J. Semicond. > 2018, Volume 39 > Issue 1 > 011008
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Special Issue on Flexible and Wearable Electronics: from Materials to Applications

Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi and Jin-Seong Park

+ Author Affiliations

 Corresponding author: Prof. Jin-Seong Park ( jsparklime@hanyang.ac.kr)

DOI: 10.1088/1674-4926/39/1/011008

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Abstract: The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types (directions). The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields.

Key words: atomic layer deposition (ALD), oxide semiconductor, thin film transistor, flexible device, mechanical stress



[1]
Komatsu R, Nakazato R, Sasaki T, et al. Repeatedly foldable AMOLED display. J Soc Inform Display, 2015, 23(2): 41 doi: 10.1002/jsid.276
[2]
Nakajima Y, Takei T, Motomura G, et al. Flexible AMOLED display using an oxide-TFT backplane and inverted OLEDs. Photonics Conference (IPC), IEEE, 2014: 42
[3]
Choi M C, Kim Y, Ha C S. Polymers for flexible displays: From material selection to device applications. Prog Polym Sci, 2008, 33581
[4]
Heremans P, Tripathi A K, de Jamblinne de Meux A, et al. Mechanical and electronic properties of thin‐film transistors on plastic, and their integration in flexible electronic applications. Adv Mater, 2016, 28: 4266 doi: 10.1002/adma.v28.22
[5]
Street R A. Thin film transistors. Adv Mater, 2009, 21(20): 2007 doi: 10.1002/adma.v21:20
[6]
Powell M J. The physics of amorphous-silicon thin-film transistors. IEEE Trans Electron Devices, 1989, 36(12): 2753 doi: 10.1109/16.40933
[7]
Nathan A, Kumar A, Sakariya K, et al. Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic. IEEE J Solid-State Circuits, 2004, 39(9): 1477 doi: 10.1109/JSSC.2004.829373
[8]
Klauk H. Organic thin-film transistors. Chem Soc Rev, 2010, 39(7): 2643 doi: 10.1039/b909902f
[9]
Dimitrakopoulos C D, Malenfant P R. Organic thin film transistors for large area electronics. Adv Mater, 2002, 14(2): 99 doi: 10.1002/(ISSN)1521-4095
[10]
Matters M, De Leeuw D, Herwig P, et al. Bias-stress induced instability of organic thin film transistors. Synthetic Metals, 1999, 102(1–3): 998 doi: 10.1016/S0379-6779(98)01162-X
[11]
Gomes H L, Stallinga P, Dinelli F, et al. Bias-induced threshold voltages shifts in thin-film organic transistors. Appl Phys Lett, 2004, 84(16): 3184 doi: 10.1063/1.1713035
[12]
Powell M. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors. Appl Phys Lett, 1983, 43(6): 597 doi: 10.1063/1.94399
[13]
Theiss S, Wagner S. Amorphous silicon thin-film transistors on steel foil substrates. IEEE Electron Device Lett, 1996, 17(12): 578 doi: 10.1109/55.545776
[14]
Serikawa T, Omata F. High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films. IEEE Trans Electron Devices, 2002, 49(5): 820 doi: 10.1109/16.998590
[15]
Jeong J K. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays. Semicond Sci Technol, 2011, 26(3): 034008 doi: 10.1088/0268-1242/26/3/034008
[16]
Kenji N, Hiromichi O, Akihiro T, et al. Room-temperature fabrication of transparent f1 exible thin-film transistors using amorphous oxide semiconductors. Nature, 2004, 432: 488 doi: 10.1038/nature03090
[17]
Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors: a review of recent advances. Adv Mater, 2012, 24(22): 2945 doi: 10.1002/adma.v24.22
[18]
Xingwei D, Hao Z, He D, et al. Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator. Superlattices Microstruct, 2014, 76: 156 doi: 10.1016/j.spmi.2014.10.007
[19]
Kenji N, Hiromichi O, Kazushige U, et al. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science, 2003, 300: 1269 doi: 10.1126/science.1083212
[20]
Han D D, Zhang Y, Cong Y Y, et al. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate. Sci Rep, 2016, 6: 38984 doi: 10.1038/srep38984
[21]
Choi M C, Kim Y, Ha C S. Polymers for flexible displays: from material selection to device applications. Prog Polym Sci, 2008, 33(6): 581 doi: 10.1016/j.progpolymsci.2007.11.004
[22]
Ok K C, Ko Park S H, Hwang C S, et al. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates. Appl Phys Lett, 2014, 104(6): 063508 doi: 10.1063/1.4864617
[23]
Jeong J K, Jeong J H, Yang H W, et al. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Appl Phys Lett, 2007, 91(11): 113505 doi: 10.1063/1.2783961
[24]
Bayraktaroglu B, Leedy K, Neidhard R. Microwave ZnO thin-film transistors. IEEE Electron Device Lett, 2008, 29(9): 1024 doi: 10.1109/LED.2008.2001635
[25]
Mativenga M, Choi M H, Choi J W, et al. Transparent flexible circuits based on amorphous-indium–gallium–zinc–oxide thin-film transistors. IEEE Electron Device Lett, 2011, 32(2): 170 doi: 10.1109/LED.2010.2093504
[26]
Yang S, Bak J Y, Yoon S M, et al. Low-temperature processed flexible In–Ga–Zn–O thin-film transistors exhibiting high electrical performance. IEEE Electron Device Lett, 1692, 32(12): 1692
[27]
Johnson R W, Hultqvist A, Bent S F. A brief review of atomic layer deposition: from fundamentals to applications. Mater Today, 2014, 17(5): 236 doi: 10.1016/j.mattod.2014.04.026
[28]
Kim H, Maeng W J. Applications of atomic layer deposition to nanofabrication and emerging nanodevices. Thin Solid Films, 2009, 517(8): 2563 doi: 10.1016/j.tsf.2008.09.007
[29]
Seol Y, Noh H, Lee S, et al. Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors. Appl Phys Lett, 2008, 93(1): 244
[30]
Seol Y, Park J, Tien N, et al. Reduction of electrical hysteresis in cyclically bent organic field effect transistors by incorporating multistack hybrid gate dielectrics. J Electrochem Soc, 2010, 157(11): H1046 doi: 10.1149/1.3489944
[31]
Kim D, Hwang B, Park J, et al. Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors. Org Electron, 2012, 13(11): 2401 doi: 10.1016/j.orgel.2012.06.038
[32]
Carcia P, McLean R, Groner M, et al. Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition. J Appl Phys, 2009, 106(2): 023533 doi: 10.1063/1.3159639
[33]
Wu D S, Chen T N, Lay E, et al. Transparent barrier coatings on high temperature resisting polymer substrates for flexible electronic applications. J Electrochem Soc, 2010, 157(2): C47 doi: 10.1149/1.3261761
[34]
Sykes G F, St Clair A K. The effect of molecular structure on the gas transmission rates of aromatic polyimides. J Appl Polym Sci, 1986, 32(2): 3725 doi: 10.1002/app.1986.070320228
[35]
Park J S, Kim T W, Stryakhilev D, et al. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors. Appl Phys Lett, 2009, 95(1): 013503 doi: 10.1063/1.3159832
[36]
Hekmatshoar B, Kattamis A Z, Cherenack K H, et al. Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic. IEEE Electron Device Lett, 2008, 29(1): 63 doi: 10.1109/LED.2007.910800
[37]
Hsu H H, Chang C Y, Cheng C H. A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature. IEEE Electron Device Lett, 2013, 34(6): 768 doi: 10.1109/LED.2013.2258455
[38]
Kim Y H, Chung C H, Moon J, et al. Oxide-silicon-oxide buffer structure for ultralow temperature polycrystalline silicon thin-film transistor on plastic substrate. IEEE Electron Device Lett, 2006, 27(7): 579 doi: 10.1109/LED.2006.877713
[39]
Yun S J, Ko Y W, Lim J W. Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition. Appl Phys Lett, 2004, 85(21): 4896 doi: 10.1063/1.1826238
[40]
Ghosh A, Gerenser L, Jarman C, et al. Thin-film encapsulation of organic light-emitting devices. Appl Phys Lett, 2005, 86(22): 223503 doi: 10.1063/1.1929867
[41]
Murley D, French I, Deane S, et al. The effect of hydrogen dilution on the aminosilane plasma regime used to deposit nitrogen-rich amorphous silicon nitride. J Non-cryst Solids, 1996, 198: 1058
[42]
Smith D L, Alimonda A S, Chen C C, et al. Mechanism of SiNxHy deposition from NH3–SiH4 plasma. J Electrochem Soc, 1990, 137(2): 614 doi: 10.1149/1.2086517
[43]
Park M J, Yun D J, Ryu M K, et al. Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly (ethylene naphthalate) substrates. J Mater Chem C, 2015, 3(18): 4779 doi: 10.1039/C5TC00048C
[44]
Sheng J, Choi D W, Lee S H, et al. Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states. J Mater Chem C, 2016, 4(32): 7571 doi: 10.1039/C6TC01199C
[45]
Jeong H J, Han K L, Ok K C, et al. Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors. J Inform Display, 2017, 18: 87 doi: 10.1080/15980316.2017.1294116
[46]
Ok K C, Oh S, Jeong H J, et al. Effect of alumina buffers on the stability of top-gate amorphous ingazno thin-film transistors on flexible substrates. IEEE Electron Device Lett, 2015, 36(9): 917 doi: 10.1109/LED.2015.2461003
[47]
Jeong J K, Jin D U, Shin H S, et al. Flexible full-color AMOLED on ultrathin metal foil. IEEE Electron Device Lett, 2007, 28(5): 389 doi: 10.1109/LED.2007.895449
[48]
Sekitani T, Zschieschang U, Klauk H, et al. Flexible organic transistors and circuits with extreme bending stability. Nat Mater, 2010, 9(12): 1015 doi: 10.1038/nmat2896
[49]
Hwang B U, Kim D I, Cho S W, et al. Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors. Org Electron, 2014, 15(7): 1458 doi: 10.1016/j.orgel.2014.04.003
[50]
Münzenrieder N, Petti L, Zysset C, et al. Flexible self-aligned amorphous InGaZnO thin-film transistors with submicrometer channel length and a transit frequency of 135 MHz. IEEE Trans Electron Devices, 2013, 60(9): 2815 doi: 10.1109/TED.2013.2274575
[51]
Munzenrieder N, Voser P, Petti L, et al. Flexible self-aligned double-gate IGZO TFT. IEEE Electron Device Lett, 2014, 35(1): 69 doi: 10.1109/LED.2013.2286319
[52]
Park M J, Yun D J, Ryu M K, et al. Device characteristics comparisons for the InGaZnO thin film transistors fabricated on two-type surfaces of the plastic poly (ethylene naphthalate) substrates with hybrid barrier layers. J Vac Sci Technol B, 2015, 33(5): 051209 doi: 10.1116/1.4929414
[53]
Sheng J, Lee H J, Oh S, et al. Flexible and high-performance amorphous indium zinc oxide thin-film transistor using low-temperature atomic layer deposition. ACS Appl Mater Interf, 2016, 8(49): 33821 doi: 10.1021/acsami.6b11774
[54]
Sheng J, Park J, Choi D W, et al. A study on the electrical properties of atomic layer deposition grown InOx on flexible substrates with respect to N2O plasma treatment and the associated thin-film transistor behavior under repetitive mechanical stress. ACS Appl Mater Interf, 2016, 8(45): 31136 doi: 10.1021/acsami.6b11815
[55]
Lee H E, Kim S, Ko J, et al. Skin‐like oxide thin‐film transistors for transparent displays. Adv Funct Mater, 2016, 26(34): 6170
[56]
Li H U, Jackson T N. Flexibility testing strategies and apparatus for flexible electronics. IEEE Trans Electron Devices, 2016, 63(5): 1934 doi: 10.1109/TED.2016.2545706
[57]
Pyshkin S L, Ballato J. Optoelectronics: advanced materials and devices. Croatia: InTech Rijeka, 2013
[58]
Bak J Y, Yoon S M, Yang S, et al. Effect of In–Ga–Zn–O active layer channel composition on process temperature for flexible oxide thin-film transistors. J Vac Sci Technol B, 2012, 30(4): 041208 doi: 10.1116/1.4731257
[59]
Lin Y Y, Hsu C C, Tseng M H, et al. Stable and high-performance flexible ZnO thin-film transistors by atomic layer deposition. ACS Appl Mater Interf, 2015, 7(40): 22610 doi: 10.1021/acsami.5b07278
[60]
Nayak P K, Wang Z, Anjum D H, et al. Highly stable thin film transistors using multilayer channel structure. Appl Phys Lett, 2015, 106(10): 103505 doi: 10.1063/1.4914971
[61]
Chung Y J, Choi W J, Kang S G, et al. A study on the influence of local doping in atomic layer deposited Al:ZnO thin film transistors. J Mater Chem C, 2014, 2(43): 9274 doi: 10.1039/C4TC01727G
[62]
Kim J M, Nam T, Lim S, et al. Atomic layer deposition ZnO: N flexible thin film transistors and the effects of bending on device properties. Appl Phys Lett, 2011, 98(14): 142113 doi: 10.1063/1.3577607
[63]
Ahn C H, Hee Kim S, Gu Yun M, et al. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition. Appl Phys Lett, 2014, 105(22): 223513 doi: 10.1063/1.4901732
[64]
Cho S W, Yun M G, Ahn C H, et al. Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences. Electron Mater Lett, 2015, 11(2): 198 doi: 10.1007/s13391-014-4305-1
[65]
Geng Y, Yang W, Lu H L, et al. Mobility enhancement and OFF current suppression in atomic-layer-deposited ZnO thin-film transistors by post annealing in O2. IEEE Electron Device Lett, 2014, 35(12): 1266 doi: 10.1109/LED.2014.2365194
[66]
Ahn C H, Kim S H, Kim Y K, et al. Effect of post-annealing temperatures on thin-film transistors with ZnO/Al2O3 superlattice channels. Thin Solid Films, 2015, 584: 336 doi: 10.1016/j.tsf.2015.01.017
[67]
Lee S J, Hwang C S, Pi J E, et al. High performance amorphous multilayered ZnO–SnO2 heterostructure thin-film transistors: Fabrication and characteristics. ETRI J, 2015, 37(6): 1135 doi: 10.4218/etrij.15.0114.0743
[68]
Ahn B D, Choi D W, Choi C, et al. The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition. Appl Phys Lett, 2014, 105(9): 092103 doi: 10.1063/1.4895102
[69]
Kim J I, Hwan J K, Yoon J H, et al. Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface. Appl Phys Lett, 2011, 99(12): 122102 doi: 10.1063/1.3643054
[70]
Park J C, Kim S, Kim S, et al. Highly stable transparent amorphous oxide semiconductor thin‐film transistors having double‐stacked active layers. Adv Mater, 2010, 22(48): 5512 doi: 10.1002/adma.v22.48
[71]
Yang J, Park J K, Kim S, et al. Atomic‐layer‐deposited ZnO thin‐film transistors with various gate dielectrics. Phys Status Solidi A, 2012, 209(10): 2087 doi: 10.1002/pssa.v209.10
[72]
Weiher R, Ley R. Optical properties of indium oxide. J Appl Phys, 1966, 37(1): 299 doi: 10.1063/1.1707830
[73]
Kawazoe H, Ueda N, Un’no H, et al. Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantation. J Appl Phys, 1994, 76(12): 7935 doi: 10.1063/1.357904
[74]
Kumaresan Y, Pak Y, Lim N. Highly bendable In–Ga–ZnO thin film transistors by using a thermally stable organic dielectric layer. Sci Rep, 2016, 6: 37764 doi: 10.1038/srep37764
[75]
Petti L, Faber H, Münzenrieder N, et al. Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits. Appl Phys Lett, 2015, 106(9): 092105 doi: 10.1063/1.4914085
[76]
Cantarella G, Münzenrieder N, Petti L, et al. Flexible In–Ga–Zn–O thin-film transistors on elastomeric substrate bent to 2.3% strain. IEEE Electron Device Lett, 2015, 36(8): 781 doi: 10.1109/LED.2015.2442271
[77]
Petti L, Munzenrieder N, Salvatore G A, et al. Influence of mechanical bending on flexible InGaZnO-based ferroelectric memory TFTs. IEEE Trans Electron Devices, 2014, 61(4): 1085 doi: 10.1109/TED.2014.2304307
[78]
Jin D U, Kim T W, Koo H W, et al. In 47.1: Invited paper: highly robust flexible AMOLED display on plastic substrate with new structure. SID Symposium Digest of Technical Papers, 2010: 703
[79]
Münzenrieder N, Cherenack K, Tröster G. Testing of flexible InGaZnO-based thin-film transistors under mechanical strain. Eur Phys J Appl Phys, 2011, 55(2): 23904 doi: 10.1051/epjap/2011100416
[80]
Tripathi A K, Myny K, Hou B, et al. Electrical characterization of flexible InGaZnO transistors and 8-b transponder chip down to a bending radius of 2 mm. IEEE Trans Electron Devices, 2015, 62(12): 4063 doi: 10.1109/TED.2015.2494694
[81]
Kim Y H, Lee E, Um J G, et al. Highly robust neutral plane oxide TFTs withstanding 0.25 mm bending radius for stretchable electronics. Sci Rep, 2016, 6: 25734 doi: 10.1038/srep25734
[82]
Münzenrieder N, Kunigunde H C, et al. The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs. IEEE Trans Electron Devices, 2011, 58(7): 2041 doi: 10.1109/TED.2011.2143416
[83]
Li X, Billa M M, Mativenga M, et al. Highly robust flexible oxide thin-film transistors by bulk accumulation. IEEE Electron Device Lett, 2015, 36(8): 811 doi: 10.1109/LED.2015.2451005
[84]
Petti L, Münzenrieder N, Vogt C, et al. Metal oxide semiconductor thin-film transistors for flexible electronics. Appl Phys Rev, 2016, 3: 021303 doi: 10.1063/1.4953034
[85]
Billah M M, Hasan M M, Chowdhury M H, et al. Excellent mechanical bending stability of flexible a-IGZO TFT by dual gate dual sweep using TCAD simulation. Soc Inform Display, 2016, 47(1): 1155
[86]
Rockett A. The materials science of semiconductors. Springer Science & Business Media, 2007
[87]
Kohan A, Ceder G, Morgan D, et al. First-principles study of native point defects in ZnO. Phys Rev B, 2000, 61(22): 15019 doi: 10.1103/PhysRevB.61.15019
[88]
Look D C, Farlow G C, Reunchan P, et al. Evidence for native-defect donors in n-type ZnO. Phys Rev Lett, 2005, 95(22): 225502 doi: 10.1103/PhysRevLett.95.225502
[89]
Kim Y S, Park C. Rich variety of defects in ZnO via an attractive interaction between O vacancies and Zn interstitials: origin of n-type doping. Phys Rev Lett, 2009, 102(8): 086403 doi: 10.1103/PhysRevLett.102.086403
[90]
de Meux A d J, Pourtois G, Genoe J, et al. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects. J Phys D, 2015, 48(43): 435104 doi: 10.1088/0022-3727/48/43/435104
[91]
Hasan M M, Billah M M, Naik M N, et al. Bending stress induced performance change in plastic oxide thin-film transistor and recovery by annealing at 300 °C. IEEE Electron Device Lett, 2017, 38(8): 1035 doi: 10.1109/LED.2017.2718565
Fig. 1.  (Color online) Schematic diagram of general growth process of ALD.

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Fig. 2.  (Color online) (a) Schematic diagram of top-gate and bottom contact a-IGZO TFT, transfer characteristics with different buffer fabrication process (detailed fabrication process in supporting information) that (b) using water/ozone as reactant, (c) under NBTS (VG = −20 V, temperature = 60 °C and time = 3000 s) in air ambient (relative humidity, RH = 30%), (d) device density of states of near-conduction band for TFTs with different reactant and measured in RH 30% and vacuum.

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Fig. 3.  (Color online) (a) Structure of a-IGZO TFT fabricated on polyimide substrate with different buffer materials and stack structures (detail fabrication process in supporting information) and (b) relative transfer performance. (c) Schematic cross-sectional view of the fabricated a-IGZO TFT on a flexible PEN substrate with inorganic/organic buffer layer. (d) IDS–VGS transfer curves of organic and inorganic/organic buffer layer based TFTs[22, 43].

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Fig. 4.  (Color online) (a) Schematic illustration of the a-IGZO TFT on polyimide substrate with bottom gate and top contact structures (detail fabrication process in supporting information). (b) Strain and stress applied to thin Al2O3 layer in organic/inorganic hybrid gate dielectric with varying Al2O3 thicknesses. (c) Cross-sectional FIB/SEM images of the a-IGZO TFT with the PVP (400 nm)/Al2O3 (40 nm) hybrid gate dielectric after 105 bending cycles in tension mode. (d) Transfer characteristics of cyclically bent a-IGZO TFTs with PVP (400 nm)/Al2O3 (20 nm) hybrid gate dielectrics, PVP (400 nm)/Al2O3 (30 nm) hybrid gate dielectrics, and PVP (400 nm)/Al2O3 (40 nm) hybrid gate dielectrics[49]. (copyright 2014 Elsevier B.V.)

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Fig. 5.  (Color online) (a) Homogeneous laminated active layer deposited by ALD, (b) bi-layer, and (c) gradient active layer by ALD for oxide semiconductor TFTs[63–64] (detailed fabrication process in supplement information).

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Fig. 6.  (Color online) High performance flexible ALD oxide TFT with active layer as (a) InOx with N2O plasma post treatment (copyright 2016, American Chemical Society) and (b) IZO that in term of growth temperature dependence (copyright 2016, American Chemical Society)[53, 54].

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Fig. 7.  (Color online) (a) Flexible ALD InOx TFTs bending test over bending jig with different bending radius from 15 to 5 mm, (b) Example picture of the flexible TFT measurement with bending jig. (c) Evolution of the transfer performance of flexible IZO TFT fabricated on polyimide substrates as a function of bending cycles and strains[53, 54].

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Fig. 8.  (Color online) (a) a-IGZO TFT performance for different types of stress (tensile/compressive) on the 50 μm PI substrate, and (b) schematics of bent InOx TFTs for a bending axis vertical to (for case I) and parallel to (for case II) device current, and transfer characteristics of InOx TFTs under repeated bending cycles with different bending cases (copyright 2016, American Chemical Society)[54, 79].

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Table 1.   Summary of recent reports for ALD buffer layer based flexible oxide TFTs.

Substrate Buffer layer Method Active layer Mobility Strain/radius Bending cycle Ref.
PI SiOx, SiNx/Al2O3 PECVD/ALD IGZO 14.88 15 mm 10000 [22]
Polyethylene naphthalate Organic/Al2O3 ALD IGZO 15.5 3.3 mm 10000 [43]
PI SiNx/SiO2/Al2O3 ALD InOx 15 5 mm (0.4% tens.) 10000 [44]
PI Al2O3 ALD a-IGZO 12.5 2 mm [45]
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Table 2.   Transfer performance parameters comparison for device with different buffer layers[43].

Device Mobility (cm2/(V·s)) Threshold voltage (V) Subthreshold swing (V/dec) On/off ratio
No buffer 1.11 9.4 0.4 3.1 × 107
Organic buffer 14.4 2.8 0.4 1.5 × 109
Hybrid buffer 15.5 4.1 0.2 4.7 × 109
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Table 3.   Summary of recent reports for ALD gate insulator based flexible oxide TFTs.

Substrate Gate insulator Method Ative layer Mobility Strain/radius Bending cycle Ref.
PI Al2O3 ALD a-IGZO 7.5 3.5 mm [50]
PI PVP/Al2O3 ALD IGZO 8.39 10 mm 100000 [49]
PI Al2O3 ALD IGZO 10.5 6 mm [51]
Polyethylene naphthalate Al2O3 ALD IGZO 15.5 3 mm 10000 [52]
PI Al2O3 ALD IZO 42.1 2 mm 5000 [53]
PI Al2O3 ALD InOx 9.7 5 mm 10000 [54]
PET Al2O3 ALD IZO 40.1 7.5 mm 5000 [55]
PI Al2O3 ALD ZnO 1.75 mm (0.14% comp.) 90000 [56]
PI Al2O3 ALD InOx 15 5 mm (0.4% tens.) 10000 [44]
PI Al2O3 ALD a-IGZO 12.5 2 mm [45]
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Table 4.   Transfer performance parameters under mechanical stress by jig bars of different radius[54].

Bending radius (mm) Strain Vth (V) μsat (cm2/(V·s)) S.S. (V/decade) Hysteresis (V) ION/IOFF
0 0 −0.22 9.7 0.87 0.9 9.4 × 109
15 0.12% −0.49 8.77 0.96 1.23 4.6 × 109
10 0.18% −0.72 8.38 0.98 1.47 4.8 × 109
5 0.38% −1.46 8.09 0.97 1.87 4.8 × 109
DownLoad: CSV
[1]
Komatsu R, Nakazato R, Sasaki T, et al. Repeatedly foldable AMOLED display. J Soc Inform Display, 2015, 23(2): 41 doi: 10.1002/jsid.276
[2]
Nakajima Y, Takei T, Motomura G, et al. Flexible AMOLED display using an oxide-TFT backplane and inverted OLEDs. Photonics Conference (IPC), IEEE, 2014: 42
[3]
Choi M C, Kim Y, Ha C S. Polymers for flexible displays: From material selection to device applications. Prog Polym Sci, 2008, 33581
[4]
Heremans P, Tripathi A K, de Jamblinne de Meux A, et al. Mechanical and electronic properties of thin‐film transistors on plastic, and their integration in flexible electronic applications. Adv Mater, 2016, 28: 4266 doi: 10.1002/adma.v28.22
[5]
Street R A. Thin film transistors. Adv Mater, 2009, 21(20): 2007 doi: 10.1002/adma.v21:20
[6]
Powell M J. The physics of amorphous-silicon thin-film transistors. IEEE Trans Electron Devices, 1989, 36(12): 2753 doi: 10.1109/16.40933
[7]
Nathan A, Kumar A, Sakariya K, et al. Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic. IEEE J Solid-State Circuits, 2004, 39(9): 1477 doi: 10.1109/JSSC.2004.829373
[8]
Klauk H. Organic thin-film transistors. Chem Soc Rev, 2010, 39(7): 2643 doi: 10.1039/b909902f
[9]
Dimitrakopoulos C D, Malenfant P R. Organic thin film transistors for large area electronics. Adv Mater, 2002, 14(2): 99 doi: 10.1002/(ISSN)1521-4095
[10]
Matters M, De Leeuw D, Herwig P, et al. Bias-stress induced instability of organic thin film transistors. Synthetic Metals, 1999, 102(1–3): 998 doi: 10.1016/S0379-6779(98)01162-X
[11]
Gomes H L, Stallinga P, Dinelli F, et al. Bias-induced threshold voltages shifts in thin-film organic transistors. Appl Phys Lett, 2004, 84(16): 3184 doi: 10.1063/1.1713035
[12]
Powell M. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors. Appl Phys Lett, 1983, 43(6): 597 doi: 10.1063/1.94399
[13]
Theiss S, Wagner S. Amorphous silicon thin-film transistors on steel foil substrates. IEEE Electron Device Lett, 1996, 17(12): 578 doi: 10.1109/55.545776
[14]
Serikawa T, Omata F. High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films. IEEE Trans Electron Devices, 2002, 49(5): 820 doi: 10.1109/16.998590
[15]
Jeong J K. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays. Semicond Sci Technol, 2011, 26(3): 034008 doi: 10.1088/0268-1242/26/3/034008
[16]
Kenji N, Hiromichi O, Akihiro T, et al. Room-temperature fabrication of transparent f1 exible thin-film transistors using amorphous oxide semiconductors. Nature, 2004, 432: 488 doi: 10.1038/nature03090
[17]
Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors: a review of recent advances. Adv Mater, 2012, 24(22): 2945 doi: 10.1002/adma.v24.22
[18]
Xingwei D, Hao Z, He D, et al. Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator. Superlattices Microstruct, 2014, 76: 156 doi: 10.1016/j.spmi.2014.10.007
[19]
Kenji N, Hiromichi O, Kazushige U, et al. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science, 2003, 300: 1269 doi: 10.1126/science.1083212
[20]
Han D D, Zhang Y, Cong Y Y, et al. Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate. Sci Rep, 2016, 6: 38984 doi: 10.1038/srep38984
[21]
Choi M C, Kim Y, Ha C S. Polymers for flexible displays: from material selection to device applications. Prog Polym Sci, 2008, 33(6): 581 doi: 10.1016/j.progpolymsci.2007.11.004
[22]
Ok K C, Ko Park S H, Hwang C S, et al. The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates. Appl Phys Lett, 2014, 104(6): 063508 doi: 10.1063/1.4864617
[23]
Jeong J K, Jeong J H, Yang H W, et al. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Appl Phys Lett, 2007, 91(11): 113505 doi: 10.1063/1.2783961
[24]
Bayraktaroglu B, Leedy K, Neidhard R. Microwave ZnO thin-film transistors. IEEE Electron Device Lett, 2008, 29(9): 1024 doi: 10.1109/LED.2008.2001635
[25]
Mativenga M, Choi M H, Choi J W, et al. Transparent flexible circuits based on amorphous-indium–gallium–zinc–oxide thin-film transistors. IEEE Electron Device Lett, 2011, 32(2): 170 doi: 10.1109/LED.2010.2093504
[26]
Yang S, Bak J Y, Yoon S M, et al. Low-temperature processed flexible In–Ga–Zn–O thin-film transistors exhibiting high electrical performance. IEEE Electron Device Lett, 1692, 32(12): 1692
[27]
Johnson R W, Hultqvist A, Bent S F. A brief review of atomic layer deposition: from fundamentals to applications. Mater Today, 2014, 17(5): 236 doi: 10.1016/j.mattod.2014.04.026
[28]
Kim H, Maeng W J. Applications of atomic layer deposition to nanofabrication and emerging nanodevices. Thin Solid Films, 2009, 517(8): 2563 doi: 10.1016/j.tsf.2008.09.007
[29]
Seol Y, Noh H, Lee S, et al. Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors. Appl Phys Lett, 2008, 93(1): 244
[30]
Seol Y, Park J, Tien N, et al. Reduction of electrical hysteresis in cyclically bent organic field effect transistors by incorporating multistack hybrid gate dielectrics. J Electrochem Soc, 2010, 157(11): H1046 doi: 10.1149/1.3489944
[31]
Kim D, Hwang B, Park J, et al. Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors. Org Electron, 2012, 13(11): 2401 doi: 10.1016/j.orgel.2012.06.038
[32]
Carcia P, McLean R, Groner M, et al. Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition. J Appl Phys, 2009, 106(2): 023533 doi: 10.1063/1.3159639
[33]
Wu D S, Chen T N, Lay E, et al. Transparent barrier coatings on high temperature resisting polymer substrates for flexible electronic applications. J Electrochem Soc, 2010, 157(2): C47 doi: 10.1149/1.3261761
[34]
Sykes G F, St Clair A K. The effect of molecular structure on the gas transmission rates of aromatic polyimides. J Appl Polym Sci, 1986, 32(2): 3725 doi: 10.1002/app.1986.070320228
[35]
Park J S, Kim T W, Stryakhilev D, et al. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors. Appl Phys Lett, 2009, 95(1): 013503 doi: 10.1063/1.3159832
[36]
Hekmatshoar B, Kattamis A Z, Cherenack K H, et al. Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic. IEEE Electron Device Lett, 2008, 29(1): 63 doi: 10.1109/LED.2007.910800
[37]
Hsu H H, Chang C Y, Cheng C H. A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature. IEEE Electron Device Lett, 2013, 34(6): 768 doi: 10.1109/LED.2013.2258455
[38]
Kim Y H, Chung C H, Moon J, et al. Oxide-silicon-oxide buffer structure for ultralow temperature polycrystalline silicon thin-film transistor on plastic substrate. IEEE Electron Device Lett, 2006, 27(7): 579 doi: 10.1109/LED.2006.877713
[39]
Yun S J, Ko Y W, Lim J W. Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition. Appl Phys Lett, 2004, 85(21): 4896 doi: 10.1063/1.1826238
[40]
Ghosh A, Gerenser L, Jarman C, et al. Thin-film encapsulation of organic light-emitting devices. Appl Phys Lett, 2005, 86(22): 223503 doi: 10.1063/1.1929867
[41]
Murley D, French I, Deane S, et al. The effect of hydrogen dilution on the aminosilane plasma regime used to deposit nitrogen-rich amorphous silicon nitride. J Non-cryst Solids, 1996, 198: 1058
[42]
Smith D L, Alimonda A S, Chen C C, et al. Mechanism of SiNxHy deposition from NH3–SiH4 plasma. J Electrochem Soc, 1990, 137(2): 614 doi: 10.1149/1.2086517
[43]
Park M J, Yun D J, Ryu M K, et al. Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly (ethylene naphthalate) substrates. J Mater Chem C, 2015, 3(18): 4779 doi: 10.1039/C5TC00048C
[44]
Sheng J, Choi D W, Lee S H, et al. Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states. J Mater Chem C, 2016, 4(32): 7571 doi: 10.1039/C6TC01199C
[45]
Jeong H J, Han K L, Ok K C, et al. Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors. J Inform Display, 2017, 18: 87 doi: 10.1080/15980316.2017.1294116
[46]
Ok K C, Oh S, Jeong H J, et al. Effect of alumina buffers on the stability of top-gate amorphous ingazno thin-film transistors on flexible substrates. IEEE Electron Device Lett, 2015, 36(9): 917 doi: 10.1109/LED.2015.2461003
[47]
Jeong J K, Jin D U, Shin H S, et al. Flexible full-color AMOLED on ultrathin metal foil. IEEE Electron Device Lett, 2007, 28(5): 389 doi: 10.1109/LED.2007.895449
[48]
Sekitani T, Zschieschang U, Klauk H, et al. Flexible organic transistors and circuits with extreme bending stability. Nat Mater, 2010, 9(12): 1015 doi: 10.1038/nmat2896
[49]
Hwang B U, Kim D I, Cho S W, et al. Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors. Org Electron, 2014, 15(7): 1458 doi: 10.1016/j.orgel.2014.04.003
[50]
Münzenrieder N, Petti L, Zysset C, et al. Flexible self-aligned amorphous InGaZnO thin-film transistors with submicrometer channel length and a transit frequency of 135 MHz. IEEE Trans Electron Devices, 2013, 60(9): 2815 doi: 10.1109/TED.2013.2274575
[51]
Munzenrieder N, Voser P, Petti L, et al. Flexible self-aligned double-gate IGZO TFT. IEEE Electron Device Lett, 2014, 35(1): 69 doi: 10.1109/LED.2013.2286319
[52]
Park M J, Yun D J, Ryu M K, et al. Device characteristics comparisons for the InGaZnO thin film transistors fabricated on two-type surfaces of the plastic poly (ethylene naphthalate) substrates with hybrid barrier layers. J Vac Sci Technol B, 2015, 33(5): 051209 doi: 10.1116/1.4929414
[53]
Sheng J, Lee H J, Oh S, et al. Flexible and high-performance amorphous indium zinc oxide thin-film transistor using low-temperature atomic layer deposition. ACS Appl Mater Interf, 2016, 8(49): 33821 doi: 10.1021/acsami.6b11774
[54]
Sheng J, Park J, Choi D W, et al. A study on the electrical properties of atomic layer deposition grown InOx on flexible substrates with respect to N2O plasma treatment and the associated thin-film transistor behavior under repetitive mechanical stress. ACS Appl Mater Interf, 2016, 8(45): 31136 doi: 10.1021/acsami.6b11815
[55]
Lee H E, Kim S, Ko J, et al. Skin‐like oxide thin‐film transistors for transparent displays. Adv Funct Mater, 2016, 26(34): 6170
[56]
Li H U, Jackson T N. Flexibility testing strategies and apparatus for flexible electronics. IEEE Trans Electron Devices, 2016, 63(5): 1934 doi: 10.1109/TED.2016.2545706
[57]
Pyshkin S L, Ballato J. Optoelectronics: advanced materials and devices. Croatia: InTech Rijeka, 2013
[58]
Bak J Y, Yoon S M, Yang S, et al. Effect of In–Ga–Zn–O active layer channel composition on process temperature for flexible oxide thin-film transistors. J Vac Sci Technol B, 2012, 30(4): 041208 doi: 10.1116/1.4731257
[59]
Lin Y Y, Hsu C C, Tseng M H, et al. Stable and high-performance flexible ZnO thin-film transistors by atomic layer deposition. ACS Appl Mater Interf, 2015, 7(40): 22610 doi: 10.1021/acsami.5b07278
[60]
Nayak P K, Wang Z, Anjum D H, et al. Highly stable thin film transistors using multilayer channel structure. Appl Phys Lett, 2015, 106(10): 103505 doi: 10.1063/1.4914971
[61]
Chung Y J, Choi W J, Kang S G, et al. A study on the influence of local doping in atomic layer deposited Al:ZnO thin film transistors. J Mater Chem C, 2014, 2(43): 9274 doi: 10.1039/C4TC01727G
[62]
Kim J M, Nam T, Lim S, et al. Atomic layer deposition ZnO: N flexible thin film transistors and the effects of bending on device properties. Appl Phys Lett, 2011, 98(14): 142113 doi: 10.1063/1.3577607
[63]
Ahn C H, Hee Kim S, Gu Yun M, et al. Design of step composition gradient thin film transistor channel layers grown by atomic layer deposition. Appl Phys Lett, 2014, 105(22): 223513 doi: 10.1063/1.4901732
[64]
Cho S W, Yun M G, Ahn C H, et al. Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences. Electron Mater Lett, 2015, 11(2): 198 doi: 10.1007/s13391-014-4305-1
[65]
Geng Y, Yang W, Lu H L, et al. Mobility enhancement and OFF current suppression in atomic-layer-deposited ZnO thin-film transistors by post annealing in O2. IEEE Electron Device Lett, 2014, 35(12): 1266 doi: 10.1109/LED.2014.2365194
[66]
Ahn C H, Kim S H, Kim Y K, et al. Effect of post-annealing temperatures on thin-film transistors with ZnO/Al2O3 superlattice channels. Thin Solid Films, 2015, 584: 336 doi: 10.1016/j.tsf.2015.01.017
[67]
Lee S J, Hwang C S, Pi J E, et al. High performance amorphous multilayered ZnO–SnO2 heterostructure thin-film transistors: Fabrication and characteristics. ETRI J, 2015, 37(6): 1135 doi: 10.4218/etrij.15.0114.0743
[68]
Ahn B D, Choi D W, Choi C, et al. The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition. Appl Phys Lett, 2014, 105(9): 092103 doi: 10.1063/1.4895102
[69]
Kim J I, Hwan J K, Yoon J H, et al. Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface. Appl Phys Lett, 2011, 99(12): 122102 doi: 10.1063/1.3643054
[70]
Park J C, Kim S, Kim S, et al. Highly stable transparent amorphous oxide semiconductor thin‐film transistors having double‐stacked active layers. Adv Mater, 2010, 22(48): 5512 doi: 10.1002/adma.v22.48
[71]
Yang J, Park J K, Kim S, et al. Atomic‐layer‐deposited ZnO thin‐film transistors with various gate dielectrics. Phys Status Solidi A, 2012, 209(10): 2087 doi: 10.1002/pssa.v209.10
[72]
Weiher R, Ley R. Optical properties of indium oxide. J Appl Phys, 1966, 37(1): 299 doi: 10.1063/1.1707830
[73]
Kawazoe H, Ueda N, Un’no H, et al. Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantation. J Appl Phys, 1994, 76(12): 7935 doi: 10.1063/1.357904
[74]
Kumaresan Y, Pak Y, Lim N. Highly bendable In–Ga–ZnO thin film transistors by using a thermally stable organic dielectric layer. Sci Rep, 2016, 6: 37764 doi: 10.1038/srep37764
[75]
Petti L, Faber H, Münzenrieder N, et al. Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits. Appl Phys Lett, 2015, 106(9): 092105 doi: 10.1063/1.4914085
[76]
Cantarella G, Münzenrieder N, Petti L, et al. Flexible In–Ga–Zn–O thin-film transistors on elastomeric substrate bent to 2.3% strain. IEEE Electron Device Lett, 2015, 36(8): 781 doi: 10.1109/LED.2015.2442271
[77]
Petti L, Munzenrieder N, Salvatore G A, et al. Influence of mechanical bending on flexible InGaZnO-based ferroelectric memory TFTs. IEEE Trans Electron Devices, 2014, 61(4): 1085 doi: 10.1109/TED.2014.2304307
[78]
Jin D U, Kim T W, Koo H W, et al. In 47.1: Invited paper: highly robust flexible AMOLED display on plastic substrate with new structure. SID Symposium Digest of Technical Papers, 2010: 703
[79]
Münzenrieder N, Cherenack K, Tröster G. Testing of flexible InGaZnO-based thin-film transistors under mechanical strain. Eur Phys J Appl Phys, 2011, 55(2): 23904 doi: 10.1051/epjap/2011100416
[80]
Tripathi A K, Myny K, Hou B, et al. Electrical characterization of flexible InGaZnO transistors and 8-b transponder chip down to a bending radius of 2 mm. IEEE Trans Electron Devices, 2015, 62(12): 4063 doi: 10.1109/TED.2015.2494694
[81]
Kim Y H, Lee E, Um J G, et al. Highly robust neutral plane oxide TFTs withstanding 0.25 mm bending radius for stretchable electronics. Sci Rep, 2016, 6: 25734 doi: 10.1038/srep25734
[82]
Münzenrieder N, Kunigunde H C, et al. The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs. IEEE Trans Electron Devices, 2011, 58(7): 2041 doi: 10.1109/TED.2011.2143416
[83]
Li X, Billa M M, Mativenga M, et al. Highly robust flexible oxide thin-film transistors by bulk accumulation. IEEE Electron Device Lett, 2015, 36(8): 811 doi: 10.1109/LED.2015.2451005
[84]
Petti L, Münzenrieder N, Vogt C, et al. Metal oxide semiconductor thin-film transistors for flexible electronics. Appl Phys Rev, 2016, 3: 021303 doi: 10.1063/1.4953034
[85]
Billah M M, Hasan M M, Chowdhury M H, et al. Excellent mechanical bending stability of flexible a-IGZO TFT by dual gate dual sweep using TCAD simulation. Soc Inform Display, 2016, 47(1): 1155
[86]
Rockett A. The materials science of semiconductors. Springer Science & Business Media, 2007
[87]
Kohan A, Ceder G, Morgan D, et al. First-principles study of native point defects in ZnO. Phys Rev B, 2000, 61(22): 15019 doi: 10.1103/PhysRevB.61.15019
[88]
Look D C, Farlow G C, Reunchan P, et al. Evidence for native-defect donors in n-type ZnO. Phys Rev Lett, 2005, 95(22): 225502 doi: 10.1103/PhysRevLett.95.225502
[89]
Kim Y S, Park C. Rich variety of defects in ZnO via an attractive interaction between O vacancies and Zn interstitials: origin of n-type doping. Phys Rev Lett, 2009, 102(8): 086403 doi: 10.1103/PhysRevLett.102.086403
[90]
de Meux A d J, Pourtois G, Genoe J, et al. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects. J Phys D, 2015, 48(43): 435104 doi: 10.1088/0022-3727/48/43/435104
[91]
Hasan M M, Billah M M, Naik M N, et al. Bending stress induced performance change in plastic oxide thin-film transistor and recovery by annealing at 300 °C. IEEE Electron Device Lett, 2017, 38(8): 1035 doi: 10.1109/LED.2017.2718565

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    Received: 12 October 2017 Revised: 18 November 2017 Online: Accepted Manuscript: 27 December 2017Published: 01 January 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(1): 011008
      Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi, Jin-Seong Park. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J]. Journal of Semiconductors, 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008 ****J Z Sheng, K Han, T Hong, W Choi, J Park, Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J]. J. Semicond., 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008.
      Citation:
      Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi, Jin-Seong Park. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J]. Journal of Semiconductors, 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008 ****
      J Z Sheng, K Han, T Hong, W Choi, J Park, Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J]. J. Semicond., 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008.
      shu

      Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

      DOI: 10.1088/1674-4926/39/1/011008

      • Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea

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      Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium.

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      • Corresponding author: Prof. Jin-Seong Park ( jsparklime@hanyang.ac.kr)
      • Received Date: 2017-10-12
      • Revised Date: 2017-11-18
      • Published Date: 2018-01-01

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