Fig. 1.
The vertical structure design of reference and new LDs.
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| Citation: |
Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Ming Shi, Danmei Zhao, Wei Liu. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer[J]. Journal of Semiconductors, 2016, 37(1): 014007. doi: 10.1088/1674-4926/37/1/014007
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X Li, D G Zhao, D S Jiang, P Chen, Z S Liu, J J Zhu, M Shi, D M Zhao, W Liu. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer[J]. J. Semicond., 2016, 37(1): 014007. doi: 10.1088/1674-4926/37/1/014007.
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Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer
DOI: 10.1088/1674-4926/37/1/014007
More Information
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Abstract
Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency.-
Keywords:
- quantum well,
- laser diodes,
- electron leakage,
- electron energy
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
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