Citation: |
Wensheng Wei, Chunxi Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. Journal of Semiconductors, 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007
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W S Wei, C X Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. J. Semicond., 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007.
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p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes
DOI: 10.1088/1674-4926/37/6/064007
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Abstract
Using p+-type crystalline Si with n+-type nanocrystalline Si (nc-Si) and n+-type crystalline Si with p+-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p+-n--n+-type Si diode was fabricated by epitaxially growing p+- and n+-type layers on two sides of a lightly doped n--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p+-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n+-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one.-
Keywords:
- Si power diode,
- nanocrystalline Si,
- mosaic electrode,
- reverse recovery
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References
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