Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti

Huoxi Xu; Jingping Xu

doi:10.1088/1674-4926/37/6/064006

J. Semicond. > 2016, Volume 37 > Issue 6 > 064006

SEMICONDUCTOR DEVICES

Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La₂O₃ gate dielectric incorporated by N or/and Ti

Huoxi Xu¹ and Jingping Xu^2,

+ Author Affiliations

Corresponding author: Jingping Xu, Email: 799904108@qq.com

DOI: 10.1088/1674-4926/37/6/064006

Abstract: LaON, LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La₂O₃ using the sputtering method to fabricate Ge MOS capacitors, and the electrical properties of the devices are carefully examined. LaON/Ge capacitors exhibit the best interface quality, gate leakage property and device reliability, but a smaller k value (14.9). LaTiO/Ge capacitors exhibit a higher k value (22.7), but a deteriorated interface quality, gate leakage property and device reliability. LaTiON/Ge capacitors exhibit the highest k value (24.6), and a relatively better interface quality (3.1×10¹¹ eV^-1cm^-2), gate leakage property (3.6×10^-3 A/cm² at V_g=1 V+V_fb) and device reliability. Therefore, LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials.

Key words: Ge MOS capacitor, La₂O₃, N or/and Ti incorporation, interface properties, k value

References

[1]	Robertson J, Wallace R M. High-k materials and metal gates for CMOS applications. Mater Sci Eng R, 2015, 88:1
[2]	Oh I K, Kim M K, Lee J S, et al. The effect of La₂O₃-incorporation in HfO₂ dielectrics on Ge substrate by atomic layer deposition. Appl Surf Sci, 2013, 287:349
[3]	Liu Chen, Zhang Yuming, Zhang Yimen, et al. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO₂ films in p-GaAs metal-oxide-semiconductor capacitors. Journal of Semiconductors, 2015, 36:124003
[4]	Bethge O, Henkel C, Abermann S, et al. Stability of La₂O₃ and GeO₂ passivated Ge surfaces during ALD of ZrO₂ high-k dielectric. Appl Surf Sci, 2012, 258:3444
[5]	Bom N M, Soares G V, Krug C, et al. Evolution of the Al₂O₃/Ge (100) interface for reactively sputter-deposited films submitted to postdeposition anneals. Appl Surf Sci, 2012, 258:5707
[6]	Zhou Jiahui, Chang Hudong, Liu Honggang, et al. MIM capacitors with various Al₂O₃ thicknesses for GaAs RFIC application. Journal of Semiconductors, 2015, 36:054004
[7]	Xie Q, Deduytsche D, Schaekers M, et al. Implementing TiO₂ as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO₂/GeO₂ interlayer. Appl Phys Lett, 2010, 97:112905
[8]	Fu C H, Chang-Liao K S, Liu L J, et al. An ultralow EOT Ge MOS device with tetragonal HfO₂ and high quality Hf_xGe_yO interfacial layer. IEEE Trans Electron Devices, 2014, 61:2662
[9]	Sun Q Q, Shi Y, Dong L, et al. Impact of germanium related defects on electrical performance of hafnium oxide. Appl Phys Lett, 2008, 92:102908
[10]	Mirovic I Z, Althobaiti M, Weerakkody A, et al. Ge interface engineering using ultra-thin La₂O₃ and Y₂O₃ films:a study into the effect of deposition temperature. J Appl Phys, 2014, 115:114102
[11]	Lamagna L, Wiemer C, Perego M, et al. O₃-based atomic layer deposition of hexagonal La₂O₃ films on Si (100) and Ge (100) substrates. J Appl Phys, 2010, 108:084108
[12]	Galata S F, Mavrou G, Tsipas P, et al. Metal-oxide-semiconductor devices on p-type Ge with La₂O₃ and ZrO₂/La₂O₃ as gate dielectric and the effect of postmetallization anneal. J Vac Sci Technol B, 2009, 27:246
[13]	Xu H X, Xu J P, Li C X, et al. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-k LaTiON gate dielectric. Appl Phys A, 2010, 99:903
[14]	Cheng C L, Horng J H, Wu Y Z. Electrical and reliability characteristics of HfLaTiO-gated metal-oxide-semiconductor capacitors with various Ti concentrations. Device Mater Reliab, 2012, 12:399
[15]	Li C X, Zou X, Lai P T, et al. Effects of Ti content and wet-N₂ anneal on Ge MOS capacitors with HfTiO gate dielectric. Microelectron Reliab, 2008, 48:526
[16]	He G, Sun Z Q, Liu M, et al. Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor. Appl Phys Lett, 2010, 97:192902
[17]	Kawada N, Ito M, Saito Y. Thermal stability of lanthanum oxynitride ultrathin films deposited on silicon substrates. Jpn J Appl Phys, 2006, 45:9197
[18]	He G, Liu J W, Chen H S, et al. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation. J Mater Chem C, 2014, 2:5299
[19]	Terman L M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid State Electron, 1962, 5:285
[20]	Ji F, Xu J P, Lai P T, et al. Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer. Electron Device Lett, 2011, 32:122

Fig. 1. TEM pictures of (a) La₂O₃/Ge MOS, (b) LaON/Ge MOS and (c) LaTiON/Ge MOS.

DownLoad: Full-Size Img PowerPoint

Fig. 2. High-frequency (1-MHz) C-V curves for the LO, LON, LTO and LTON samples.

DownLoad: Full-Size Img PowerPoint

Fig. 3. Gate-leakage current density versus gate voltage for the LO, LON, LTO and LTON samples.

DownLoad: Full-Size Img PowerPoint

Fig. 4. Flat-band voltage shift (△V_fb) and gate leakage current density increase (△J_g) at V_g=V_fb + 1V for the LO, LON, LTO and LTON samples after a high-field stress (at 10 MV/cm for 3600 s).

DownLoad: Full-Size Img PowerPoint

Table 1. Parameters of the Ge MOS capacitors extracted from HF (1-MHz) C-V curves, and t_ox is the physical thickness of gate dielectric measured by ellipsometry.

Sample	t_ox (nm)	C_ox (pF)	CET (nm)	V_fb (V)	Q_ox (cm^-2)	D_it (eV^-1cm^-2)	k
LO	7.51	108	2.5	0.23	-1.03×10¹²	3.3×10¹¹	11.7
LON	8.05	129	2.1	0.19	-8.5×10¹¹	1.2×10¹¹	14.9
LTO	7.54	209	1.3	0.47	-6.15×10¹²	7.1×10¹¹	22.7
LTON	7.55	227	1.2	0.34	-4.3×10¹²	3.1×10¹¹	24.6

DownLoad: CSV

[1]	Robertson J, Wallace R M. High-k materials and metal gates for CMOS applications. Mater Sci Eng R, 2015, 88:1
[2]	Oh I K, Kim M K, Lee J S, et al. The effect of La₂O₃-incorporation in HfO₂ dielectrics on Ge substrate by atomic layer deposition. Appl Surf Sci, 2013, 287:349
[3]	Liu Chen, Zhang Yuming, Zhang Yimen, et al. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO₂ films in p-GaAs metal-oxide-semiconductor capacitors. Journal of Semiconductors, 2015, 36:124003
[4]	Bethge O, Henkel C, Abermann S, et al. Stability of La₂O₃ and GeO₂ passivated Ge surfaces during ALD of ZrO₂ high-k dielectric. Appl Surf Sci, 2012, 258:3444
[5]	Bom N M, Soares G V, Krug C, et al. Evolution of the Al₂O₃/Ge (100) interface for reactively sputter-deposited films submitted to postdeposition anneals. Appl Surf Sci, 2012, 258:5707
[6]	Zhou Jiahui, Chang Hudong, Liu Honggang, et al. MIM capacitors with various Al₂O₃ thicknesses for GaAs RFIC application. Journal of Semiconductors, 2015, 36:054004
[7]	Xie Q, Deduytsche D, Schaekers M, et al. Implementing TiO₂ as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO₂/GeO₂ interlayer. Appl Phys Lett, 2010, 97:112905
[8]	Fu C H, Chang-Liao K S, Liu L J, et al. An ultralow EOT Ge MOS device with tetragonal HfO₂ and high quality Hf_xGe_yO interfacial layer. IEEE Trans Electron Devices, 2014, 61:2662
[9]	Sun Q Q, Shi Y, Dong L, et al. Impact of germanium related defects on electrical performance of hafnium oxide. Appl Phys Lett, 2008, 92:102908
[10]	Mirovic I Z, Althobaiti M, Weerakkody A, et al. Ge interface engineering using ultra-thin La₂O₃ and Y₂O₃ films:a study into the effect of deposition temperature. J Appl Phys, 2014, 115:114102
[11]	Lamagna L, Wiemer C, Perego M, et al. O₃-based atomic layer deposition of hexagonal La₂O₃ films on Si (100) and Ge (100) substrates. J Appl Phys, 2010, 108:084108
[12]	Galata S F, Mavrou G, Tsipas P, et al. Metal-oxide-semiconductor devices on p-type Ge with La₂O₃ and ZrO₂/La₂O₃ as gate dielectric and the effect of postmetallization anneal. J Vac Sci Technol B, 2009, 27:246
[13]	Xu H X, Xu J P, Li C X, et al. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-k LaTiON gate dielectric. Appl Phys A, 2010, 99:903
[14]	Cheng C L, Horng J H, Wu Y Z. Electrical and reliability characteristics of HfLaTiO-gated metal-oxide-semiconductor capacitors with various Ti concentrations. Device Mater Reliab, 2012, 12:399
[15]	Li C X, Zou X, Lai P T, et al. Effects of Ti content and wet-N₂ anneal on Ge MOS capacitors with HfTiO gate dielectric. Microelectron Reliab, 2008, 48:526
[16]	He G, Sun Z Q, Liu M, et al. Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor. Appl Phys Lett, 2010, 97:192902
[17]	Kawada N, Ito M, Saito Y. Thermal stability of lanthanum oxynitride ultrathin films deposited on silicon substrates. Jpn J Appl Phys, 2006, 45:9197
[18]	He G, Liu J W, Chen H S, et al. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation. J Mater Chem C, 2014, 2:5299
[19]	Terman L M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid State Electron, 1962, 5:285
[20]	Ji F, Xu J P, Lai P T, et al. Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer. Electron Device Lett, 2011, 32:122

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Received: 23 November 2015 Revised: 23 February 2016 Online: Published: 01 June 2016

Article Navigation > Journal of Semiconductors > 2016 > 37(6): 064006

Huoxi Xu, Jingping Xu. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti[J]. Journal of Semiconductors, 2016, 37(6): 064006. doi: 10.1088/1674-4926/37/6/064006 ****H X Xu, J P Xu. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti[J]. J. Semicond., 2016, 37(6): 064006. doi: 10.1088/1674-4926/37/6/064006.

Citation:

Huoxi Xu, Jingping Xu. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La₂O₃ gate dielectric incorporated by N or/and Ti[J]. Journal of Semiconductors, 2016, 37(6): 064006. doi: 10.1088/1674-4926/37/6/064006 ****

H X Xu, J P Xu. Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti[J]. J. Semicond., 2016, 37(6): 064006. doi: 10.1088/1674-4926/37/6/064006.

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Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La₂O₃ gate dielectric incorporated by N or/and Ti

DOI: 10.1088/1674-4926/37/6/064006

Huoxi Xu¹,
Jingping Xu^2,

1.
Department of Electronic Information, Huanggang Normal University, Huangzhong 438000, China
2.
School of Optical & Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Funds:

the National Natural Science Foundation of China No. 61274112

the Scientific Research Program of Huanggang Normal University No. 2012028803

the Natural Science Foundation of Hubei Province No. 2011CDB165

Project supported by the National Natural Science Foundation of China (No. 61274112), the Natural Science Foundation of Hubei Province (No. 2011CDB165), and the Scientific Research Program of Huanggang Normal University (No. 2012028803).

More Information

Corresponding author: Email: 799904108@qq.com
Received Date: 2015-11-23
Revised Date: 2016-02-23
Published Date: 2016-06-01

Abstract

Abstract

LaON, LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La₂O₃ using the sputtering method to fabricate Ge MOS capacitors, and the electrical properties of the devices are carefully examined. LaON/Ge capacitors exhibit the best interface quality, gate leakage property and device reliability, but a smaller k value (14.9). LaTiO/Ge capacitors exhibit a higher k value (22.7), but a deteriorated interface quality, gate leakage property and device reliability. LaTiON/Ge capacitors exhibit the highest k value (24.6), and a relatively better interface quality (3.1×10¹¹ eV^-1cm^-2), gate leakage property (3.6×10^-3 A/cm² at V_g=1 V+V_fb) and device reliability. Therefore, LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials.
- Ge MOS capacitor,
- La₂O₃,
- N or/and Ti incorporation,
- interface properties,
- k value

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References(20)

References

[1]	Robertson J, Wallace R M. High-k materials and metal gates for CMOS applications. Mater Sci Eng R, 2015, 88:1
[2]	Oh I K, Kim M K, Lee J S, et al. The effect of La₂O₃-incorporation in HfO₂ dielectrics on Ge substrate by atomic layer deposition. Appl Surf Sci, 2013, 287:349
[3]	Liu Chen, Zhang Yuming, Zhang Yimen, et al. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO₂ films in p-GaAs metal-oxide-semiconductor capacitors. Journal of Semiconductors, 2015, 36:124003
[4]	Bethge O, Henkel C, Abermann S, et al. Stability of La₂O₃ and GeO₂ passivated Ge surfaces during ALD of ZrO₂ high-k dielectric. Appl Surf Sci, 2012, 258:3444
[5]	Bom N M, Soares G V, Krug C, et al. Evolution of the Al₂O₃/Ge (100) interface for reactively sputter-deposited films submitted to postdeposition anneals. Appl Surf Sci, 2012, 258:5707
[6]	Zhou Jiahui, Chang Hudong, Liu Honggang, et al. MIM capacitors with various Al₂O₃ thicknesses for GaAs RFIC application. Journal of Semiconductors, 2015, 36:054004
[7]	Xie Q, Deduytsche D, Schaekers M, et al. Implementing TiO₂ as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO₂/GeO₂ interlayer. Appl Phys Lett, 2010, 97:112905
[8]	Fu C H, Chang-Liao K S, Liu L J, et al. An ultralow EOT Ge MOS device with tetragonal HfO₂ and high quality Hf_xGe_yO interfacial layer. IEEE Trans Electron Devices, 2014, 61:2662
[9]	Sun Q Q, Shi Y, Dong L, et al. Impact of germanium related defects on electrical performance of hafnium oxide. Appl Phys Lett, 2008, 92:102908
[10]	Mirovic I Z, Althobaiti M, Weerakkody A, et al. Ge interface engineering using ultra-thin La₂O₃ and Y₂O₃ films:a study into the effect of deposition temperature. J Appl Phys, 2014, 115:114102
[11]	Lamagna L, Wiemer C, Perego M, et al. O₃-based atomic layer deposition of hexagonal La₂O₃ films on Si (100) and Ge (100) substrates. J Appl Phys, 2010, 108:084108
[12]	Galata S F, Mavrou G, Tsipas P, et al. Metal-oxide-semiconductor devices on p-type Ge with La₂O₃ and ZrO₂/La₂O₃ as gate dielectric and the effect of postmetallization anneal. J Vac Sci Technol B, 2009, 27:246
[13]	Xu H X, Xu J P, Li C X, et al. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-k LaTiON gate dielectric. Appl Phys A, 2010, 99:903
[14]	Cheng C L, Horng J H, Wu Y Z. Electrical and reliability characteristics of HfLaTiO-gated metal-oxide-semiconductor capacitors with various Ti concentrations. Device Mater Reliab, 2012, 12:399
[15]	Li C X, Zou X, Lai P T, et al. Effects of Ti content and wet-N₂ anneal on Ge MOS capacitors with HfTiO gate dielectric. Microelectron Reliab, 2008, 48:526
[16]	He G, Sun Z Q, Liu M, et al. Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor. Appl Phys Lett, 2010, 97:192902
[17]	Kawada N, Ito M, Saito Y. Thermal stability of lanthanum oxynitride ultrathin films deposited on silicon substrates. Jpn J Appl Phys, 2006, 45:9197
[18]	He G, Liu J W, Chen H S, et al. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation. J Mater Chem C, 2014, 2:5299
[19]	Terman L M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid State Electron, 1962, 5:285
[20]	Ji F, Xu J P, Lai P T, et al. Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer. Electron Device Lett, 2011, 32:122

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Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La₂O₃ gate dielectric incorporated by N or/and Ti

Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La₂O₃ gate dielectric incorporated by N or/and Ti