Citation: |
Kewei Cao, Binglei Fu, Zhe Liu, Lixia Zhao, Jinmin Li, Junxi Wang. Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes[J]. Journal of Semiconductors, 2016, 37(1): 014008. doi: 10.1088/1674-4926/37/1/014008
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K W Cao, B L Fu, Z Liu, L X Zhao, J M Li, J X Wang. Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes[J]. J. Semicond., 2016, 37(1): 014008. doi: 10.1088/1674-4926/37/1/014008.
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Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes
DOI: 10.1088/1674-4926/37/1/014008
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Abstract
The origin of anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes was studied. We found that the intensity of the electroluminescence and photoluminescence spectra were both increased in the very beginning period of aging. With the help of a rate-equation model, we concluded that this kind of luminescence efficiency enhancement is a joint effect of the defect reduction in active layers and the changes out of active layers, for example the Mg acceptor annealing.-
Keywords:
- light emitting diodes,
- aging,
- rate-equation model,
- defect reduction
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References
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