Fig. 1.
(Color online) (a) The device structure of the n-channel GNR-TFET. (b) The conduction band of the GNR-TFET after self-consistency achieved.
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Endi Suhendi, Lilik Hasanah, Dadi Rusdiana, Fatimah A. Noor, Neny Kurniasih, Khairurrijal. Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger's equation[J]. Journal of Semiconductors, 2019, 40(6): 062002. doi: 10.1088/1674-4926/40/6/062002
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E Suhendi, L Hasanah, D Rusdiana, F A Noor, N Kurniasih, Khairurrijal, Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger\'s equation[J]. J. Semicond., 2019, 40(6): 062002. doi: 10.1088/1674-4926/40/6/062002.
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Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger's equation
DOI: 10.1088/1674-4926/40/6/062002
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Abstract
The tunneling current in a graphene nanoribbon tunnel field effect transistor (GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrödinger's equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method (TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrödinger's equation. -
References
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