Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

Qing Wang; Yang Liu; Yongjian Sun; Yuzhen Tong; Guoyi Zhang

doi:10.1088/1674-4926/37/8/083001

J. Semicond. > 2016, Volume 37 > Issue 8 > 083001

SEMICONDUCTOR MATERIALS

Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

Qing Wang¹, Yang Liu^1,, Yongjian Sun^3,, Yuzhen Tong² and Guoyi Zhang²

+ Author Affiliations

Corresponding author: Liu Yang, Email: liuy69@mail.sysu.edu.cn; Sun Yongjian, Email: sunyongjian99999@126.com

DOI: 10.1088/1674-4926/37/8/083001

Abstract: A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.

Key words: gallium nitride, Mo substrate, medium bonding, laser lift off, thermal stability, homogeneous epitaxial

References

[1]	Jia H, Guo L, Wang W, et al. Recent progress in GaN-based light-emitting diodes. Adv Mater, 2009, 21(45): 4641 doi: 10.1002/adma.v21:45
[2]	Xing H L, Dora Y, Chini A, et al. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates. IEEE Electron Device Lett, 2004, 25(4): 161 doi: 10.1109/LED.2004.824845
[3]	Liu L, Edgar J H. Substrates for gallium nitride epitaxy. Materials Science & Engineering R, 2002, 37(3): 61 http://cn.bing.com/academic/profile?id=1974072513&encoded=0&v=paper_preview&mkt=zh-cn
[4]	Cao Junsong, Lü Xin, Zhao Lubing, et al. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE. Journal of Semiconductors, 2015, 36(2): 023005 doi: 10.1088/1674-4926/36/2/023005
[5]	Kong Jing, Feng Meixin, Cai Jin, et al. GaN grown on nano-patterned sapphire substrates. Journal of Semiconductors, 2015, 36(4): 043003 doi: 10.1088/1674-4926/36/4/043003
[6]	Zhao Danmei, Zhao Degang, Jiang Desheng, et al. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon. Journal of Semiconductors, 2015, 36(6): 063003 doi: 10.1088/1674-4926/36/6/063003
[7]	Mao Qinghua, Liu Junlin, Wu Xiaoming, et al. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon. Journal of Semiconductors, 2015, 36(9): 093003 doi: 10.1088/1674-4926/36/9/093003
[8]	Okamoto K, Inoue S, Matsuki N, et al. Epitaxial growth of GaN films grown on single crystal Fe substrates. Appl Phys Lett, 2008, 93(25): 251906 doi: 10.1063/1.3056117
[9]	Freitas J A, Rowland L B, Kim J, et al. Properties of epitaxial GaN on refractory metal substrates. Appl Phys Lett, 2007, 90(9): 091910 doi: 10.1063/1.2709512
[10]	Okamoto K, Inoue S, Nakano T, et al. Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers. J Cryst Growth, 2009, 311(5): 1311 doi: 10.1016/j.jcrysgro.2008.11.097
[11]	Arokiaraj J, Leong C K, Lixian V, et al. Bonding of GaN structures with Si (100) substrates using sequentially deposited NiAu metal layers. Appl Phys Lett, 2008, 92(12): 124105 doi: 10.1063/1.2903149
[12]	Gautier S, Moudakir T, Patriarche G, et al. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire. J Cryst Growth, 2013, 370(5): 63 http://cn.bing.com/academic/profile?id=2141194668&encoded=0&v=paper_preview&mkt=zh-cn
[13]	Floyd P D, Chua C L, Treat D W, et al. Wafer fusion of infrared laser diodes to GaN light-emitting heterostructures. IEEE Photon Tech Lett, 1998, 10(11): 1539 doi: 10.1109/68.726742
[14]	Arokiaraj J, Soh C B, Wang X C, et al. Integration of GaN thin films to SiO₂-Si (100) substrates by laser lift-off and wafer fusion method. Superlattices Microstruct, 2006, 40(4): 219 http://www.doc88.com/p-7824453817978.html
[15]	Chung J W, Lee J K, Piner E L, et al. Seamless on-wafer integration of Si (100) MOSFETs and GaN HEMTs. IEEE Electron Device Lett, 2009, 30(10): 1015 doi: 10.1109/LED.2009.2027914
[16]	Chung J W, Piner E L, Palacios T. N-face GaN/AlGaN HEMTs fabricated through layer transfer technology. IEEE Electron Device Lett, 2009, 30(2): 113 doi: 10.1109/LED.2008.2010415
[17]	Blasing J, Reiher A, Dadgar A, et al. The origin of stress reduction by low-temperature AlN interlayers. Appl Phys Lett, 2002, 81(15): 2722 doi: 10.1063/1.1512331
[18]	Zhang Xiaoying, Ruan Yujiao, Chen Songyan, et al. GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off. Journal of Semiconductors, 2009, 30(12): 123001 doi: 10.1088/1674-4926/30/12/123001
[19]	Zhao D G, Xu S J, Xie M H, et al. Stress and its effect on optical properties of GaN epilayers grown on Si (111), 6H-SiC (0001), and c-plane sapphire. Appl Phys Lett, 2003, 83(4): 677 doi: 10.1063/1.1592306

Fig. 1. (Color online) Schematic diagram of sample (a) after first bonding, (c) after laser-lift-off and (e) after second bonding; image of the 2-inch-diameter sample after it went through (b) first bonding, (d) laser-lift-off and (f) second bonding.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) The thermal expansion coefficient versus temperature curve for GaN and Mo.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) XRD rocking curves of GaN templates on sapphire and Mo substrates and (b) Raman spectrum of GaN on Mo substrate.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Image of GaN template on Mo went through (a) one bonding and direct heat to 830℃, (b) double bonding and direct heat to 830℃, (c) step annealing-600℃, (d) step annealing-680℃, (e) step annealing-780℃and (f) step annealing-830℃.

DownLoad: Full-Size Img PowerPoint

[1]	Jia H, Guo L, Wang W, et al. Recent progress in GaN-based light-emitting diodes. Adv Mater, 2009, 21(45): 4641 doi: 10.1002/adma.v21:45
[2]	Xing H L, Dora Y, Chini A, et al. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates. IEEE Electron Device Lett, 2004, 25(4): 161 doi: 10.1109/LED.2004.824845
[3]	Liu L, Edgar J H. Substrates for gallium nitride epitaxy. Materials Science & Engineering R, 2002, 37(3): 61 http://cn.bing.com/academic/profile?id=1974072513&encoded=0&v=paper_preview&mkt=zh-cn
[4]	Cao Junsong, Lü Xin, Zhao Lubing, et al. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE. Journal of Semiconductors, 2015, 36(2): 023005 doi: 10.1088/1674-4926/36/2/023005
[5]	Kong Jing, Feng Meixin, Cai Jin, et al. GaN grown on nano-patterned sapphire substrates. Journal of Semiconductors, 2015, 36(4): 043003 doi: 10.1088/1674-4926/36/4/043003
[6]	Zhao Danmei, Zhao Degang, Jiang Desheng, et al. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon. Journal of Semiconductors, 2015, 36(6): 063003 doi: 10.1088/1674-4926/36/6/063003
[7]	Mao Qinghua, Liu Junlin, Wu Xiaoming, et al. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon. Journal of Semiconductors, 2015, 36(9): 093003 doi: 10.1088/1674-4926/36/9/093003
[8]	Okamoto K, Inoue S, Matsuki N, et al. Epitaxial growth of GaN films grown on single crystal Fe substrates. Appl Phys Lett, 2008, 93(25): 251906 doi: 10.1063/1.3056117
[9]	Freitas J A, Rowland L B, Kim J, et al. Properties of epitaxial GaN on refractory metal substrates. Appl Phys Lett, 2007, 90(9): 091910 doi: 10.1063/1.2709512
[10]	Okamoto K, Inoue S, Nakano T, et al. Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers. J Cryst Growth, 2009, 311(5): 1311 doi: 10.1016/j.jcrysgro.2008.11.097
[11]	Arokiaraj J, Leong C K, Lixian V, et al. Bonding of GaN structures with Si (100) substrates using sequentially deposited NiAu metal layers. Appl Phys Lett, 2008, 92(12): 124105 doi: 10.1063/1.2903149
[12]	Gautier S, Moudakir T, Patriarche G, et al. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire. J Cryst Growth, 2013, 370(5): 63 http://cn.bing.com/academic/profile?id=2141194668&encoded=0&v=paper_preview&mkt=zh-cn
[13]	Floyd P D, Chua C L, Treat D W, et al. Wafer fusion of infrared laser diodes to GaN light-emitting heterostructures. IEEE Photon Tech Lett, 1998, 10(11): 1539 doi: 10.1109/68.726742
[14]	Arokiaraj J, Soh C B, Wang X C, et al. Integration of GaN thin films to SiO₂-Si (100) substrates by laser lift-off and wafer fusion method. Superlattices Microstruct, 2006, 40(4): 219 http://www.doc88.com/p-7824453817978.html
[15]	Chung J W, Lee J K, Piner E L, et al. Seamless on-wafer integration of Si (100) MOSFETs and GaN HEMTs. IEEE Electron Device Lett, 2009, 30(10): 1015 doi: 10.1109/LED.2009.2027914
[16]	Chung J W, Piner E L, Palacios T. N-face GaN/AlGaN HEMTs fabricated through layer transfer technology. IEEE Electron Device Lett, 2009, 30(2): 113 doi: 10.1109/LED.2008.2010415
[17]	Blasing J, Reiher A, Dadgar A, et al. The origin of stress reduction by low-temperature AlN interlayers. Appl Phys Lett, 2002, 81(15): 2722 doi: 10.1063/1.1512331
[18]	Zhang Xiaoying, Ruan Yujiao, Chen Songyan, et al. GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off. Journal of Semiconductors, 2009, 30(12): 123001 doi: 10.1088/1674-4926/30/12/123001
[19]	Zhao D G, Xu S J, Xie M H, et al. Stress and its effect on optical properties of GaN epilayers grown on Si (111), 6H-SiC (0001), and c-plane sapphire. Appl Phys Lett, 2003, 83(4): 677 doi: 10.1063/1.1592306

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Received: 04 January 2016 Revised: 09 April 2016 Online: Published: 01 August 2016

Article Navigation > Journal of Semiconductors > 2016 > 37(8): 083001

Qing Wang, Yang Liu, Yongjian Sun, Yuzhen Tong, Guoyi Zhang. Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process[J]. Journal of Semiconductors, 2016, 37(8): 083001. doi: 10.1088/1674-4926/37/8/083001 ****Q Wang, Y Liu, Y J Sun, Y Z Tong, G Y Zhang. Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process[J]. J. Semicond., 2016, 37(8): 083001. doi: 10.1088/1674-4926/37/8/083001.

Citation:

Q Wang, Y Liu, Y J Sun, Y Z Tong, G Y Zhang. Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process[J]. J. Semicond., 2016, 37(8): 083001. doi: 10.1088/1674-4926/37/8/083001.

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Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

DOI: 10.1088/1674-4926/37/8/083001

1.
School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
2.
Sino Nitride Semiconductor Ltd., Dongguan 523500, China
3.
College of Engineering, Peking University, Beijing 100871, China

Funds:

Project supported by the Guangdong Innovative Research Team Program (No. 2009010044), the China Postdoctoral Science Foundation (No. 2014M562233), the National Natural Science Foundation of Guangdong, China (No. 2015A030312011), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (No. IOSKL2014KF17)

the Opened Fund of the State Key Laboratory on Integrated Optoelectronics IOSKL2014KF17

Project supported by the Guangdong Innovative Research Team Program 2009010044

the National Natural Science Foundation of Guangdong, China 2015A030312011

the China Postdoctoral Science Foundation 2014M562233

More Information

Corresponding author: Liu Yang, Email: liuy69@mail.sysu.edu.cn; Sun Yongjian, Email: sunyongjian99999@126.com
Received Date: 2016-01-04
Revised Date: 2016-04-09
Published Date: 2016-08-01

Abstract

Abstract

A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template.
- gallium nitride,
- Mo substrate,
- medium bonding,
- laser lift off,
- thermal stability,
- homogeneous epitaxial

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References(19)

References

[1]	Jia H, Guo L, Wang W, et al. Recent progress in GaN-based light-emitting diodes. Adv Mater, 2009, 21(45): 4641 doi: 10.1002/adma.v21:45
[2]	Xing H L, Dora Y, Chini A, et al. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates. IEEE Electron Device Lett, 2004, 25(4): 161 doi: 10.1109/LED.2004.824845
[3]	Liu L, Edgar J H. Substrates for gallium nitride epitaxy. Materials Science & Engineering R, 2002, 37(3): 61 http://cn.bing.com/academic/profile?id=1974072513&encoded=0&v=paper_preview&mkt=zh-cn
[4]	Cao Junsong, Lü Xin, Zhao Lubing, et al. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE. Journal of Semiconductors, 2015, 36(2): 023005 doi: 10.1088/1674-4926/36/2/023005
[5]	Kong Jing, Feng Meixin, Cai Jin, et al. GaN grown on nano-patterned sapphire substrates. Journal of Semiconductors, 2015, 36(4): 043003 doi: 10.1088/1674-4926/36/4/043003
[6]	Zhao Danmei, Zhao Degang, Jiang Desheng, et al. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon. Journal of Semiconductors, 2015, 36(6): 063003 doi: 10.1088/1674-4926/36/6/063003
[7]	Mao Qinghua, Liu Junlin, Wu Xiaoming, et al. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon. Journal of Semiconductors, 2015, 36(9): 093003 doi: 10.1088/1674-4926/36/9/093003
[8]	Okamoto K, Inoue S, Matsuki N, et al. Epitaxial growth of GaN films grown on single crystal Fe substrates. Appl Phys Lett, 2008, 93(25): 251906 doi: 10.1063/1.3056117
[9]	Freitas J A, Rowland L B, Kim J, et al. Properties of epitaxial GaN on refractory metal substrates. Appl Phys Lett, 2007, 90(9): 091910 doi: 10.1063/1.2709512
[10]	Okamoto K, Inoue S, Nakano T, et al. Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers. J Cryst Growth, 2009, 311(5): 1311 doi: 10.1016/j.jcrysgro.2008.11.097
[11]	Arokiaraj J, Leong C K, Lixian V, et al. Bonding of GaN structures with Si (100) substrates using sequentially deposited NiAu metal layers. Appl Phys Lett, 2008, 92(12): 124105 doi: 10.1063/1.2903149
[12]	Gautier S, Moudakir T, Patriarche G, et al. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire. J Cryst Growth, 2013, 370(5): 63 http://cn.bing.com/academic/profile?id=2141194668&encoded=0&v=paper_preview&mkt=zh-cn
[13]	Floyd P D, Chua C L, Treat D W, et al. Wafer fusion of infrared laser diodes to GaN light-emitting heterostructures. IEEE Photon Tech Lett, 1998, 10(11): 1539 doi: 10.1109/68.726742
[14]	Arokiaraj J, Soh C B, Wang X C, et al. Integration of GaN thin films to SiO₂-Si (100) substrates by laser lift-off and wafer fusion method. Superlattices Microstruct, 2006, 40(4): 219 http://www.doc88.com/p-7824453817978.html
[15]	Chung J W, Lee J K, Piner E L, et al. Seamless on-wafer integration of Si (100) MOSFETs and GaN HEMTs. IEEE Electron Device Lett, 2009, 30(10): 1015 doi: 10.1109/LED.2009.2027914
[16]	Chung J W, Piner E L, Palacios T. N-face GaN/AlGaN HEMTs fabricated through layer transfer technology. IEEE Electron Device Lett, 2009, 30(2): 113 doi: 10.1109/LED.2008.2010415
[17]	Blasing J, Reiher A, Dadgar A, et al. The origin of stress reduction by low-temperature AlN interlayers. Appl Phys Lett, 2002, 81(15): 2722 doi: 10.1063/1.1512331
[18]	Zhang Xiaoying, Ruan Yujiao, Chen Songyan, et al. GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off. Journal of Semiconductors, 2009, 30(12): 123001 doi: 10.1088/1674-4926/30/12/123001
[19]	Zhao D G, Xu S J, Xie M H, et al. Stress and its effect on optical properties of GaN epilayers grown on Si (111), 6H-SiC (0001), and c-plane sapphire. Appl Phys Lett, 2003, 83(4): 677 doi: 10.1063/1.1592306

Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

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Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

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Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

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Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

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