J. Semicond. > 2019, Volume 40 > Issue 10 > 102301
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Size effect on optical performance of blue light-emitting diodes

Chang Ge1, 2, Jing Li1, 2, , Guohong Wang1, 2, 3, Kang Su1, 2 and Xingdong Lu1, 2

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 Corresponding author: Jing Li, Email: lijing2006@semi.ac.cn

DOI: 10.1088/1674-4926/40/10/102301

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Abstract: In this paper, size effects on optical performance of blue light-emitting diodes (LEDs) are investigated. The essential physical mechanism is studied by fabricating LEDs with various sizes of the active area and testing optical characteristics. It is found that micro-LEDs have better light extracting efficiency and thermal dissipation compared with broad-area LEDs, which is likely due to the small ratio of perimeter and active area. Furthermore, micro-LEDs are more beneficial for displays due to the stable wavelength under the low pulse width modulation (PWM) current density.

Key words: micro-LED, size dependence, light extract efficiency, strain relaxation



[1]
Jin S X, Li J, Li J Z, et al. GaN microdisk light emitting diodes. Appl Phys Lett, 2000, 76(5), 631 doi: 10.1063/1.125841
[2]
Jeon C W, Choi H W, Edwards P R, et al. 64 × 64 matrix-addressable arrays of GaN-based micro-LEDs. Lasers & Electro-optics Society, Leos, the Meeting of the IEEE, 2002
[3]
Akhter M. A LED micro-display with 90 × 90 pixels on a 80 μm pitch. Microelectronics Packaging Conference, 2016
[4]
Tian P, Mckendry J J D, Gong Z, et al. Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. J Appl Phys, 2014, 115(3), 033112 doi: 10.1063/1.4862298
[5]
Gong Z, Gu E, Jin S R, et al. Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: promising candidates for micro-displays and colour conversion. J Phys D, 2008, 41(9), 094002 doi: 10.1088/0022-3727/41/9/094002
[6]
Kang C M, Kong D J, Shim J P, et al. Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display. Opt Express, 2017, 25(3), 2489 doi: 10.1364/OE.25.002489
[7]
Choi H W, Jeon C W, Dawson M D, et al. Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technol Lett, 2003, 15(4), 510 doi: 10.1109/LPT.2003.809257
[8]
Gong Z, Jin S, Chen Y, et al. Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes. J Appl Phys, 2010, 107(1), 013103 doi: 10.1063/1.3276156
[9]
Tao Y B, Wang S Y, Chen Z Z, et al. Size effect on efficiency droop of blue light emitting diode. Physica Status Solidi C, 2012, 9(3/4), 616 doi: 10.1002/pssc.201100483
[10]
Dai L, Zhang N, Lin J Y, et al. Comparison of optical transitions in InGaN quantum well structures and microdisks. J Appl Phys, 2001, 89, 4951 doi: 10.1063/1.1355280
[11]
Demangeot F, Gleize J, Frandon J, et al. Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching. J Appl Phys, 2002, 91(10), 6520 doi: 10.1063/1.1468908
[12]
Jin S X, Shakya J, Lin J Y, et al. Size dependence of III-nitride microdisk light-emitting diode characteristics. Appl Phys Lett, 2001, 78(22), 3532 doi: 10.1063/1.1376152
[13]
Lu H M, Chen G X. Influence of polarization effect on optoelectronic properties of InGaN/GaN multiple quantum well. Chin J Lumin, 2011, 32(3), 266 doi: 10.3788/fgxb20113203.0266
[14]
Arnaudov B, Domanevskii D S, Evtimova S, et al. Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. Microelectron J, 2009, 40(2), 346 doi: 10.1016/j.mejo.2008.07.064
[15]
Ryou J H, Yoder P D, Liu J, et al. Control of quantum-confined stark effect in ingan-based quantum wells. IEEE J Sel Top Quantum Electron, 2009, 15(4), 1080 doi: 10.1109/JSTQE.2009.2014170
[16]
Cho J, Sone C, Park Y, et al. Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift. Phys Status Solidi A, 2005, 202, 1869 doi: 10.1002/pssa.200520041
[17]
Senawiratne J, Chatterjee A, Detchprohm T, et al. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes. Thin Solid Films, 2010, 518, 1732 doi: 10.1016/j.tsf.2009.11.073
[18]
Schubert E F, Miller J N. Light-emitting diodes. New York: Cambridge University Press, 2006, 87
Fig. 1.  (Color online) Optical micrograph of LEDs. The sizes of active area range from 20 to 120 μm.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) J–V characteristics of micro-LEDs with different sizes.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) Normalized EQE vary with forward current density of micro-LEDs with different sizes.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) Normalized EQE vary with chip size at 100, 300, and 500A/cm2.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) (a) Peak wavelength and (b) change of peak wavelength vary with forward current density of micro-LEDs with different sizes.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) Full width at half maximum (FWHM) varying with forward current of micro-LEDs with different sizes.

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) Current density dependence of Δλd driven by PWM at (a) 500 and (b) 100 A/cm2 of micro LEDs with different sizes.

DownLoad: Full-Size Img PowerPoint

Table 1.   The geometric parameters of LEDs.

D (μm)S (μm2)L/SLE/S
204000.20.351
309000.130.322
4016000.10.172
6036000.0670.168
8064000.050.601
100100000.040.382
120144000.0330.267
DownLoad: CSV
[1]
Jin S X, Li J, Li J Z, et al. GaN microdisk light emitting diodes. Appl Phys Lett, 2000, 76(5), 631 doi: 10.1063/1.125841
[2]
Jeon C W, Choi H W, Edwards P R, et al. 64 × 64 matrix-addressable arrays of GaN-based micro-LEDs. Lasers & Electro-optics Society, Leos, the Meeting of the IEEE, 2002
[3]
Akhter M. A LED micro-display with 90 × 90 pixels on a 80 μm pitch. Microelectronics Packaging Conference, 2016
[4]
Tian P, Mckendry J J D, Gong Z, et al. Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. J Appl Phys, 2014, 115(3), 033112 doi: 10.1063/1.4862298
[5]
Gong Z, Gu E, Jin S R, et al. Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: promising candidates for micro-displays and colour conversion. J Phys D, 2008, 41(9), 094002 doi: 10.1088/0022-3727/41/9/094002
[6]
Kang C M, Kong D J, Shim J P, et al. Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display. Opt Express, 2017, 25(3), 2489 doi: 10.1364/OE.25.002489
[7]
Choi H W, Jeon C W, Dawson M D, et al. Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technol Lett, 2003, 15(4), 510 doi: 10.1109/LPT.2003.809257
[8]
Gong Z, Jin S, Chen Y, et al. Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes. J Appl Phys, 2010, 107(1), 013103 doi: 10.1063/1.3276156
[9]
Tao Y B, Wang S Y, Chen Z Z, et al. Size effect on efficiency droop of blue light emitting diode. Physica Status Solidi C, 2012, 9(3/4), 616 doi: 10.1002/pssc.201100483
[10]
Dai L, Zhang N, Lin J Y, et al. Comparison of optical transitions in InGaN quantum well structures and microdisks. J Appl Phys, 2001, 89, 4951 doi: 10.1063/1.1355280
[11]
Demangeot F, Gleize J, Frandon J, et al. Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching. J Appl Phys, 2002, 91(10), 6520 doi: 10.1063/1.1468908
[12]
Jin S X, Shakya J, Lin J Y, et al. Size dependence of III-nitride microdisk light-emitting diode characteristics. Appl Phys Lett, 2001, 78(22), 3532 doi: 10.1063/1.1376152
[13]
Lu H M, Chen G X. Influence of polarization effect on optoelectronic properties of InGaN/GaN multiple quantum well. Chin J Lumin, 2011, 32(3), 266 doi: 10.3788/fgxb20113203.0266
[14]
Arnaudov B, Domanevskii D S, Evtimova S, et al. Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. Microelectron J, 2009, 40(2), 346 doi: 10.1016/j.mejo.2008.07.064
[15]
Ryou J H, Yoder P D, Liu J, et al. Control of quantum-confined stark effect in ingan-based quantum wells. IEEE J Sel Top Quantum Electron, 2009, 15(4), 1080 doi: 10.1109/JSTQE.2009.2014170
[16]
Cho J, Sone C, Park Y, et al. Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift. Phys Status Solidi A, 2005, 202, 1869 doi: 10.1002/pssa.200520041
[17]
Senawiratne J, Chatterjee A, Detchprohm T, et al. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes. Thin Solid Films, 2010, 518, 1732 doi: 10.1016/j.tsf.2009.11.073
[18]
Schubert E F, Miller J N. Light-emitting diodes. New York: Cambridge University Press, 2006, 87

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    Received: 20 March 2019 Revised: 31 May 2019 Online: Accepted Manuscript: 03 September 2019Uncorrected proof: 03 September 2019Published: 01 October 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(10): 102301
      Chang Ge, Jing Li, Guohong Wang, Kang Su, Xingdong Lu. Size effect on optical performance of blue light-emitting diodes[J]. Journal of Semiconductors, 2019, 40(10): 102301. doi: 10.1088/1674-4926/40/10/102301 ****C Ge, J Li, G H Wang, K Su, X D Lu, Size effect on optical performance of blue light-emitting diodes[J]. J. Semicond., 2019, 40(10): 102301. doi: 10.1088/1674-4926/40/10/102301.
      Citation:
      Chang Ge, Jing Li, Guohong Wang, Kang Su, Xingdong Lu. Size effect on optical performance of blue light-emitting diodes[J]. Journal of Semiconductors, 2019, 40(10): 102301. doi: 10.1088/1674-4926/40/10/102301 ****
      C Ge, J Li, G H Wang, K Su, X D Lu, Size effect on optical performance of blue light-emitting diodes[J]. J. Semicond., 2019, 40(10): 102301. doi: 10.1088/1674-4926/40/10/102301.
      shu

      Size effect on optical performance of blue light-emitting diodes

      DOI: 10.1088/1674-4926/40/10/102301
      • 1.

        Research and Development Center for Solid State Lighting, Institute of Semiconductor, Chinese Academy of Science, Beijing 100083, China

      • 2.

        Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China

      • 3.

        Yangzhou Zhongke Semiconductor Lighting Co. LTD, Yangzhou 225131, China

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      • Corresponding author: Email: lijing2006@semi.ac.cn
      • Received Date: 2019-03-20
      • Revised Date: 2019-05-31
      • Published Date: 2019-10-01

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