Fig. 1.
The p-type polysilicon structure in one dimension[6].
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Jian Wang, Rongyan Chuai. The algorithm for the piezoresistance coefficients of p-type polysilicon[J]. Journal of Semiconductors, 2016, 37(8): 082001. doi: 10.1088/1674-4926/37/8/082001
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J Wang, R Y Chuai. The algorithm for the piezoresistance coefficients of p-type polysilicon[J]. J. Semicond., 2016, 37(8): 082001. doi: 10.1088/1674-4926/37/8/082001.
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The algorithm for the piezoresistance coefficients of p-type polysilicon
DOI: 10.1088/1674-4926/37/8/082001
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Abstract
In order to improve the piezoresistance theory of polysilicon, based on the tunneling piezoresistance model, using the mechanisms of approximate valence band equation and shifts of the hole transfer and hole conduction mass by stress, a novel algorithm for the piezoresistance coefficients of p-type polysilicon is presented. It proposes three fundamental piezoresistance coefficients π11, π12 and π44 of the grain neutral and grain boundary regions, separately. With those piezoresistance coefficients, the gauge factors of the p-type polysilicon nanofilm and the p-type common polysilicon film are calculated, and then the plots of the gauge factor as a function of doping concentration are given, which are consistent with the experimental results. -
References
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