J. Semicond. > 2017, Volume 38 > Issue 3 > 031001

SPECIAL TOPIC ON 2D MATERIALS AND DEVICES

Preface to the Special Topic on 2D Materials and Devices

Jingbo Li1, and Xinran Wang2,

+ Author Affiliations

 Corresponding author: Jingbo Li,Email:jbli@semi.ac.cn; Xinran Wang,Email:xrwang@nju.edu.cn

DOI: 10.1088/1674-4926/38/3/031001

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The great research progresses in materials sciences in the past decades have revealed that reduced dimension can have significant influences on the properties of materials. Since the successful fabrication of graphene in 2004 by Novoselov and Geim, two-dimensional (2D) crystals have attracted great attention because of their novel properties and great application potentials. 2D materials are single and fewatom- thick layers of crystalline materials. Within a single layer of 2D materials, atoms are connected through strong covalent bonds, whereas neighboring layers are typically only bonded via weak van der Waals interactions. With the rapid developments in both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus. In 2D materials, electrons are mainly confined into planes, leading to many novel electronic properties such as massless carriers, strong excitonic effects and valley polarization that have potential application in the next generation of electronic devices. In addition, due to the 2D character, 2D materials have maximum mechanical flexibility and optical transparency which are feasible for highly flexible and transparent electronic/optoelectronic devices. Moreover, van der Waals heterostructures can be formed through stacking of different 2D materials. Such heterostructures have atomic sharp interface without dangling bond, and there is no lattice-match requirement. In terms of material choice and layer thickness control, there can be enormous variability in designing van der Waals heterostructures, which is promising to fulfill the demands of future nanoelectronic industry on multifunctionality. Although the industrialization of 2D materials is still at a relatively early stage, based on the research achievements made, we fully believe that 2D materials could be utilized for daily life in the future.

Here we organized a specific topic on 2D materials and devices, and we are grateful to the 12 groups of researchers who are working in 2D materials and were invited to either overview recent important progress in literature or contribute their research progress in 2D materials. We have 5 reviews focusing on the synthesis of 2D BN, the Raman properties of transition metal dichalcogenides, and van der Waals heterostructures, optoelectronics based on 2D transition metal dichalcogenides (TMDs) and heterostructures, respectively. In addition, we have 7 research papers covering the synthesis and imaging, photoresponse, doping properties, band structure modulation, and quantum transport in various 2D materials. The topics presented in this special issue are all the main and/or future research directions in 2D materials. We sincerely hope that the published papers in this special issue can provide useful information to the readers working in this hot area.



1

Preface to Special Topic on Quantum Dot Semiconductor Optoelectronic Materials, Devices, and Characterization

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Journal of Semiconductors, 2025, 46(4): 040101. doi: 10.1088/1674-4926/25030801

2

Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices

Xiaoxing Ke, Yong Zhang

Journal of Semiconductors, 2022, 43(4): 040101. doi: 10.1088/1674-4926/43/4/040101

3

Preface to the Special Issue on 2D-Materials-Related Physical Properties and Optoelectronic Devices

Ping-Heng Tan, Lijun Zhang, Lun Dai, Shuyun Zhou

Journal of Semiconductors, 2019, 40(6): 060101. doi: 10.1088/1674-4926/40/6/060101

4

Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

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Journal of Semiconductors, 2019, 40(1): 010101. doi: 10.1088/1674-4926/40/1/010101

5

Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices

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Journal of Semiconductors, 2019, 40(12): 120101. doi: 10.1088/1674-4926/40/12/120101

6

Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si

Huiyun Liu, Yikai Su, Chuanbo Li, Xuhan Guo

Journal of Semiconductors, 2019, 40(10): 100101. doi: 10.1088/1674-4926/40/10/100101

7

Materials and applications of bioresorbable electronics

Xian Huang

Journal of Semiconductors, 2018, 39(1): 011003. doi: 10.1088/1674-4926/39/1/011003

8

The applications of carbon nanomaterials in fiber-shaped energy storage devices

Jingxia Wu, Yang Hong, Bingjie Wang

Journal of Semiconductors, 2018, 39(1): 011004. doi: 10.1088/1674-4926/39/1/011004

9

Flexible devices: from materials, architectures to applications

Mingzhi Zou, Yue Ma, Xin Yuan, Yi Hu, Jie Liu, et al.

Journal of Semiconductors, 2018, 39(1): 011010. doi: 10.1088/1674-4926/39/1/011010

10

Preface to the Special Topic on Perovskite Solar Cells

Jingbi You

Journal of Semiconductors, 2017, 38(1): 011001. doi: 10.1088/1674-4926/38/1/011001

11

Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

Sunny Anand, R.K. Sarin

Journal of Semiconductors, 2017, 38(2): 024001. doi: 10.1088/1674-4926/38/2/024001

12

ZnO1-xTex and ZnO1-xSx semiconductor alloys as competent materials for opto-electronic and solar cell applications:a comparative analysis

Utsa Das, Partha P. Pal

Journal of Semiconductors, 2017, 38(8): 082001. doi: 10.1088/1674-4926/38/8/082001

13

Preface to the Special Topic on Devices and Circuits for Wearable and IoT Systems

Zhihua Wang, Yong Hei, Zhangming Zhu

Journal of Semiconductors, 2017, 38(10): 101001. doi: 10.1088/1674-4926/38/10/101001

14

Photodetectors based on two dimensional materials

Zheng Lou, Zhongzhu Liang, Guozhen Shen

Journal of Semiconductors, 2016, 37(9): 091001. doi: 10.1088/1674-4926/37/9/091001

15

Research progress of Si-based germanium materials and devices

Buwen Cheng, Cheng Li, Zhi Liu, Chunlai Xue

Journal of Semiconductors, 2016, 37(8): 081001. doi: 10.1088/1674-4926/37/8/081001

16

NTC and electrical properties of nickel and gold doped n-type silicon material

Dong Maojin, Chen Zhaoyang, Fan Yanwei, Wang Junhua, Tao Mingde, et al.

Journal of Semiconductors, 2009, 30(8): 083007. doi: 10.1088/1674-4926/30/8/083007

17

An All-E-Beam Lithography Process for the Patterningof 2D Photonic Crystal Waveguide Devices

Yu Hejun, Yu Jinzhong, Chen Shaowu

Chinese Journal of Semiconductors , 2006, 27(11): 1894-1899.

18

Status and Trends in Advanced SOI Devices and Materials

Balestra Francis

Chinese Journal of Semiconductors , 2006, 27(4): 573-582.

19

Status and Trends in Advanced SOI Devices and Materials

Wang Tianxing, Wei Hongxiang, Ren Cong, Han Xiufeng, Clifford E, et al.

Chinese Journal of Semiconductors , 2006, 27(4): 591-597.

20

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Yang Hui, Chen Lianghui, Zhang Shuming, Chong Ming, Zhu Jianjun, et al.

Chinese Journal of Semiconductors , 2005, 26(2): 414-417.

1. Zhou, Z., Cui, Y., Tan, P.-H. et al. Optical and electrical properties of two-dimensional anisotropic materials. Journal of Semiconductors, 2019, 40(6): 061001. doi:10.1088/1674-4926/40/6/061001
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    Jingbo Li, Xinran Wang. Preface to the Special Topic on 2D Materials and Devices[J]. Journal of Semiconductors, 2017, 38(3): 031001. doi: 10.1088/1674-4926/38/3/031001
    J B Li, X R Wang. Preface to the Special Topic on 2D Materials and Devices[J]. J. Semicond., 2017, 38(3): 031001. doi: 10.1088/1674-4926/38/3/031001.
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    Received: Revised: Online: Published: 01 March 2017

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      Jingbo Li, Xinran Wang. Preface to the Special Topic on 2D Materials and Devices[J]. Journal of Semiconductors, 2017, 38(3): 031001. doi: 10.1088/1674-4926/38/3/031001 ****J B Li, X R Wang. Preface to the Special Topic on 2D Materials and Devices[J]. J. Semicond., 2017, 38(3): 031001. doi: 10.1088/1674-4926/38/3/031001.
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      Jingbo Li, Xinran Wang. Preface to the Special Topic on 2D Materials and Devices[J]. Journal of Semiconductors, 2017, 38(3): 031001. doi: 10.1088/1674-4926/38/3/031001 ****
      J B Li, X R Wang. Preface to the Special Topic on 2D Materials and Devices[J]. J. Semicond., 2017, 38(3): 031001. doi: 10.1088/1674-4926/38/3/031001.

      Preface to the Special Topic on 2D Materials and Devices

      DOI: 10.1088/1674-4926/38/3/031001
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