J. Semicond. > 2019, Volume 40 > Issue 4 > 040203
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Rational molecular passivation for high-performance perovskite light-emitting diodes

Jingbi You

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 Corresponding author: Institute of Semiconductors, CAS, Beijing, China

DOI: 10.1088/1674-4926/40/4/040203

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    Received: Revised: Online: Published: 08 April 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(4): 040203
      Jingbi You. Rational molecular passivation for high-performance perovskite light-emitting diodes[J]. Journal of Semiconductors, 2019, 40(4): 040203. doi: 10.1088/1674-4926/40/4/040203 ****J B You . Rational molecular passivation for high-performance perovskite light-emitting diodes[J]. J. Semicond., 2019, 40(4): 040203. doi: 10.1088/1674-4926/40/4/040203.
      Citation:
      Jingbi You. Rational molecular passivation for high-performance perovskite light-emitting diodes[J]. Journal of Semiconductors, 2019, 40(4): 040203. doi: 10.1088/1674-4926/40/4/040203 ****
      J B You . Rational molecular passivation for high-performance perovskite light-emitting diodes[J]. J. Semicond., 2019, 40(4): 040203. doi: 10.1088/1674-4926/40/4/040203.
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      Rational molecular passivation for high-performance perovskite light-emitting diodes

      DOI: 10.1088/1674-4926/40/4/040203
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      • Corresponding author: Institute of Semiconductors, CAS, Beijing, China
      • Published Date: 2019-04-01

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