A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

Mengxuan Jiang; Z. John Shen; Jun Wang; Xin Yin; Zhikang Shuai; Jiang Lu

doi:10.1088/1674-4926/37/2/024011

J. Semicond. > 2016, Volume 37 > Issue 2 > 024011

SEMICONDUCTOR DEVICES

A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

Mengxuan Jiang^1,, Z. John Shen¹, Jun Wang¹, Xin Yin¹, Zhikang Shuai¹ and Jiang Lu²

+ Author Affiliations

Corresponding author: Mengxuan Jiang, Email: mengxuanjiang@qq.com

DOI: 10.1088/1674-4926/37/2/024011

Abstract: This letter proposes a high-conductivity insulated gate bipolar transistor (HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT (FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.

Key words: breakdown voltage, conductivity modulation, current density, latch up, IGBT

References

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Fig. 1. (a) Proposed HC-IGBT and (b) conventional FS-IGBT structures.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Forward-blocking characteristics of the HC-IGBT and FS-IGBT at a gate voltage of 0 V. The inset of Figure 2 shows the breakdown voltage of the HC-IGBT varies with the work function of the emitter metal.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Potential distribution of the HC-IGBT and FS-IGBT along the vertical direction between the emitter metal, the n

$^+$ source, the p-base, and part of the n-drift region under the avalanche conditions.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Forward-conduction characteristics of the HC-IGBT and FS-IGBT at a gate voltage of 15 V. The inset of Figure 4 shows the conductivity modulation effect of the HC-IGBT changes with the work function of the emitter metal.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Potential distribution of the HC-IGBT and FS-IGBT along the vertical direction between the emitter metal, the n

$^+$ source, the p-base, and part of the n-drift region at a current density of 150 A/cm

$^2$ .

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) Hole concentration distribution of the HC-IGBT and FS-IGBT along the vertical direction of the n-type drift region at 150 A/cm

$^2$ .

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) Transfer characteristics of the HC-IGBT and FS-IGBT at collector voltage of 1.64 V.

DownLoad: Full-Size Img PowerPoint

Fig. 8. (Color online) Turn-off test circuit. The DC bus voltage is set at 600 V, the gate voltage is set at

$\pm$ 15 V, the load current density at 150 A/cm

$^2$ and the stray inductance at 60 nH and the gate resistor at 5

$\Omega$ .

DownLoad: Full-Size Img PowerPoint

Fig. 9. (Color online) Turn-off waveforms of the HC-IGBT and FS-IGBT at a current density of 150 A/cm

$^2$ , a bus voltage of 600 V, stray inductance of 10 nH and agate voltage of 15 V.

DownLoad: Full-Size Img PowerPoint

Fig. 10. Turn-off losses characteristics of the HC-IGBT and FS-IGBT by varying p

$^+$ collector concentration at current density of 150 A/cm

$^2$ , bus voltage of 600 V, gate resistor of 5

$\Omega$ and stray inductance of 60 nH.

DownLoad: Full-Size Img PowerPoint

Fig. 11. Color online) FBSOA test of the HC-IGBT at gate voltage of 15 V. The conventional FS-IGBT with the same conditions is also included for comparison.

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Fig. 12. (Color online) RBSOA switching waveforms of the HC-IGBT and FS-IGBT at a current density of 1200 A/cm

$^2$ , a bus voltage of 1000 V, stray inductance of 10 nH and thermal resistance of 20 ℃/cm

$^2$

$\cdot$ kW.

DownLoad: Full-Size Img PowerPoint

Fig. 13. (Color online) Short-circuit switching waveforms of the HC-IGBT and FS-IGBT at gate voltage of 15 V, bus voltage of 600 V, gate resistor of 5

$\Omega$ , stray inductance of 10 nH and thermal resistance of 20 ℃/cm

$^2$

$\cdot$ kW.

DownLoad: Full-Size Img PowerPoint

Table 1. Major device parameters.

DownLoad: CSV

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Mengxuan Jiang, Z. John Shen, Jun Wang, Xin Yin, Zhikang Shuai, Jiang Lu. A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact[J]. Journal of Semiconductors, 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011

M X Jiang, Z. John Shen, J Wang, X Yin, Z K Shuai, J Lu. A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact[J]. J. Semicond., 2016, 37(2): 024011. doi: 10.1088/1674-4926/37/2/024011.

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Received: 09 November 2015 Revised: Online: Published: 01 February 2016

This letter proposes a high-conductivity insulated gate bipolar transistor (HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT (FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.

A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

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