liu1, Li Yuan2, Zhaohua Zhang1, and Tianling Ren2

+ Author Affiliations

 Corresponding author: Zhang Zhaohua, zhangzhaohua@binn.cas.cn;Ren Tianling, RenTL@tsinghua.edu.cn

DOI: 10.1088/1674-4926/36/9/094011

PDF

Abstract: A novel PIN (positive-intrinsic-negative) photodetector with double linear arrays that can be used to measure the diameter of precipitation particles and the space between two droplets in clouds is proposed. The sensitive unit is the PIN photodiode. The chip with a size of 10 × 8 mm2 has 128 photodiodes, and each row has 64 photodiodes. The device design, fabrication process and package are introduced in the paper. The photocurrent of the packaged chip was systematically tested with a red laser. Also the diameter of one water drop and the space between two water drops were measured. The minimum raindrop diameter which can be tested in this paper is 100μm. This device can be useful for rainfall prediction.

Key words: PIN, photodetector, double linear arrays, rainfall prediction



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
Fig. 1.  (Color online) Structure images of the device. (a) Layout of the chip. (b) Detailed drawing of the layout focusing on photodiodes.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Package images of the device. (a) Photograph showing the single chip. (b) An enlarged view of the bonding. (c) A chip fixed on the PCB. (d) Photodetector photograph of the sealed chip.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  A schematic illustration of the diameter measurement for a particle.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  A schematic illustration of a particle passing through the photodetector.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Fabrication process of the PIN photodiode. (a) The epitaxial wafer preparation. (b) Oxidation and low ion implantation. (c) High ion implantation. (d) Anti-reflection coating deposition. (e) Al electrode pole preparation and isolation trench etching.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  Measuring results of the diameter of a raindrop. (a) A comparison diagram of photocurrent and dark current for a row of photodiodes. (b) Diameter measurement for a water drop.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  The time measurement of a water drop to pass the two rows of photodiodes.

DownLoad: Full-Size Img PowerPoint
Fig. 8.  The time measurement for two water drops to pass a row of photodiodes.

DownLoad: Full-Size Img PowerPoint
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3202 Times PDF downloads: 18 Times Cited by: 0 Times

    History

    Received: 02 March 2015 Revised: Online: Published: 01 September 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(9): 094011
      Yan Yao, Xiong Liu, Li Yuan, Zhaohua Zhang, Tianling Ren. A novel PIN photodetector with double linear arrays for rainfall prediction[J]. Journal of Semiconductors, 2015, 36(9): 094011. doi: 10.1088/1674-4926/36/9/094011 ****Y Yao, X Liu, L Yuan, Z H Zhang, T L Ren. A novel PIN photodetector with double linear arrays for rainfall prediction[J]. J. Semicond., 2015, 36(9): 094011. doi: 10.1088/1674-4926/36/9/094011.
      Citation:
      Yan Yao, Xiong Liu, Li Yuan, Zhaohua Zhang, Tianling Ren. A novel PIN photodetector with double linear arrays for rainfall prediction[J]. Journal of Semiconductors, 2015, 36(9): 094011. doi: 10.1088/1674-4926/36/9/094011 ****
      Y Yao, X Liu, L Yuan, Z H Zhang, T L Ren. A novel PIN photodetector with double linear arrays for rainfall prediction[J]. J. Semicond., 2015, 36(9): 094011. doi: 10.1088/1674-4926/36/9/094011.
      shu

      A novel PIN photodetector with double linear arrays for rainfall prediction

      DOI: 10.1088/1674-4926/36/9/094011
      • 1.

        Integrated Micro/Nano Systems Laboratory, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61434001) and the ‘Thousands Talents’Program for Pioneer Researchers and Its Innovation Team, China.

      More Information
      • Corresponding author: Zhang Zhaohua, zhangzhaohua@binn.cas.cn;Ren Tianling, RenTL@tsinghua.edu.cn
      • Received Date: 2015-03-02
      • Accepted Date: 2015-04-08
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return