J. Semicond. > 2016, Volume 37 > Issue 2 > 024005
|

SEMICONDUCTOR DEVICES

Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

Jiahui Zhou1, 2, Hudong Chang2, Xufang Zhang1, Jingzhi Yang1, Guiming Liu1, Haiou Li2, and Honggang Liu1,

+ Author Affiliations

 Corresponding author: Haiou Li, seagull_1228@163.com; Corresponding author. Email: liuhonggang@ime.ac.cn

DOI: 10.1088/1674-4926/37/2/024005

PDF

Abstract: A novel radio frequency (RF) switch device has been successfully fabricated using InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/mm, a turn-on resistance of 0.72 mΩ · mm2 and a drain current on-off (Ion/Ioff) ratio of 1 × 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application.

Key words: RF switch, InGaAs, MOSFET, III-V CMOS



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
Fig. 1.  Schematic cross section of the In$_{0.4}$Ga$_{0.6}$As MOSFET with 10-nm Al$_{2}$O$_{3}$.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (a) The micrograph of RF switch device. (b) The device equivalent circuit.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  DC $I$-$V$ characteristics of the In$_{0.4}$Ga$_{0.6}$As MOSFET switch.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (a) The drain current and extrinsic transconductance versus gate bias for In$_{0.4}$Ga$_{0.6}$As MOSFET with 10-nm Al$_{2}$O$_{3}$ at $V_{\rm DS}$ $=$ 2 V. (b) The $I_{\rm on}/I_{\rm off}$ ratio for In$_{0.4}$Ga$_{0.6}$As MOSFETs at $V_{\rm DS}$ $=$ 50 mV.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (a) Gate leakage characteristics of the switch with both source and drain grounded. (b) The drain current gate bias for In$_{0.4}$Ga$_{0.6}$As MOSFET at $V_{\rm DS}$ $=$ 1 V.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (a) Insertion loss and Return loss of device in the on-state at 2 V gate bias. (b) Isolation of device in the off-state at $-2$ V gate bias.

DownLoad: Full-Size Img PowerPoint
DownLoad: CSV
DownLoad: CSV
DownLoad: CSV

Table 1.   The comparison between proposed MOSFET switches and conventional GaAs HEMT switches in the range from 0.1 to 3 GHz.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3495 Times PDF downloads: 24 Times Cited by: 0 Times

    History

    Received: 01 June 2015 Revised: Online: Published: 01 February 2016

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2016  >  37(2): 024005
      Jiahui Zhou, Hudong Chang, Xufang Zhang, Jingzhi Yang, Guiming Liu, Haiou Li, Honggang Liu. Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology[J]. Journal of Semiconductors, 2016, 37(2): 024005. doi: 10.1088/1674-4926/37/2/024005 ****J H Zhou, H D Chang, X F Zhang, J Z Yang, G M Liu, H O Li, H G Liu. Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology[J]. J. Semicond., 2016, 37(2): 024005. doi: 10.1088/1674-4926/37/2/024005.
      Citation:
      Jiahui Zhou, Hudong Chang, Xufang Zhang, Jingzhi Yang, Guiming Liu, Haiou Li, Honggang Liu. Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology[J]. Journal of Semiconductors, 2016, 37(2): 024005. doi: 10.1088/1674-4926/37/2/024005 ****
      J H Zhou, H D Chang, X F Zhang, J Z Yang, G M Liu, H O Li, H G Liu. Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology[J]. J. Semicond., 2016, 37(2): 024005. doi: 10.1088/1674-4926/37/2/024005.
      shu

      Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

      DOI: 10.1088/1674-4926/37/2/024005

      • Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

      More Information

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return