J. Semicond. > 2018, Volume 39 > Issue 1 > 011007
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Special Issue on Flexible and Wearable Electronics: from Materials to Applications

Graphene-based flexible and wearable electronics

Tanmoy Das†, Bhupendra K. Sharma†, Ajit K. Katiyar and Jong-Hyun Ahn

+ Author Affiliations

 Corresponding author: Authors to whom correspondence should be addressed to. Electronic addresses: ahnj@yonsei.ac.kr

DOI: 10.1088/1674-4926/39/1/011007

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Abstract: Graphene with an exceptional combination of electronic, optical and outstanding mechanical features has been proved to lead a completely different kind of 2-D electronics. The most exciting feature of graphene is its ultra-thin thickness, that can be conformally contacted to any kind of rough surface without losing much of its transparency and conductivity. Graphene has been explored demonstrating various prototype flexible electronic applications, however, its potentiality has been proven wherever transparent conductive electrodes (TCEs) are needed in a flexible, stretchable format. Graphene-based TCEs in flexible electronic applications showed greatly superior performance over their conventionally available competitor indium tin oxide (ITO). Moreover, enormous applications have been emerging, especially in wearable devices that can be potentially used in our daily life as well as in biomedical areas. However, the production of high-quality, defect-free large area graphene is still a challenge and the main hurdle in the commercialization of flexible and wearable products. The objective of the present review paper is to summarize the progress made so far in graphene-based flexible and wearable applications. The current developments including challenges and future perspectives are also highlighted.

Key words: graphene, flexible electronics, wearable electronics, transparent conductive electrode



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Fig. 1.  (Color online) (a) The tuning of charge carrier from electrons to holes under opposite bias indicating the ambipolar electric field effect in monolayer graphene. Insets show the conical low-energy spectrum, representing the changes in Fermi energy position with applied gate voltage[11]. (b) Measured resistivity and mobility of suspended graphene device as a function of gate voltage before (blue) and after (red) current annealing. Gray dotted line shows the data of the device fabricated on the substrate[12]. (c) The conductance of a single layer graphene-based top-gate FET as a function of the bias voltage under different back-gate voltages. The inset shows the schematic structure of the fabricated device. (d) An array of transistors fabricated on graphene wafer produced by thermal desorption of Si from the c-face of a SiC wafer. The inset shows the enlarged view of an individual transistor. (e) High-frequency performance of a 240 nm gate length graphene transistor[13].

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Fig. 2.  (Color online) (a) Schematic diagrams of the growth kinetics of CVD-produced graphene via precipitation and surface-mediated reaction[23, 24]. (b) A photographic image of as-grown 3 inch graphene film on 300 nm thick Ni on a SiO2/Si substrate. (c) Raman spectra of the large-area graphene layers grown on Cu (blue and red lines) and Ni (black line) films, which subsequently transferred on PDMS substrate (green line)[34]. (d) TEM images of as-grown graphene films on thin(300-nm) nickel layers of different thicknesses[35]. (e) Optical microscope image of transferred monolayer CVD graphene on SiO2/Si, which was grown on Cu foil also showing wrinkles and two-and three-layer regions[22].

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Fig. 3.  (Color online) (a) Illustration of the roll-based production of graphene films grown on a copper foil[38]. (b) Schematic illustration of a face-to-face method for transferring graphene mediated by capillary bridges. (c) Image of a partially submerged 8-inch PMMA/graphene/water layer/SiO2/Si wafer in water during face-to-face transfer[41]. (d) Demonstration of transparent ultra-large 35-inch graphene film transferred on PET[38]. (e) Image of the graphene/epoxy/PET roll with a width of 230 mm PET base[42].

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Fig. 4.  (Color online) (a) Transfer (Ids–Vgs) characteristics of graphene FETs on a plastic substrate and the inset showing the images of an array of devices on a plastic substrate[56]. (b) Photographic image of stretchable ion-gel gated graphene FETs on a balloon (top): with images of graphene transistors on PDMS substrate (inset) and the normalized hole/electron mobility of graphene FET as a function of the stretching level (bottom)[57]. (c) Typical transfer characteristics (ID versus VG) of a coplanar-gate graphene transistor and photograph of the coplanar-gate graphene transistor array (inset)[58]. (d) Transfer characteristic of graphene/GO transistors, indicating the hole and electron mobilities are 300 and 250 cm2/(V·s) at VD = −0.1 V, respectively. The inset shows the schematic bottom-gated all-graphene-based transistor[59].(e) Photograph of large-area flexible graphene transistor array (scale bar: 5 mm). The inset shows the optical image of a completed device unit[60]. (f) The de-embedded current gain with an intrinsic fT of 25 GHz for flexible GFET. VG is biased at the peak transconductance and VD = 0.5 V. Schematic of water-resistant flexible multi-finger embedded gate FET (upper inset) and flexible GFETs attached to the bending set up shown in the lower inset[55].

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Fig. 5.  (Color online) (a) The screen printing process utilized in fabricating touch screen. (b) Electrotechnical behavior of graphene and ITO based touch screens against the applied tensile strain. (c) Photograph of graphene-based during its operation. (d) Photograph of graphene-based touch screen in bending form[38]. (e) Photograph of graphene films based multi-touch screen integrated into a mobile phone (left side) whereas the right side shows the ITO based touch screen in a mobile phone for comparison purposes[74].

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Fig. 6.  (Color online) (a) Schematic representation of a hole-injection process through a self-organized HIL having a tunable work-function (GraHIL) from a graphene anode to the NPB layer. (b) Schematic flow of the fabrication steps of OLED. (c) Variation of luminous efficiency of OLED devices using various graphene layers (doped with HNO3 or AuCl3) or ITO as an anode. (d) Photograph of green fluorescent OLED in the bent form using 4 layers doped graphene films showing its flexible behavior[77].

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Fig. 7.  (Color online) (a) Schematic device structure showing the graphene sandwiched between low index hole injecting layer (HIL) and high index TiO2 for making the high-efficiency graphene-based OLEDs. (b) Photograph of the fabricated OLED device. (c) & (d) Variation of EQE and PE with respect to luminance for flexible OLED, respectively. (e) Variation of luminance with respect to current density under bending cycles. (f) Photograph of flexible OLED during its operation mode [78].

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Fig. 8.  (Color online) (a) Schematic representation of the electrostatically doped organic solar cell. (b) Shows the variation of current density (square) and PCE (triangle) for different numbers of graphene layers. The filled and open symbols represent the characteristics of undoped and with electrostatically doped devices, respectively. (c) Photograph of the flexible organic solar cell attached to the rolling machine. (d) & (e) Variation of current density with voltage and normalized parameters of solar cell device, respectively in a flexible format. (f) Photograph of the fabricated flexible solar cell. The inset shows the schematic representation of device assembly. (g) & (h) Show the solar cell performance parameters such as fill factor (FF), open circuit voltage ( Voc), short-circuit current density (Jsc), and PCE under flexible test[96].

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Fig. 9.  (Color online) (a) Graphene-based strain sensor showing the significant change in resistance upon stretching. The inset shows the photograph of a sensor mounted conformally on wearable gloves[100]. (b) Shows the variation in pressure map when a tactile sensor is subjected to a gentle touch of 9 kPa[101]. (c) The fabricated tactile sensor shows the response from the wrist pulse[102]. (d) Photograph (upper panel) of graphene-based capacitive touch sensor mounted on the human hand and its responses are shown in the lower panel upon multi-touch, spreading and scrolling[103]. (e) & (f) Response of graphene electronic tattoo (GFT) based skin hydration sensor and temperature sensors, respectively [104].

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Fig. 10.  (Color online) (a) The schematic representation of a transparent glucose sensor mounted on a contact lens. (b) The wireless sensing behavior of glucose concentration with and without wearing the contact lens on a rabbit eye. (c) The frequency response of the sensor during a pressure cycle[106]. (d) Optical image of the diabetes patch under mechanical deformation. (e) Monitoring of glucose and pH in vitro measurement under hyperglycemia in artificial sweat. (f) Photograph of graphene-hybrid electrochemical device array on the human skin. (g) Monitoring of glucose concentrations with time in the sweat and blood of a human. (h) Comparison of the average glucose concentrations with the commercial glucose before and after correction using the measured pH was carried out[105].

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Fig. 11.  (Color online) (a) Photographic image of graphene-based triboelectric touch sensor mounted on the wrist (top) and the spatial mapping image of current modulated by two-finger touch[122]. (b) Photograph of the conformal TENGs attached on the palm (top) and the bottom panel shows optical images of the self-powered contact sensors with contact to the different number of fingers and corresponding raw data[123]. (c) The stretchability of graphene is shown (upper) and the output voltage from GTNGs with various numbers of graphene layers under a vertical compressive force, with the inset which shows a captured image of three LED arrays that are simultaneously lit up by the power output generated from the GTNG[124].

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    Received: 07 August 2017 Revised: 27 September 2017 Online: Accepted Manuscript: 27 December 2017Published: 01 January 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(1): 011007
      Tanmoy Das, Bhupendra K. Sharma, Ajit K. Katiyar, Jong-Hyun Ahn. Graphene-based flexible and wearable electronics[J]. Journal of Semiconductors, 2018, 39(1): 011007. doi: 10.1088/1674-4926/39/1/011007 ****T Das, Bhupendra K. Sharma, Ajit K. Katiyar, J Ahn, Graphene-based flexible and wearable electronics[J]. J. Semicond., 2018, 39(1): 011007. doi: 10.1088/1674-4926/39/1/011007.
      Citation:
      Tanmoy Das, Bhupendra K. Sharma, Ajit K. Katiyar, Jong-Hyun Ahn. Graphene-based flexible and wearable electronics[J]. Journal of Semiconductors, 2018, 39(1): 011007. doi: 10.1088/1674-4926/39/1/011007 ****
      T Das, Bhupendra K. Sharma, Ajit K. Katiyar, J Ahn, Graphene-based flexible and wearable electronics[J]. J. Semicond., 2018, 39(1): 011007. doi: 10.1088/1674-4926/39/1/011007.
      shu

      Graphene-based flexible and wearable electronics

      DOI: 10.1088/1674-4926/39/1/011007

      • School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722, Republic of Korea

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      Project supported by the National Research Foundation of Korea (No. NRF-2015R1A3A2066337).

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      • Corresponding author: Authors to whom correspondence should be addressed to. Electronic addresses: ahnj@yonsei.ac.kr
      • Received Date: 2017-08-07
      • Revised Date: 2017-09-27
        • Available Online: 2017-01-01
      • Published Date: 2018-01-01

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