Fig. 1.
(Color online) CdS single crystal with size of Φ55 × 15 mm2.
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| Citation: |
Xiaoqing Huo, Huaqing Si, Kun Zhao, Yingwu Zhang, Hongjuan Cheng, Yongkuan Xu. High infrared transmittance CdS single crystal grown by physical vapor transport[J]. Journal of Semiconductors, 2018, 39(12): 123003. doi: 10.1088/1674-4926/39/12/123003
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X Q Huo, H Q Si, K Zhao, Y W Zhang, H J Cheng, Y K Xu, High infrared transmittance CdS single crystal grown by physical vapor transport[J]. J. Semicond., 2018, 39(12): 123003. doi: 10.1088/1674-4926/39/12/123003.
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High infrared transmittance CdS single crystal grown by physical vapor transport
DOI: 10.1088/1674-4926/39/12/123003
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Abstract
Φ55 × 15 mm2 CdS bulk single crystal with high infrared transmittance was grown by physical vapor transport. The single crystal has a consistent structure from top to bottom, which was confirmed by X-ray diffraction. The (002) full-width at half-maximum of the X-ray diffraction was measured to be 60.00 arcsec, indicating a good quality of the structure. Hall mobility, specific resistivity, and carrier concentration for the top and bottom of the crystal were observed as well. Transmittance for the CdS single crystal was measured to be higher than 70% from 2.5 to 4.5 µm, making the single crystal an important candidate for infrared window materials. Furthermore, the absorption mechanism of the CdS single crystal was analyzed. -
References
[1] Hu L F, Yan J, Kim Y, et al. Cathodoluminescence and photoconductive characteristics of single-crystal ternary CdS/CdSe/CdS biaxial nanobelts. Small, 2015, 11(13): 1531 doi: 10.1002/smll.v11.13[2] Kobiakov I B. Elastic, piezoelectric and dielectric properties of ZnO and CdS single crystals in a wide range of temperatures. Solid State Commun, 1980, 35: 305[3] Doña J M, Herrero J. Deposition of electro-optical properties on the deposition conditions of chemical bath deposition CdS thin film. J Electrochem Soc, 1997, 144(11): 4091 doi: 10.1149/1.1838141[4] Sorokin E, Klimentov D, Frolov M P, et al. Continuous-wave broadly tunable high-power Cr:CdS laser. Appl Phys B, 2014, 117: 1009 doi: 10.1007/s00340-014-5921-z[5] Kozlovsky V I, Akimov V A, Frolov M P, et al. Room-temperature tunable midinfrared lasers on transition-metal doped II-VI compound crystals grown from vapor phase. Phys Status Solidi B, 2010, 247(6): 1553 doi: 10.1002/pssb.v247:6[6] Akimov V A, Frolov M P, Korostelin Y V, et al. Vapor growth of CdSe:Cr and CdS:Cr single crystals for mid-infrared lasers. Opt Mater, 2009, 31: 1888 doi: 10.1016/j.optmat.2008.12.019[7] Russell G J, Thompson N F, Woods J. The incidence of voids in vapour grown CdS crystals. J Cryst Growth, 1985, 71: 621 doi: 10.1016/0022-0248(85)90370-7[8] Jeong T S, Lee C I, Yu P Y, et al. Growth of cadmium sulfide single crystal by the sublimation method. J Cryst Growth, 1995, 155: 32 doi: 10.1016/0022-0248(95)00142-5[9] Chen K T, Zhang Y, Egarievwe S U, et al. Post-growth annealing of CdS crystals grown by physical vapor transport. J Cryst Growth, 1996, 166: 731 doi: 10.1016/0022-0248(95)00513-7[10] Faktor M M, Garrett I. Growth of crystals from the vapour. Halsted Press, 1974[11] Sankar N, Sanjeeviraja C, Ramachandran K. Growth and characterization of CdS and doped CdS single crystals. J Cryst Growth, 2002, 243: 117 doi: 10.1016/S0022-0248(02)01488-4[12] Hong K J, Jeong T S, Yoon C J, et al. The optical properties of CdS crystal grown by the sublimation method. J Cryst Growth, 2000, 218: 19 doi: 10.1016/S0022-0248(00)00491-7[13] Cheng H J, Xu Y K, Yang W, et al. Growth of CdS crystals by the physical vapor transport methed. J Semiconduct, 2009, 30(10): 103002 doi: 10.1088/1674-4926/30/10/103002[14] Davydov A A, Ermolov V N, Neustroev S V, et al. Vapor phase growth of oriented CdS and CdSe single crystals of diameters up 100 mm. Neorg Mater, 1992, 28: 42[15] http://www.niimv.ru/en/.[16] Becker U, Rudolph P, Boyn R, et al. Characterization of p-type CdTe Bridgman crystals by infrared extinction spectra. Phys Stat Sol A, 1990, 120: 653 doi: 10.1002/(ISSN)1521-396X[17] Sen S, Rhiger D R, Curtis C R, et al. Infrared absorption behavior in CdZnTe substrates. J Electron Mater, 2001, 30(6): 611 doi: 10.1007/BF02665843[18] Yadava R D S, Sundersheshu B S, Anandan M, et al. Precipitation in CdTe crystals studied through mie scattering. J Electron Mater, 1994, 23(12): 1349 doi: 10.1007/BF02649901[19] He C J, Chen H B, Wang J M, et al. Optical transmission and dispersion of 0.25Pb(In1/2Nb1/2)O3–(0.75–x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 single crystals. J Appl Phys, 2015, 117: 164104 doi: 10.1063/1.4919717[20] Jensen B. Free carrier absorption in n-type CdTe. J Phys Chem Solids, 1973, 34: 2235 doi: 10.1016/S0022-3697(73)80072-1 -
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