Fig. 1.
(Color online) Simplified capacitive models.
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| Citation: |
Hong Guan, Hao Sun, Junlin Bao, Zhipeng Wang, Shuguang Zhou, Hongwei Zhu. High-performance RF Switch in 0.13 μm RF SOI process[J]. Journal of Semiconductors, 2019, 40(2): 022401. doi: 10.1088/1674-4926/40/2/022401
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H Guan, H Sun, J L Bao, Z P Wang, S G Zhou, H W Zhu, High-performance RF Switch in 0.13 μm RF SOI process[J]. J. Semicond., 2019, 40(2): 022401. doi: 10.1088/1674-4926/40/2/022401.
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High-performance RF Switch in 0.13 μm RF SOI process
DOI: 10.1088/1674-4926/40/2/022401
More Information
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Abstract
A high-performance single-pole single-throw (SPST) RF switch for mobile phone RF front-end modules (FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator (PD SOI) process. In this paper, the traditional series-shunt configuration design was improved by introducing a suitably large DC bias resistor and leakage-preventing PMOS, together with the floating body technique. The performance of the RF switch is greatly improved. Furthermore, a new Ron × Coff testing method is also proposed. The size of this SPST RF switch is 0.2 mm2. This switch can be widely used for present 4G and forthcoming 5G mobile phone FEMs.-
Keywords:
- RF switch,
- SOI,
- insertion loss,
- isolation,
- linearity
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References
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