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Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward

Xinlun Cai

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 Corresponding author: Xinlun Cai, caixlun5@mail.sysu.edu.cn

DOI: 10.1088/1674-4926/40/10/100301

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    Received: Revised: Online: Accepted Manuscript: 19 September 2019Published: 01 October 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(10): 100301
      Xinlun Cai. Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward[J]. Journal of Semiconductors, 2019, 40(10): 100301. doi: 10.1088/1674-4926/40/10/100301 ****X L Cai, Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward[J]. J. Semicond., 2019, 40(10): 100301. doi: 10.1088/1674-4926/40/10/100301.
      Citation:
      Xinlun Cai. Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward[J]. Journal of Semiconductors, 2019, 40(10): 100301. doi: 10.1088/1674-4926/40/10/100301 ****
      X L Cai, Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward[J]. J. Semicond., 2019, 40(10): 100301. doi: 10.1088/1674-4926/40/10/100301.
      shu

      Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward

      DOI: 10.1088/1674-4926/40/10/100301

      • State Key Laboratory of Optoelectronic Materials and Technologies and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510000, China

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      • Xinlun Cai received his PhD in Bristol University in U.K. in 2012, where he worked on design and fabrication of semiconductor ring lasers and silicon photonic devices for spatial division multiplexing. From 2012 to 2014, he worked as a postdoc in Bristol University for silicon quantum photonic devices. From 2014 to present, he worked as a full professor in Sun Yat-sen Univerisity.caixlun5@mail.sysu.edu.cn
      • Corresponding author: caixlun5@mail.sysu.edu.cn
      • Published Date: 2019-10-01

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