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(Color online) (a) Cross section of FBAR stack with aluminum nitride layer sandwiched in between molybdenum layers. (b) SMR stack with high and low impedance layer.
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| Citation: |
Xixi Han, Yi Ou, Zhigang Li, Wen Ou, Dapeng Chen, Tianchun Ye. Simulation and fabrication of thin film bulk acoustic wave resonator[J]. Journal of Semiconductors, 2016, 37(7): 074009. doi: 10.1088/1674-4926/37/7/074009
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X X Han, Y Ou, Z G Li, W Ou, D P Chen, T C Ye. Simulation and fabrication of thin film bulk acoustic wave resonator[J]. J. Semicond., 2016, 37(7): 074009. doi: 10.1088/1674-4926/37/7/074009.
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Simulation and fabrication of thin film bulk acoustic wave resonator
DOI: 10.1088/1674-4926/37/7/074009
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Abstract
In this paper, we present the simulation and fabrication of a thin film bulk acoustic resonator (FBAR). In order to improve the accuracy of simulation, an improved Mason model was introduced to design the resonator by taking the coupling effect between electrode and substrate into consideration. The resonators were fabricated by the eight inch CMOS process, and the measurements show that the improved Mason model is more accurate than a simple Mason model. The Qs (Q at series resonance), Qp (Q at parallel resonance), Qmax and kt2 of the FBAR were measured to be 695, 814, 1049, and 7.01% respectively, showing better performance than previous reports. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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