4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P<sup>+</sup> shielding region

Xiaorong Luo; Ke Zhang; Xu Song; Jian Fang; Fei Yang; Bo Zhang

doi:10.1088/1674-4926/41/10/102801

J. Semicond. > 2020, Volume 41 > Issue 10 > 102801

ARTICLES

4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P⁺ shielding region

Xiaorong Luo^1,, Ke Zhang¹, Xu Song¹, Jian Fang¹, Fei Yang² and Bo Zhang¹

+ Author Affiliations

Corresponding author: Xiaorong Luo, Email: xrluo@uestc.edu.cn

DOI: 10.1088/1674-4926/41/10/102801

Abstract: A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper. The device features an integrated Schottky barrier diode and an L-shaped P⁺ shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS). The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction, which significantly reduces reverse recovery charge (Q_rr) and reverse turn-on voltage (V_F). The L-shaped P⁺ region effectively shields the coupling of gate and drain, resulting in a lower gate–drain capacitance (C_gd) and date–drain charge (Q_gd). Compared with that of conventional SiC trench MOSFET (C-TMOS), the V_F and Q_rr of S-TMOS has reduced by 44% and 75%, respectively, with almost the same forward output current and reverse breakdown voltage. Moreover, the S-TMOS reduces Q_gd and C_gd by 32% and 22%, respectively, in comparison with C-TMOS.

Key words: SiC, MOSFET, Schottky barrier diode, reverse recovery, gate-drain charge

References

[1]	Gendron-Hansen A, Sdrulla D, Kashyap A, et al. 4H-SiC junction barrier Schottky diodes and power MOSFETs with high repetitive UIS ruggedness. IEEE Energy Conversion Congress and Exposition (ECCE), 2018, 850
[2]	Jiang H, Wei J, Dai X, et al. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, 49
[3]	Jiang H, Wei J, Dai X, et al. Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss. 28th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2016, 59
[4]	Li X, Tong X, Huang A Q, et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode. IEEE Trans Electron Devices, 2017, 65(1), 347 doi: 10.1109/TED.2017.2767904
[5]	Kobayashi Y, Ishimori H, Kinoshita A, et al. Evaluation of Schottky barrier height on 4H-SiC m-face {1 $\bar 1$ 00} for Schottky barrier diode wall integrated trench MOSFET. Jpn J Appl Phys, 2017, 56(4S), 04CR08 doi: 10.7567/JJAP.56.04CR08
[6]	He Q, Luo X, Liao T, et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 2019, 125, 58 doi: 10.1016/j.spmi.2018.10.016
[7]	Luo X R, Liao T, Wei J, et al. A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge. J Semicond, 2019, 40(5), 052803 doi: 10.1088/1674-4926/40/5/052803
[8]	Zhang M, Wei J, Jiang H, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Reliab, 2017, 17(2), 432 doi: 10.1109/TDMR.2017.2694220
[9]	Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2017, 39(2), 248 doi: 10.1109/LED.2017.2785771
[10]	Agarwal A, Han K, Baliga B J. Analysis of 1.2 kV 4H-SiC trench-gate MOSFETs with thick trench bottom oxide. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, 125
[11]	Jiang H, Wei J, Dai X, et al. SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss. IEEE Electron Device Lett, 2016, 37(10), 1324 doi: 10.1109/LED.2016.2599921
[12]	Peters D, Siemieniec R, Aichinger T, et al. Performance and ruggedness of 1200 V SiC-trench- MOSFET. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017
[13]	Lide D R. CRC handbook of chemistry and physics. Internet version 2005. Boca Raton: CRC Press, 2005
[14]	Heer D, Domes D, Peters D. Switching performance of a 1200 V SiC-trench-MOSFET in a low-power module. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2016, 1
[15]	Lutz J, Schlangenotto H, Scheuermann U, et al. Semiconductor power devices: Physics, characteristics, reliability. Electron Power, 2011, 24(8), 599 doi: 10.1109/MPEL.2018.2886116
[16]	Zhou X, Yue R, Zhang J, et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure. IEEE Trans Electron Devices, 2017, 64(11), 4568 doi: 10.1109/TED.2017.2755721
[17]	Sung W, Baliga B J. Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme. IEEE Electron Device Lett, 2016, 37(12), 1605 doi: 10.1109/LED.2016.2618720
[18]	Sung W, Baliga B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET). IEEE Trans Ind Electrons, 2017, 64(10), 8206 doi: 10.1109/TIE.2017.2696515

Fig. 1. (Color online) Device structure of (a) S-TMOS and (b) C-TMOS.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Forward and reverse conduction I–V characteristics of C-TMOS and S-TMOS with varied L_s. The insets show the forward and reverse current contours of S-TMOS at V_ds = +/– 2 V.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Test circuit for (a) S-TMOS, (b) C-TMOS, and (c) C-TMOS paralleled with an external SBD.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Reverse recovery current waveforms of C-TMOS, S-TMOS with varied L_s and C-TMOS/SBD solution.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) Influence of L_s on BV and Q_rr of S-TMOS. (b) Leakage current of S-TMOS (L_s = 0.5 µm) and C-TMOS.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) (a) Gate-Drain capacitance (C_gd) of the C-TMOS and S-TMOS. (b) Gate charge characteristic curves of C-TMOS and S-TMOS.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) (a) Test circuit for switching characteristic. (b) Turn- off waveforms of C-TMOS and S-TMOS.

DownLoad: Full-Size Img PowerPoint

Fig. 8. (Color online) (a) Dependence of switching loss (E_on + E_off) on gate resister R_G. (b) Comparison of power losses as a function of switching frequency f (@ R_G = 10 Ω).

DownLoad: Full-Size Img PowerPoint

Fig. 9. (Color online) Key fabrication process flows for the S-TMOS: (a) ion implantation to form the P-well and N⁺, P⁺ sources, (b) gate trench etching, (c) P⁺ shielding region implantation, (d) thermal oxidation to form the gate oxide, (e) poly silicon deposition, (f) metallization.

DownLoad: Full-Size Img PowerPoint

Table 1. Performance comparison of C-TMOS and S-TMOS.

Parameter	S-TMOS	C-TMOS
R_on,sp (mΩ·cm²)	4.44	3.71
BV (V)	1055	1072
V_F (V)	1.5	2.7
Q_rr (µC)	1.25	5.04
C_gd (pF/cm²) (@ V_ds = 600 V)	139	179
Q_gd (nC/cm²)	143	209
E_off (mJ/cm²)	2.49	3.08
E_on + E_off (mJ/cm²)	4.50	5.16

DownLoad: CSV

[1]	Gendron-Hansen A, Sdrulla D, Kashyap A, et al. 4H-SiC junction barrier Schottky diodes and power MOSFETs with high repetitive UIS ruggedness. IEEE Energy Conversion Congress and Exposition (ECCE), 2018, 850
[2]	Jiang H, Wei J, Dai X, et al. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, 49
[3]	Jiang H, Wei J, Dai X, et al. Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss. 28th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2016, 59
[4]	Li X, Tong X, Huang A Q, et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode. IEEE Trans Electron Devices, 2017, 65(1), 347 doi: 10.1109/TED.2017.2767904
[5]	Kobayashi Y, Ishimori H, Kinoshita A, et al. Evaluation of Schottky barrier height on 4H-SiC m-face {1 $\bar 1$ 00} for Schottky barrier diode wall integrated trench MOSFET. Jpn J Appl Phys, 2017, 56(4S), 04CR08 doi: 10.7567/JJAP.56.04CR08
[6]	He Q, Luo X, Liao T, et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 2019, 125, 58 doi: 10.1016/j.spmi.2018.10.016
[7]	Luo X R, Liao T, Wei J, et al. A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge. J Semicond, 2019, 40(5), 052803 doi: 10.1088/1674-4926/40/5/052803
[8]	Zhang M, Wei J, Jiang H, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Reliab, 2017, 17(2), 432 doi: 10.1109/TDMR.2017.2694220
[9]	Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2017, 39(2), 248 doi: 10.1109/LED.2017.2785771
[10]	Agarwal A, Han K, Baliga B J. Analysis of 1.2 kV 4H-SiC trench-gate MOSFETs with thick trench bottom oxide. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, 125
[11]	Jiang H, Wei J, Dai X, et al. SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss. IEEE Electron Device Lett, 2016, 37(10), 1324 doi: 10.1109/LED.2016.2599921
[12]	Peters D, Siemieniec R, Aichinger T, et al. Performance and ruggedness of 1200 V SiC-trench- MOSFET. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017
[13]	Lide D R. CRC handbook of chemistry and physics. Internet version 2005. Boca Raton: CRC Press, 2005
[14]	Heer D, Domes D, Peters D. Switching performance of a 1200 V SiC-trench-MOSFET in a low-power module. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2016, 1
[15]	Lutz J, Schlangenotto H, Scheuermann U, et al. Semiconductor power devices: Physics, characteristics, reliability. Electron Power, 2011, 24(8), 599 doi: 10.1109/MPEL.2018.2886116
[16]	Zhou X, Yue R, Zhang J, et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure. IEEE Trans Electron Devices, 2017, 64(11), 4568 doi: 10.1109/TED.2017.2755721
[17]	Sung W, Baliga B J. Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme. IEEE Electron Device Lett, 2016, 37(12), 1605 doi: 10.1109/LED.2016.2618720
[18]	Sung W, Baliga B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET). IEEE Trans Ind Electrons, 2017, 64(10), 8206 doi: 10.1109/TIE.2017.2696515

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Received: 13 December 2019 Revised: 08 January 2020 Online: Accepted Manuscript: 29 February 2020Uncorrected proof: 04 March 2020Published: 01 October 2020

Article Navigation > Journal of Semiconductors > 2020 > 41(10): 102801

Xiaorong Luo, Ke Zhang, Xu Song, Jian Fang, Fei Yang, Bo Zhang. 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region[J]. Journal of Semiconductors, 2020, 41(10): 102801. doi: 10.1088/1674-4926/41/10/102801 ****X R Luo, K Zhang, X Song, J Fang, F Yang, B Zhang, 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region[J]. J. Semicond., 2020, 41(10): 102801. doi: 10.1088/1674-4926/41/10/102801.

Citation:

Xiaorong Luo, Ke Zhang, Xu Song, Jian Fang, Fei Yang, Bo Zhang. 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P⁺ shielding region[J]. Journal of Semiconductors, 2020, 41(10): 102801. doi: 10.1088/1674-4926/41/10/102801 ****

X R Luo, K Zhang, X Song, J Fang, F Yang, B Zhang, 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region[J]. J. Semicond., 2020, 41(10): 102801. doi: 10.1088/1674-4926/41/10/102801.

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4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P⁺ shielding region

DOI: 10.1088/1674-4926/41/10/102801

1.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2.
Global Energy Interconnection Research Institute, Beijing 102209, China

More Information

Corresponding author: Email: xrluo@uestc.edu.cn
Received Date: 2019-12-13
Revised Date: 2020-01-08
Published Date: 2020-10-04

Abstract

Abstract

A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper. The device features an integrated Schottky barrier diode and an L-shaped P⁺ shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS). The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction, which significantly reduces reverse recovery charge (Q_rr) and reverse turn-on voltage (V_F). The L-shaped P⁺ region effectively shields the coupling of gate and drain, resulting in a lower gate–drain capacitance (C_gd) and date–drain charge (Q_gd). Compared with that of conventional SiC trench MOSFET (C-TMOS), the V_F and Q_rr of S-TMOS has reduced by 44% and 75%, respectively, with almost the same forward output current and reverse breakdown voltage. Moreover, the S-TMOS reduces Q_gd and C_gd by 32% and 22%, respectively, in comparison with C-TMOS.
- SiC,
- MOSFET,
- Schottky barrier diode,
- reverse recovery,
- gate-drain charge

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References(18)

References

[1]	Gendron-Hansen A, Sdrulla D, Kashyap A, et al. 4H-SiC junction barrier Schottky diodes and power MOSFETs with high repetitive UIS ruggedness. IEEE Energy Conversion Congress and Exposition (ECCE), 2018, 850
[2]	Jiang H, Wei J, Dai X, et al. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, 49
[3]	Jiang H, Wei J, Dai X, et al. Silicon carbide split-gate MOSFET with merged Schottky barrier diode and reduced switching loss. 28th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2016, 59
[4]	Li X, Tong X, Huang A Q, et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode. IEEE Trans Electron Devices, 2017, 65(1), 347 doi: 10.1109/TED.2017.2767904
[5]	Kobayashi Y, Ishimori H, Kinoshita A, et al. Evaluation of Schottky barrier height on 4H-SiC m-face {1 $\bar 1$ 00} for Schottky barrier diode wall integrated trench MOSFET. Jpn J Appl Phys, 2017, 56(4S), 04CR08 doi: 10.7567/JJAP.56.04CR08
[6]	He Q, Luo X, Liao T, et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 2019, 125, 58 doi: 10.1016/j.spmi.2018.10.016
[7]	Luo X R, Liao T, Wei J, et al. A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge. J Semicond, 2019, 40(5), 052803 doi: 10.1088/1674-4926/40/5/052803
[8]	Zhang M, Wei J, Jiang H, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Reliab, 2017, 17(2), 432 doi: 10.1109/TDMR.2017.2694220
[9]	Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2017, 39(2), 248 doi: 10.1109/LED.2017.2785771
[10]	Agarwal A, Han K, Baliga B J. Analysis of 1.2 kV 4H-SiC trench-gate MOSFETs with thick trench bottom oxide. 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, 125
[11]	Jiang H, Wei J, Dai X, et al. SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss. IEEE Electron Device Lett, 2016, 37(10), 1324 doi: 10.1109/LED.2016.2599921
[12]	Peters D, Siemieniec R, Aichinger T, et al. Performance and ruggedness of 1200 V SiC-trench- MOSFET. 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017
[13]	Lide D R. CRC handbook of chemistry and physics. Internet version 2005. Boca Raton: CRC Press, 2005
[14]	Heer D, Domes D, Peters D. Switching performance of a 1200 V SiC-trench-MOSFET in a low-power module. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2016, 1
[15]	Lutz J, Schlangenotto H, Scheuermann U, et al. Semiconductor power devices: Physics, characteristics, reliability. Electron Power, 2011, 24(8), 599 doi: 10.1109/MPEL.2018.2886116
[16]	Zhou X, Yue R, Zhang J, et al. 4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure. IEEE Trans Electron Devices, 2017, 64(11), 4568 doi: 10.1109/TED.2017.2755721
[17]	Sung W, Baliga B J. Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single ohmic/Schottky process scheme. IEEE Electron Device Lett, 2016, 37(12), 1605 doi: 10.1109/LED.2016.2618720
[18]	Sung W, Baliga B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET). IEEE Trans Ind Electrons, 2017, 64(10), 8206 doi: 10.1109/TIE.2017.2696515

4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P⁺ shielding region

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4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P⁺ shielding region

4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P⁺ shielding region