Citation: |
Xian Ji, Weihua Kang, Xiaodong Zhang, Zhili Zhang, Jiahui Zhou, Wenjun Xu, Qi Li, Gongli Xiao, Zhijun Yin, Yong Cai, Baoshun Zhang, Haiou Li. Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process[J]. Journal of Semiconductors, 2016, 37(2): 024006. doi: 10.1088/1674-4926/37/2/024006
****
X Ji, W H Kang, X D Zhang, Z L Zhang, J H Zhou, W J Xu, Q Li, G L Xiao, Z J Yin, Y Cai, B S Zhang, H O Li. Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process[J]. J. Semicond., 2016, 37(2): 024006. doi: 10.1088/1674-4926/37/2/024006.
|
Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process
DOI: 10.1088/1674-4926/37/2/024006
More Information
-
Abstract
An 80-nm gate length metamorphic high electron mobility transistor (mHEMT) on a GaAs substrate with high indium composite compound-channels In0.7Ga0.3As/In0.6Ga0.4As and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm2/(V· s) and a sheet density of 3.5 × 1012 cm-2 at 300 K have been achieved. The device's T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance Rc is 0.2 Ω ·mm when using the same metal system with the gate (Pt/Ti/Pt/Au), which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 246 and 301 GHz, respectively. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
Proportional views