Fig. 1.
XRD patterns obtained from AlN films deposited at a substrate temperature of 600 ℃, nitrogen pressure of 10 Pa and various laser energy densities.
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Biju Zheng, Wen Hu. Cubic AlN thin film formation on quartz substrate by pulse laser deposition[J]. Journal of Semiconductors, 2016, 37(6): 063003. doi: 10.1088/1674-4926/37/6/063003
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B J Zheng, W Hu. Cubic AlN thin film formation on quartz substrate by pulse laser deposition[J]. J. Semicond., 2016, 37(6): 063003. doi: 10.1088/1674-4926/37/6/063003.
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Cubic AlN thin film formation on quartz substrate by pulse laser deposition
DOI: 10.1088/1674-4926/37/6/063003
More Information
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Abstract
Cubic AlN thin films were obtained on quartz substrate by pulse laser deposition in a nitrogen reactive atmosphere. A Nd-YAG laser with a wavelength of 1064 nm was used as the laser source. In order to study the influence of the process parameters on the deposited AlN film, the experiments were performed at various technique parameters of laser energy density from 70 to 260 J/cm2, substrate temperature from room temperature to 800℃ and nitrogen pressure from 0.1 to 50 Pa. X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy were applied to characterize the structure and surface morphology of the deposited AlN films. It was found that the structure of AlN films deposited in a vacuum is rocksalt under the condition of substrate temperature 600-800℃, nitrogen pressure 10-0.1 Pa and a moderate laser energy density (190 J/cm2). The high quality AlN film exhibited good optical property.-
Keywords:
- AlN thin film,
- pulsed laser deposition,
- XPS
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References
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