p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

Wensheng Wei; Chunxi Zhang

doi:10.1088/1674-4926/37/6/064007

J. Semicond. > 2016, Volume 37 > Issue 6 > 064007

SEMICONDUCTOR DEVICES

p⁺-n^--n⁺-type power diode with crystalline/nanocrystalline Si mosaic electrodes

Wensheng Wei^1, and Chunxi Zhang²

+ Author Affiliations

Corresponding author: Wensheng Wei, Email: weiwensheng287@163.com

DOI: 10.1088/1674-4926/37/6/064007

Abstract: Using p⁺-type crystalline Si with n⁺-type nanocrystalline Si (nc-Si) and n⁺-type crystalline Si with p⁺-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p⁺-n^--n⁺-type Si diode was fabricated by epitaxially growing p⁺- and n⁺-type layers on two sides of a lightly doped n^--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p⁺-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n⁺-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n^-)Si/(p⁺)nc-Si and (n^-)Si/(n⁺)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one.

Key words: Si power diode, nanocrystalline Si, mosaic electrode, reverse recovery

References

[1]	Amemiya Y, Suget T, Mizushima Y. Novel low loss and high speed diode utilizing an "ideal" ohmic contact. IEEE Trans Electron Devices, 1982, 29(2):236
[2]	Jayant B B. Analysis of a high voltage merged p-i-n/Schottky (MPS) rectifier. IEEE Electron Device Lett, 1987, EDL-8(9):407
[3]	Wang Ying, Yu Chenghao, Miao Zhikun, et al. Low leakage 4H-SiC junction barrier Schottky rectifier with sandwich p type well. IET Power Electron, 2015, 8(5):672
[4]	Ma Li, Gao Yong. A novel SiGe/Si heterojunction power diode utilizing an ideal ohmic contact. The Fourth International Workshop on Junction Technology (IWJT' 2004), 2004:263
[5]	Murray A F J, Kelleher A, Lane W A. On the use of a p⁺/n⁺ mosaic contact for fast switching diode applications. The Sixth International Conference on Power Electronics and Variable Speed Drives, Nottingham, UK, 1996:247
[6]	Aldrete V H E, Santana J, del Valle J L. Stored charge control of p-i-n diodes:a simulation approach. Fourth IEEE International Caracas Conference on Devices, Circuits and Systems, Oranjestad, Aruba, Dutch Caribbean, 2002:D021-1-8
[7]	Aldrete V H E, del Valle J L, Santana C J. A TCAD comparative study of power rectifiers-modified p-i-n vs. modified mosaic contact p-i-n diode. Microelectron Reliab, 2003, 43(1):181
[8]	Wu He, Wu Yu, Kang Baowei, et al. Simulation of power fast recovery diodes using local lifetime controlling technique. Chinese Journal of Semiconductors, 2003, 24(5):520
[9]	Humbel O, Galster N, Dalibor T, et al. Why is plasma engineering in fast recovery diodes by ion irradiation superior to emitter efficiency reduction. IEEE Trans Power Electron, 2003, 18(1):23
[10]	Wei Wensheng. Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si. Solid State Sciences, 2010, 12(5):789
[11]	Chen X Y, Shen W Z. Observation of low-dimensional state tunneling in nanocrystalline silicon/crystalline silicon heterostructures. Appl Phys Lett, 2004, 85(5):287
[12]	Wei Wensheng, Zhao Ningning, Wang Tianmin. Conduction behavior of hydrogenated nanocrystalline silicon backward diode. Nanotechnology, 2006, 18(12):025203
[13]	Wei Wensheng, Wang Tianmin, Zhang Chunxi, et al. Variable capacitance diodes of (p)nc-Si:H/(n)c-Si heterojunction. Chinese Journal of Semiconductors, 2005, 26(4):745
[14]	Wei Wensheng, Yan Xunlei. Structural characterization of boron doped hydrogenated nanocrystalline silicon films. Vacuum, 2009, 83(5):787
[15]	Wei Wensheng, Luo Fei, Zhang Chunxi, et al. Detection of reverse recovery characteristics of power diodes. IET Power Electronics, 2016, 9(3):476
[16]	Arpatzanis N, Tassis D, Dimitriadis C A, et al. Experimental investigation of noise in 4H-SiC p⁺-n-n⁺ junctions. Semicond Sci Technol, 2006, 21(3):591
[17]	Domeij M, Lutz J, Silber D. On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. IEEE Trans Electron Devices, 2003, 50(2):486
[18]	Pendharkar S P, Trivedi M, Shenai K. Dynamics of reverse recovery of high power p-i-n diodes. IEEE Trans Electron Devices, 1996, 43(1):142

Fig. 1. Schematics of the prepared diodes. (a) Without mosaic electrode. (b) With mosaic anode only. (c) With mosaic anode and cathode. E_BI1, E_BI2, E_BI1′ and E_BI2′ are the built-in electrical field in (n^-)Si/(p⁺)/Si, (n^-)Si/(n⁺)Si, (n^-)Si/(n⁺)nc-Si and (n^-)Si/(p⁺)nc-Si junctions, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 2. Structural characterization for the fabricated films. (a) High resolution transmission electron microscopy (HRTEM) photo of the boron-doped specimen. (b) HRTEM image of the phosphorus-doped film. (c) X-ray diffraction patterns of the two types of samples.

DownLoad: Full-Size Img PowerPoint

Fig. 3. Relationship between capacitance C and applied voltage V of (n^-)Si/(p⁺)nc-Si and (n^-)Si/(n⁺)nc-Si junctions. The dots are experimental data while the lines are the fitting ones according to the data.

DownLoad: Full-Size Img PowerPoint

Fig. 4. Relationship between capacitance C and applied voltage V of (n^-)Si/(p⁺)nc-Si and (n^-)Si/(n⁺)nc-Si junctions. The dots are experimental data while the lines are the fitting ones according to the data.

DownLoad: Full-Size Img PowerPoint

Fig. 5. Waveforms of reverse recovery current I_rr and voltage V_rr. (a) For the operating component without mosaic structure. (b) For the performing device with mosaic anode only. (c) For the running diode with mosaic anode and cathode.

DownLoad: Full-Size Img PowerPoint

Table 1. Hall effect experimental results for the van der Pauw-type doped nanocrystalline Si films.

Dopant in SiH₄	Doping ratio(vol%)	Film thickness(cm)	Hall coefficient	Conductivity(Ω^-1cm^-1)	Hall mobility(cm²/(V⋅s))	Carrier concentration(cm^-3)
B₂H₆	3	2.0×10^-4	4.8017	2.4991	12	1.3×10¹⁸
PH₃	3	2.0×10^-4	0.5675	68.7258	39	1.1×10¹⁹

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[1]	Amemiya Y, Suget T, Mizushima Y. Novel low loss and high speed diode utilizing an "ideal" ohmic contact. IEEE Trans Electron Devices, 1982, 29(2):236
[2]	Jayant B B. Analysis of a high voltage merged p-i-n/Schottky (MPS) rectifier. IEEE Electron Device Lett, 1987, EDL-8(9):407
[3]	Wang Ying, Yu Chenghao, Miao Zhikun, et al. Low leakage 4H-SiC junction barrier Schottky rectifier with sandwich p type well. IET Power Electron, 2015, 8(5):672
[4]	Ma Li, Gao Yong. A novel SiGe/Si heterojunction power diode utilizing an ideal ohmic contact. The Fourth International Workshop on Junction Technology (IWJT' 2004), 2004:263
[5]	Murray A F J, Kelleher A, Lane W A. On the use of a p⁺/n⁺ mosaic contact for fast switching diode applications. The Sixth International Conference on Power Electronics and Variable Speed Drives, Nottingham, UK, 1996:247
[6]	Aldrete V H E, Santana J, del Valle J L. Stored charge control of p-i-n diodes:a simulation approach. Fourth IEEE International Caracas Conference on Devices, Circuits and Systems, Oranjestad, Aruba, Dutch Caribbean, 2002:D021-1-8
[7]	Aldrete V H E, del Valle J L, Santana C J. A TCAD comparative study of power rectifiers-modified p-i-n vs. modified mosaic contact p-i-n diode. Microelectron Reliab, 2003, 43(1):181
[8]	Wu He, Wu Yu, Kang Baowei, et al. Simulation of power fast recovery diodes using local lifetime controlling technique. Chinese Journal of Semiconductors, 2003, 24(5):520
[9]	Humbel O, Galster N, Dalibor T, et al. Why is plasma engineering in fast recovery diodes by ion irradiation superior to emitter efficiency reduction. IEEE Trans Power Electron, 2003, 18(1):23
[10]	Wei Wensheng. Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si. Solid State Sciences, 2010, 12(5):789
[11]	Chen X Y, Shen W Z. Observation of low-dimensional state tunneling in nanocrystalline silicon/crystalline silicon heterostructures. Appl Phys Lett, 2004, 85(5):287
[12]	Wei Wensheng, Zhao Ningning, Wang Tianmin. Conduction behavior of hydrogenated nanocrystalline silicon backward diode. Nanotechnology, 2006, 18(12):025203
[13]	Wei Wensheng, Wang Tianmin, Zhang Chunxi, et al. Variable capacitance diodes of (p)nc-Si:H/(n)c-Si heterojunction. Chinese Journal of Semiconductors, 2005, 26(4):745
[14]	Wei Wensheng, Yan Xunlei. Structural characterization of boron doped hydrogenated nanocrystalline silicon films. Vacuum, 2009, 83(5):787
[15]	Wei Wensheng, Luo Fei, Zhang Chunxi, et al. Detection of reverse recovery characteristics of power diodes. IET Power Electronics, 2016, 9(3):476
[16]	Arpatzanis N, Tassis D, Dimitriadis C A, et al. Experimental investigation of noise in 4H-SiC p⁺-n-n⁺ junctions. Semicond Sci Technol, 2006, 21(3):591
[17]	Domeij M, Lutz J, Silber D. On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. IEEE Trans Electron Devices, 2003, 50(2):486
[18]	Pendharkar S P, Trivedi M, Shenai K. Dynamics of reverse recovery of high power p-i-n diodes. IEEE Trans Electron Devices, 1996, 43(1):142

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Received: 09 October 2015 Revised: 23 November 2015 Online: Published: 01 June 2016

Article Navigation > Journal of Semiconductors > 2016 > 37(6): 064007

Wensheng Wei, Chunxi Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. Journal of Semiconductors, 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007 ****W S Wei, C X Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. J. Semicond., 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007.

Citation:

Wensheng Wei, Chunxi Zhang. p⁺-n^--n⁺-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. Journal of Semiconductors, 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007 ****

W S Wei, C X Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. J. Semicond., 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007.

Citation:

W S Wei, C X Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. J. Semicond., 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007.

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p⁺-n^--n⁺-type power diode with crystalline/nanocrystalline Si mosaic electrodes

DOI: 10.1088/1674-4926/37/6/064007

Wensheng Wei^1,,
Chunxi Zhang²

1.
College of Physics & Electronic Information Engineering, Wenzhou University, Wenzhou 325035, China
2.
School of Instrumentation Science and Opto-Electronics Engineering, Beihang University, Beijing 100191, China

Funds:

the National Natural Science Foundation of China (No. 61274006)

the National Natural Science Foundation of China No. 61274006

More Information

Corresponding author: Email: weiwensheng287@163.com
Received Date: 2015-10-09
Revised Date: 2015-11-23
Published Date: 2016-06-01

Abstract

Abstract

Using p⁺-type crystalline Si with n⁺-type nanocrystalline Si (nc-Si) and n⁺-type crystalline Si with p⁺-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p⁺-n^--n⁺-type Si diode was fabricated by epitaxially growing p⁺- and n⁺-type layers on two sides of a lightly doped n^--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p⁺-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n⁺-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n^-)Si/(p⁺)nc-Si and (n^-)Si/(n⁺)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one.
- Si power diode,
- nanocrystalline Si,
- mosaic electrode,
- reverse recovery

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References(18)

References

[1]	Amemiya Y, Suget T, Mizushima Y. Novel low loss and high speed diode utilizing an "ideal" ohmic contact. IEEE Trans Electron Devices, 1982, 29(2):236
[2]	Jayant B B. Analysis of a high voltage merged p-i-n/Schottky (MPS) rectifier. IEEE Electron Device Lett, 1987, EDL-8(9):407
[3]	Wang Ying, Yu Chenghao, Miao Zhikun, et al. Low leakage 4H-SiC junction barrier Schottky rectifier with sandwich p type well. IET Power Electron, 2015, 8(5):672
[4]	Ma Li, Gao Yong. A novel SiGe/Si heterojunction power diode utilizing an ideal ohmic contact. The Fourth International Workshop on Junction Technology (IWJT' 2004), 2004:263
[5]	Murray A F J, Kelleher A, Lane W A. On the use of a p⁺/n⁺ mosaic contact for fast switching diode applications. The Sixth International Conference on Power Electronics and Variable Speed Drives, Nottingham, UK, 1996:247
[6]	Aldrete V H E, Santana J, del Valle J L. Stored charge control of p-i-n diodes:a simulation approach. Fourth IEEE International Caracas Conference on Devices, Circuits and Systems, Oranjestad, Aruba, Dutch Caribbean, 2002:D021-1-8
[7]	Aldrete V H E, del Valle J L, Santana C J. A TCAD comparative study of power rectifiers-modified p-i-n vs. modified mosaic contact p-i-n diode. Microelectron Reliab, 2003, 43(1):181
[8]	Wu He, Wu Yu, Kang Baowei, et al. Simulation of power fast recovery diodes using local lifetime controlling technique. Chinese Journal of Semiconductors, 2003, 24(5):520
[9]	Humbel O, Galster N, Dalibor T, et al. Why is plasma engineering in fast recovery diodes by ion irradiation superior to emitter efficiency reduction. IEEE Trans Power Electron, 2003, 18(1):23
[10]	Wei Wensheng. Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si. Solid State Sciences, 2010, 12(5):789
[11]	Chen X Y, Shen W Z. Observation of low-dimensional state tunneling in nanocrystalline silicon/crystalline silicon heterostructures. Appl Phys Lett, 2004, 85(5):287
[12]	Wei Wensheng, Zhao Ningning, Wang Tianmin. Conduction behavior of hydrogenated nanocrystalline silicon backward diode. Nanotechnology, 2006, 18(12):025203
[13]	Wei Wensheng, Wang Tianmin, Zhang Chunxi, et al. Variable capacitance diodes of (p)nc-Si:H/(n)c-Si heterojunction. Chinese Journal of Semiconductors, 2005, 26(4):745
[14]	Wei Wensheng, Yan Xunlei. Structural characterization of boron doped hydrogenated nanocrystalline silicon films. Vacuum, 2009, 83(5):787
[15]	Wei Wensheng, Luo Fei, Zhang Chunxi, et al. Detection of reverse recovery characteristics of power diodes. IET Power Electronics, 2016, 9(3):476
[16]	Arpatzanis N, Tassis D, Dimitriadis C A, et al. Experimental investigation of noise in 4H-SiC p⁺-n-n⁺ junctions. Semicond Sci Technol, 2006, 21(3):591
[17]	Domeij M, Lutz J, Silber D. On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. IEEE Trans Electron Devices, 2003, 50(2):486
[18]	Pendharkar S P, Trivedi M, Shenai K. Dynamics of reverse recovery of high power p-i-n diodes. IEEE Trans Electron Devices, 1996, 43(1):142

p⁺-n^--n⁺-type power diode with crystalline/nanocrystalline Si mosaic electrodes

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p⁺-n^--n⁺-type power diode with crystalline/nanocrystalline Si mosaic electrodes

p⁺-n^--n⁺-type power diode with crystalline/nanocrystalline Si mosaic electrodes