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(Color online) Cross-section of the metal-to-metal antifuses. Both of the devices have 120 Å HfO2 as insulator grown by ALD. (a) With embedded 100 Å Ti layer and 200 Å TiN. (b) Without embedded Ti layer, but with 300 Å TiN.
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| Citation: |
Yang Jiang, Min Tian, Huang Long, Jie Zhao, Shuai Chen, Huicai Zhong. Metal-to-metal antifuse with low programming voltage and low on-state resistance[J]. Journal of Semiconductors, 2016, 37(7): 074008. doi: 10.1088/1674-4926/37/7/074008
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Y Jiang, M Tian, H Long, J Zhao, S Chen, H C Zhong. Metal-to-metal antifuse with low programming voltage and low on-state resistance[J]. J. Semicond., 2016, 37(7): 074008. doi: 10.1088/1674-4926/37/7/074008.
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Metal-to-metal antifuse with low programming voltage and low on-state resistance
DOI: 10.1088/1674-4926/37/7/074008
More Information
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Abstract
This paper describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the Al-HfO2-Al antifuse. The programming voltage of the antifuse with 120 Å HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance (~19 Ω) and low programming voltage (4.6 V) is demonstrated in the embedded Ti antifuse with 120 Å HfO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.-
Keywords:
- antifuse,
- embedded Ti layer,
- lower programming voltage,
- HfO2
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] -
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