Fig. 1.
(Color online) (a) Schematic plot and (b) microscopic image of the studied LDD-HEMTs. (c) Region distributions of HEMTs with different F- plasma treatment process in one wafer.
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| Citation: |
Chong Wang, Xiaoxiao Wei, Yunlong He, Xuefeng Zheng, Xiaohua Ma, Jincheng Zhang, Yue Hao. Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2016, 37(6): 064009. doi: 10.1088/1674-4926/37/6/064009
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C Wang, X X Wei, Y L He, X F Zheng, X H Ma, J C Zhang, Y Hao. Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT[J]. J. Semicond., 2016, 37(6): 064009. doi: 10.1088/1674-4926/37/6/064009.
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Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT
DOI: 10.1088/1674-4926/37/6/064009
More Information
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Abstract
Low-density drain high-electron mobility transistors (LDD-HEMTs) with different F- plasma treatment were investigated by simulations and experiments. The LDD region was performed by introducing negatively charged fluorine ions, which modified the surface field distribution on the drain side of the HEMT, and the enhancement of breakdown voltage were achieved. With the increased fluorine plasma treatment power and LDD region length, the breakdown voltage can be maximumly improved by 70%, and no severe reductions on output current and transconductance were observed. To confirm the temperature stability of the devices, annealing experiments were carried out at 400℃ for 2 min in ambient N2. Moreover, the gate leakage current and breakdown voltage before and after annealing were compared and analyzed, respectively.-
Keywords:
- AlGaN/GaN,
- HEMT,
- LDD,
- fluorine plasma treatment
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References
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