J. Semicond. > 2016, Volume 37 > Issue 5 > 054008
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SEMICONDUCTOR DEVICES

Novel trench gate field stop IGBT with trench shorted anode

Xudong Chen1, , Jianbing Cheng1, 2, Guobing Teng1 and Houdong Guo1

+ Author Affiliations

 Corresponding author: Corresponding author. Email: xdcnjupt@163.com

DOI: 10.1088/1674-4926/37/5/054008

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Abstract: A novel trench field stop (FS) insulated gate bipolar transistor (IGBT) with a trench shorted anode (TSA) is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop.

Key words: FS-IGBT, trench shorted anode, breakdown voltage, turn off loss, tradeoff



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Fig. 1.  Schematic cross-section of (a) the proposed TSA-FS-IGBT and (b) conventional FS-IGBT.

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Fig. 2.  Blocking characteristics of different structures. $T_{2}$ $=$ 0.7 $\mu$m, $L_{2}$ $=$ 2 $\mu$m and $T_{1}$ $=$ 5 $\mu$m for the TSA-FS-IGBT.

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Fig. 3.  (a) Lateral electric field along BB' and (b) vertical electric field along AA' of TSA-FS-IGBT (T1 = 0.7 μm, L2 = 2 μm and T1 = 5 μm) and conventional FS-IGBT.

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Fig. 4.  \caption{$I$-$V$ characteristics of the TSA-FS-IGBT by varying $T_{2}\, (L_{2}$ $=$ 3 $\mu$m and $T_{1}$ $=$ 5 $\mu$m) and conventional FS-IGBT.

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Fig. 5.  Current flow lines of different structure in conduction mode. (a) Conventional FS-IGBT and (b) proposed with $T_{1}$ $=$ 5 $\mu$m, $T_{2}$ $=$ 0.9 $\mu$m and $L_{2}$ $=$ 3 $\mu$m.

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Fig. 6.  Turn off times of the TSA-FS-IGBT ($L_{1}$ $=$ 3.5 $\mu$m, and $T_{1}$ $=$ 5 $\mu$m) and the conventional FS-IGBT. The anode doping is 5 × 10$^{18}$ cm$^{-3}$.

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Fig. 7.  Forward drop and turn off loss trade-off curve of different structures by varying P$^{+}$ doping. Simulated current density is 150 A/cm$^{2}$ under resistive load and gate voltage is from 15 to 0 V.

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Table 1.   Device specification.

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    Received: 15 August 2015 Revised: Online: Published: 01 May 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(5): 054008
      Xudong Chen, Jianbing Cheng, Guobing Teng, Houdong Guo. Novel trench gate field stop IGBT with trench shorted anode[J]. Journal of Semiconductors, 2016, 37(5): 054008. doi: 10.1088/1674-4926/37/5/054008 ****X D Chen, J B Cheng, G B Teng, H D Guo. Novel trench gate field stop IGBT with trench shorted anode[J]. J. Semicond., 2016, 37(5): 054008. doi: 10.1088/1674-4926/37/5/054008.
      Citation:
      Xudong Chen, Jianbing Cheng, Guobing Teng, Houdong Guo. Novel trench gate field stop IGBT with trench shorted anode[J]. Journal of Semiconductors, 2016, 37(5): 054008. doi: 10.1088/1674-4926/37/5/054008 ****
      X D Chen, J B Cheng, G B Teng, H D Guo. Novel trench gate field stop IGBT with trench shorted anode[J]. J. Semicond., 2016, 37(5): 054008. doi: 10.1088/1674-4926/37/5/054008.
      shu

      Novel trench gate field stop IGBT with trench shorted anode

      DOI: 10.1088/1674-4926/37/5/054008
      • 1.

        College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

      • 2.

        National Application-Specific Integrated Circuit (ASIC) System Engineering Research Center, Southeast University, Nanjing 210096, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61274080) and the Postdoctoral Science Foundation of China (No. 2013M541585).

      More Information
      • Corresponding author: Corresponding author. Email: xdcnjupt@163.com
      • Received Date: 2015-08-15
      • Accepted Date: 2015-09-25
      • Published Date: 2016-01-25

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