Citation: |
Jiahui Zhou, Hudong Chang, Xufang Zhang, Jingzhi Yang, Guiming Liu, Haiou Li, Honggang Liu. Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology[J]. Journal of Semiconductors, 2016, 37(2): 024005. doi: 10.1088/1674-4926/37/2/024005
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J H Zhou, H D Chang, X F Zhang, J Z Yang, G M Liu, H O Li, H G Liu. Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology[J]. J. Semicond., 2016, 37(2): 024005. doi: 10.1088/1674-4926/37/2/024005.
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Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology
DOI: 10.1088/1674-4926/37/2/024005
More Information
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Abstract
A novel radio frequency (RF) switch device has been successfully fabricated using InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/mm, a turn-on resistance of 0.72 mΩ · mm2 and a drain current on-off (Ion/Ioff) ratio of 1 × 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application.-
Keywords:
- RF switch,
- InGaAs,
- MOSFET,
- III-V CMOS
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References
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