Citation: |
Pongthavornkamol Tiwat, Guoguo Liu, Tingting Yuan, Yingkui Zheng, Xinyu Liu. Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers[J]. Journal of Semiconductors, 2016, 37(6): 064008. doi: 10.1088/1674-4926/37/6/064008
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P Tiwat, G G Liu, T T Yuan, Y K Zheng, X Y Liu. Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers[J]. J. Semicond., 2016, 37(6): 064008. doi: 10.1088/1674-4926/37/6/064008.
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Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers
DOI: 10.1088/1674-4926/37/6/064008
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Abstract
This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors (HEMTs) at different numbers of gate fingers. Scalable small-signal models are extracted to analyze the relationship between each model's parameters and the number of device's gate fingers. The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz. The dependency between the number of device's gate fingers and load-pull characterization is presented. -
References
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