J. Semicond. > 2018, Volume 39 > Issue 1 > 011006
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Special Issue on Flexible and Wearable Electronics: from Materials to Applications

Flexible magnetic thin films and devices

Ping Sheng1, 2, 3, Baomin Wang1, 2, and Runwei Li1, 2,

+ Author Affiliations

 Corresponding author: Baomin Wang, wangbaomin@nimte.ac.cn; Runwei Li, runweili@nimte.ac.cn

DOI: 10.1088/1674-4926/39/1/011006

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Abstract: Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices.

Key words: flexible, strain/stress, magnetic anisotropy, magnetic thin films/magnetic devices



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Fig. 1.  (Color online) The molds designed for applying strains[22]: (a) tensile strain, (b) compressive strain. Hysteresis loops of Co40Fe40B20 (70 nm)/PET under various external strains: (c) tensile strain, (d) compressive strain applied along the hard axis, (e) tensile strain, (f) compressive strain applied along the easy axis.

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Fig. 2.  (Color online) Strain dependence of normalized Mr/Ms and Hc for strains applied along the easy and hard axes, respectively[22].

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Fig. 3.  (Color online) Magnetic hysteresis loops of Fe81Ga19(50 nm)/Ta(10 nm)/PET with the direction of magnetic field along the (a) easy and (b) hard axes under compressive and tensile strains[38].

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Fig. 4.  (Color online) Temperature dependence of magnetic properties of Co40Fe40B20/PVDF[43]. (a) In-plane magnetic hysteresis loops measured along x direction at different temperatures. (b) In-plane magnetic hysteresis loops measured along y direction at different temperatures. (c) Temperature dependence of the remanent magnetization with H along x and y directions, respectively. The inset: angular dependence of Mr/Ms at T = 290 and 310 K. (d) Temperature dependence of the remanent magnetization with H along x and y directions for the samples prepared at different temperatures.

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Fig. 5.  (Color online) Angular dependence of normalized remanent magnetization for Fe81Ga19/PVDF films with different compressive strains along the x direction[23].

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Fig. 6.  (Color online) Angular dependence of normalized remanent magnetization for the Fe81Ga19/PVDF film with a compressive strain of (a) 0.06% and (b) 0.00% along the x direction under different electric fields[23].

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Fig. 7.  (Color online) (a) Magnetization of FeGa/PVDF film reversed by thermal cycling under an alternatively positive and negative magnetic field. Top: thermal cycles between 280 and 320 K. Middle: an alternatively positive and negative magnetic field used for the measurements. Bottom: measurements of magnetization under the sequence of thermal cycles and magnetic field[23].

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Fig. 8.  (Color online) Strain dependence of (a) loop squareness, (b) Hc, (c) Heb for H parallel and ε perpendicular to the PD, and (d) Hc for H perpendicular and ε parallel to the PD in FeGa(10 nm)/IrMn(tIrMn) bilayers with different tIrMn[20].

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Fig. 9.  (Color online) Hysteresis loops measured at different temperatures for the FeGa/IrMn bilayers deposited on flexible PVDF membranes with the PD set (c, d) along the x direction and (e, f) along the y direction. The magnetic field is applied at (c, e) θ = 0° and (d, f) θ = 90° with respect to the PD. The configurations of measurement are schematically indicated in the insets of (c) and (e), respectively[52].

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Fig. 10.  (Color online) (a) A schematic illustration of the experimental setup for sample fabrication (b) diagram of the flattened state of magnetic film (c) angular dependence of normalized Mr/Ms of 70 nm CoFeB film (d) the curvature radii dependence of the anisotropy field (Hk) for CoFeB films with different thicknesses (e) the thickness of film dependence of the anisotropy field (Hk) with different curvature radii, (f) the thickness of substrate dependence of the anisotropy field (Hk) for CoFeB films with different curvature radii[53].

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Fig. 11.  (Color online) (a) A schematic illustration of the experimental setup for sample fabrication during depositing processes, both bowed growth and magnetic field are used to induce the anisotropy of magnetic materials. (b) Diagram of the flattened state of magnetic film after deposition, a compressive stress is produced in film when substrates are shaped from convex to flat. (c) The strain dependence of normalized Mr/Ms for bending CoFeB films with and without pre-induced magnetic anisotropy, respectively[55].

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Fig. 12.  (Color online) (a) Schematic illustration of the method A used to fabricate wrinkled FeGa films. (b) Schematic representation of the method B used to fabricate wrinkled FeGa films[57].

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Fig. 13.  (Color online) Hysteresis loops for FeGa films with different thicknesses obtained by the method A when the magnetic field is applied (a) parallel and (b) perpendicular to wrinkles, (c) coercive field Hc as a function of the magnetic field orientation with respect to the wrinkles. Method B when the magnetic field is applied (d) parallel and (e) perpendicular to wrinkles, (f) coercive field Hc as a function of the magnetic field orientation with respect to the wrinkles[57].

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Fig. 14.  (Color online) (a) Schematic illustration of (Co/Cu)N MLs deposited on Si and flexible substrates, and a photographic image of circularly bent (Co/Cu)20 MLs deposited on polyester substrate. (b) Strain-dependent GMR of (Co-1 nm/Cu-t nm)30 MLs deposited on polyester substrates under 0.2 Tesla[16].

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Fig. 15.  (Color online) (a) Fabrication process of stretchable magnetic sensors with random wrinkling and periodic fracture of the spin valve stack. In situ GMR measurements during tensile deformations of the prepared SV sensor elements. (b) Full loop and (c) minor loop GMR curves at different applied strains. (d) Magnitude of the GMR ratio and absolute sample resistance in dependence of tensile strain up to the point where the electrical contact is lost. (e) Coercivity and sensitivity of the free layer over applied tensile strain[11].

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Fig. 16.  (Color online) (a) The layer structure of the dual spin valve (not to scale). (b) An illustrative drawing of the experimental setup for the sample fabrication. (c) A schematic diagram for the appearance of as-fabricated sample after releasing the tensile pre-strain[78].

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Fig. 17.  (Color online) GMR curves of (a) SVR-0% without applied strain, (b) SVR-30% with 0 (solid circles) and 25% (open circles) applied tensile strain, and (c) SVR-50% with 0 (solid circles) and 25% (open circles) applied tensile strain. Inset in (c) shows the GMR measurement geometry: both the current and the applied tensile strain are parallel to the ribbons, while the magnetic field is applied perpendicular to the ribbons. The applied tensile strain dependence of (d) the GMR ratio (ΔR/R0)max (squares), (e) the magnetic field sensitivity S (circles), and (f) the zero-field resistance R0 (triangles) for SVR-30% (solid symbols) and SVR-50% (open symbols). The uniaxial tensile strain from 0 to 35% is applied along the ribbons[78].

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Fig. 18.  (Color online) (a) The post fabrication step to obtain ultra-stretchable GMR sensors from imperceptible elements by face-down lamination onto a highly pre-stretched stripe of VHB tape. Four contact pads are reaching beyond the tape (top). Relaxing the elastomer results in out-of-plane wrinkling of the sensor foil and enables re-stretching (bottom). (b) GMR curves of an imperceptible Co(1 nm)/[Co(1 nm)/Cu(2.2 nm)]30 multilayer element at a flat state before lamination onto the pre-stretched VHB support and at a highly wrinkled state after the release of pre-strain[79].

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Fig. 19.  (Color online) (a) A Co(1 nm)/[Co(1 nm)/Cu(2.2 nm)]30 sample mounted to the in situ stretching stage relaxed (left) and fully elongated (up). The arrow in the left image indicates the axis of the applied magnetic field. (b) GMR curves recorded for strains from 0% to 250% in increments of 50%, plus 270% and 275%, according to the legend[79].

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Fig. 20.  (Color online) Imperceptible GMR sensors: (a)–(c) Imperceptible GMR sensor array on a human palm with one element connected to a readout circuit during rest, moving the hand and in proximity to a permanent magnet, respectively. All scale bars: 20 mm. (d) recorded resistance of the sensor element for panels (a)–(c)[79].

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    Received: 19 July 2017 Revised: 01 November 2017 Online: Accepted Manuscript: 08 December 2017Published: 01 January 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(1): 011006
      Ping Sheng, Baomin Wang, Runwei Li. Flexible magnetic thin films and devices[J]. Journal of Semiconductors, 2018, 39(1): 011006. doi: 10.1088/1674-4926/39/1/011006 ****P Sheng, B M Wang, R W Li, Flexible magnetic thin films and devices[J]. J. Semicond., 2018, 39(1): 011006. doi: 10.1088/1674-4926/39/1/011006.
      Citation:
      Ping Sheng, Baomin Wang, Runwei Li. Flexible magnetic thin films and devices[J]. Journal of Semiconductors, 2018, 39(1): 011006. doi: 10.1088/1674-4926/39/1/011006 ****
      P Sheng, B M Wang, R W Li, Flexible magnetic thin films and devices[J]. J. Semicond., 2018, 39(1): 011006. doi: 10.1088/1674-4926/39/1/011006.
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      Flexible magnetic thin films and devices

      DOI: 10.1088/1674-4926/39/1/011006
      • 1.

        CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

      • 2.

        Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

      • 3.

        Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

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      Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

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