J. Semicond. > 2019, Volume 40 > Issue 4 > 040202
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Signatures of moire excitons

Ping-Heng Tan

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 Corresponding author: Institute of Semiconductors, CAS, Beijing, China

DOI: 10.1088/1674-4926/40/4/040202

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    Received: Revised: Online: Published: 08 April 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(4): 040202
      Ping-Heng Tan. Signatures of moire excitons[J]. Journal of Semiconductors, 2019, 40(4): 040202. doi: 10.1088/1674-4926/40/4/040202 ****P H Tan. Signatures of moire excitons[J]. J. Semicond., 2019, 40(4): 040202. doi: 10.1088/1674-4926/40/4/040202.
      Citation:
      Ping-Heng Tan. Signatures of moire excitons[J]. Journal of Semiconductors, 2019, 40(4): 040202. doi: 10.1088/1674-4926/40/4/040202 ****
      P H Tan. Signatures of moire excitons[J]. J. Semicond., 2019, 40(4): 040202. doi: 10.1088/1674-4926/40/4/040202.
      shu

      Signatures of moire excitons

      DOI: 10.1088/1674-4926/40/4/040202
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      • Corresponding author: Institute of Semiconductors, CAS, Beijing, China
      • Published Date: 2019-04-01

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