Hongtao Lin. Mid-infrared lasers on silicon operating close to room temperature[J]. Journal of Semiconductors, 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202 ****H T Lin, Mid-infrared lasers on silicon operating close to room temperature[J]. J. Semicond., 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202.
Citation:
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Hongtao Lin. Mid-infrared lasers on silicon operating close to room temperature[J]. Journal of Semiconductors, 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202
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H T Lin, Mid-infrared lasers on silicon operating close to room temperature[J]. J. Semicond., 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202.
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Hongtao Lin. Mid-infrared lasers on silicon operating close to room temperature[J]. Journal of Semiconductors, 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202 ****H T Lin, Mid-infrared lasers on silicon operating close to room temperature[J]. J. Semicond., 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202.
Citation:
|
Hongtao Lin. Mid-infrared lasers on silicon operating close to room temperature[J]. Journal of Semiconductors, 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202
****
H T Lin, Mid-infrared lasers on silicon operating close to room temperature[J]. J. Semicond., 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202.
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