Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT

R. Singh; T. R. Lenka; R. T. Velpula; B. Jain; H. Q. T. Bui; H. P. T. Nguyen

doi:10.1088/1674-4926/41/10/102802

J. Semicond. > 2020, Volume 41 > Issue 10 > 102802

ARTICLES

Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT

R. Singh¹, T. R. Lenka^1,, R. T. Velpula², B. Jain², H. Q. T. Bui² and H. P. T. Nguyen²

+ Author Affiliations

Corresponding author: T. R. Lenka, Email: trlenka@ieee.org

DOI: 10.1088/1674-4926/41/10/102802

Abstract: In this paper, drain current transient characteristics of β-Ga₂O₃ high electron mobility transistor (HEMT) are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps. An approximately 10 min, and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron (Fe)–doped β-Ga₂O₃ substrate and germanium (Ge)–doped β-Ga₂O₃ epitaxial layer respectively. On-state current lag is more severe due to widely reported defect trap E_C – 0.82 eV over E_C – 0.78 eV, −0.75 eV present in Iron (Fe)-doped β-Ga₂O₃ bulk crystals. A negligible amount of current degradation is observed in the latter case due to the trap level at E_C – 0.98 eV. It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area. This investigation of reversible current collapse phenomenon and assessment of recovery time in β-Ga₂O₃ HEMT is carried out through 2D device simulations using appropriate velocity and charge transport models. This work can further help in the proper characterization of β-Ga₂O₃ devices to understand temporary and permanent device degradation.

Key words: β-Ga₂O₃, current collapse, degradation, HEMT, recovery time, traps, trapping effects

References

[1]	He H Y, Orlando R, Blanco M A, et al. First-principles study of the structural, electronic, and optical properties of Ga₂O₃in its monoclinic and hexagonal phases. Phys Rev B, 2006, 74, 195123 doi: 10.1103/PhysRevB.74.195123
[2]	Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga₂O₃) metal–semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[3]	Ghosh K, Singisetti U. Ab initio velocity-field curves in monoclinic β-Ga₂O₃. J Appl Phys, 2017, 122, 035702 doi: 10.1063/1.4986174
[4]	Varley J B, Weber J R, Janotti A, et al. Oxygen vacancies and donor impurities in β-Ga₂O₃. Appl Phys Lett, 2010, 97, 142106 doi: 10.1063/1.3499306
[5]	Chikoidze E, Fellous A, Perez-Tomas A, et al. P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Mater Today Phys, 2017, 3, 118 doi: 10.1016/j.mtphys.2017.10.002
[6]	Kyrtsos A, Matsubara M, Bellotti E. On the feasibility of p-type Ga₂O₃. Appl Phys Lett, 2018, 112, 032108 doi: 10.1063/1.5009423
[7]	Tomm Y, Reiche P, Klimm D, et al. Czochralski grown Ga₂O₃ crystals. J Cryst Growth, 2000, 220, 510 doi: 10.1016/S0022-0248(00)00851-4
[8]	Aida H, Nishiguchi K, Takeda H, et al. Growth of β-Ga₂O₃ single crystals by the edge-defined, film fed growth method. Jpn J Appl Phys, 2008, 47, 8506 doi: 10.1143/JJAP.47.8506
[9]	Farzana E, Ahmadi E, Speck J S, et al. Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy. J Appl Phys, 2018, 123, 161410 doi: 10.1063/1.5010608
[10]	Zhang Z, Farzana E, Arehart A R, et al. Erratum: “Deep level defects throughout the bandgap of (010) β-Ga₂O₃ detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108, 052105 (2016)]. Appl Phys Lett, 2016, 108, 079901 doi: 10.1063/1.4942431
[11]	Irmscher K, Galazka Z, Pietsch M, et al. Electrical properties of β-Ga₂O₃ single crystals grown by the Czochralski method. J Appl Phys, 2011, 110, 063720 doi: 10.1063/1.3642962
[12]	Ingebrigtsen M E, Varley J B, Kuznetsov A Y, et al. Iron and intrinsic deep level states in Ga₂O₃. Appl Phys Lett, 2018, 112, 042104 doi: 10.1063/1.5020134
[13]	Sasaki K, Higashiwaki M, Kuramata A, et al. Ga₂O₃ Schottky barrier diodes fabricated by using single-crystal β-Ga₂O₃ (010) substrates. IEEE Electron Device Lett, 2013, 34, 493 doi: 10.1109/LED.2013.2244057
[14]	Krishnamoorthy S, Xia Z B, Bajaj S, et al. Delta-doped β-gallium oxide field-effect transistor. Appl Phys Express, 2017, 10, 051102 doi: 10.7567/APEX.10.051102
[15]	Zhou H, Maize K, Qiu G, et al. β-Ga₂O₃ on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect. Appl Phys Lett, 2017, 111, 092102 doi: 10.1063/1.5000735
[16]	Oshima T, Kato Y, Kawano N, et al. Carrier confinement observed at modulation-doped β-(Al_xGa_{1– x})₂O₃/Ga₂O₃ heterojunction interface. Appl Phys Express, 2017, 10, 035701 doi: 10.7567/APEX.10.035701
[17]	Zhang Y W, Neal A, Xia Z B, et al. Demonstration of high mobility and quantum transport in modulation-doped β-(Al_xGa_{1 – x})₂O₃/Ga₂O₃ heterostructures. Appl Phys Lett, 2018, 112, 173502 doi: 10.1063/1.5025704
[18]	McGlone J F, Xia Z B, Zhang Y W, et al. Trapping effects in Si δ-doped β-Ga₂O₃ MESFETs on an Fe-doped β-Ga₂O₃ substrate. IEEE Electron Device Lett, 2018, 39, 1042 doi: 10.1109/LED.2018.2843344
[19]	Polyakov A Y, Smirnov N B, Shchemerov I V, et al. Defect states determining dynamic trapping-detrapping in β-Ga₂O₃ field-effect transistors. ECS J Solid State Sci Technol, 2019, 8, Q3013 doi: 10.1149/2.0031907jss
[20]	Sun H D, Torres Castanedo C G, Liu K K, et al. Valence and conduction band offsets of β-Ga₂O₃/AlN heterojunction. Appl Phys Lett, 2017, 111, 162105 doi: 10.1063/1.5003930
[21]	Mock A, Korlacki R, Briley C, et al. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β-Ga₂O₃. Phys Rev B, 2017, 96, 245205 doi: 10.1103/PhysRevB.96.245205
[22]	Device simulation software, ATLAS user’s manual. Silvaco, Santa Clara, CA, USA, 2009
[23]	Lu Y, Yao H H, Li J, et al. AlN/β-Ga₂O₃ based HEMT: A potential pathway to ultimate high power device. arXiv: 1901.05111, 2019
[24]	Balaz D. Current collapse and device degradation in AlGaN/GaN heterostructure field effect transistors. Ph D Dissertation, University of Glasgow, 2011

Fig. 1. (Color online) Schematic cross sectional view of the analysed device structure.

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Fig. 2. (Color online) Pre-stress and post-stress bias voltages at gate and drain terminals.

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Fig. 3. (Color online) Pre-stress and post-stress drain current. Inset: current collapse.

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Fig. 4. (Color online) Trapping and de-trapping of defect trap under gate stress.

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Fig. 5. (Color online) Drain stress and recovery of current recovery due to de-population of traps.

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Fig. 6. (Color online) Current collapse and recovery curve, showing intentional doped Fe causes most of the current collapse and Ge doping caused current collapse takes approximately 2 h to attain steady state value.

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Fig. 7. (Color online) Ionised trap density horizontally at a depth of 0.5 μm in the substrate.

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Table 1. Deep level traps reported in β-Ga₂O₃ substrate and epitaxial layer, energy level, capture cross section and trap concentration. Fe and Ge enabled current collapse and drain current recovery time to pre-stress condition.

Reference	Trap energy levels (eV)	Capture cross section (10⁻¹⁴ cm^–2)	Trap source	Trap concentration (10¹⁵ cm^–3)	Current collapse/ recovery time
[12]	E_C – 0.78	0.7	Fe-doped substrate (${\overline 2}$01)	10	Moderate/ few seconds
[12]	E_C – 0.75	5	Fe-doped substrate (${\overline 2}$01)	10	Moderate/ few minutes
[9]	E_C – 0.98	0.1− 9	Ge-doped PAMBE on (010) substrate	1.6	Mild/ ~ 1 h
[10]	E_C – 0.82	1	UID bulk EFG wafer (010)	36	Severe/ ~ 10 min

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[1]	He H Y, Orlando R, Blanco M A, et al. First-principles study of the structural, electronic, and optical properties of Ga₂O₃in its monoclinic and hexagonal phases. Phys Rev B, 2006, 74, 195123 doi: 10.1103/PhysRevB.74.195123
[2]	Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga₂O₃) metal–semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[3]	Ghosh K, Singisetti U. Ab initio velocity-field curves in monoclinic β-Ga₂O₃. J Appl Phys, 2017, 122, 035702 doi: 10.1063/1.4986174
[4]	Varley J B, Weber J R, Janotti A, et al. Oxygen vacancies and donor impurities in β-Ga₂O₃. Appl Phys Lett, 2010, 97, 142106 doi: 10.1063/1.3499306
[5]	Chikoidze E, Fellous A, Perez-Tomas A, et al. P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Mater Today Phys, 2017, 3, 118 doi: 10.1016/j.mtphys.2017.10.002
[6]	Kyrtsos A, Matsubara M, Bellotti E. On the feasibility of p-type Ga₂O₃. Appl Phys Lett, 2018, 112, 032108 doi: 10.1063/1.5009423
[7]	Tomm Y, Reiche P, Klimm D, et al. Czochralski grown Ga₂O₃ crystals. J Cryst Growth, 2000, 220, 510 doi: 10.1016/S0022-0248(00)00851-4
[8]	Aida H, Nishiguchi K, Takeda H, et al. Growth of β-Ga₂O₃ single crystals by the edge-defined, film fed growth method. Jpn J Appl Phys, 2008, 47, 8506 doi: 10.1143/JJAP.47.8506
[9]	Farzana E, Ahmadi E, Speck J S, et al. Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy. J Appl Phys, 2018, 123, 161410 doi: 10.1063/1.5010608
[10]	Zhang Z, Farzana E, Arehart A R, et al. Erratum: “Deep level defects throughout the bandgap of (010) β-Ga₂O₃ detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108, 052105 (2016)]. Appl Phys Lett, 2016, 108, 079901 doi: 10.1063/1.4942431
[11]	Irmscher K, Galazka Z, Pietsch M, et al. Electrical properties of β-Ga₂O₃ single crystals grown by the Czochralski method. J Appl Phys, 2011, 110, 063720 doi: 10.1063/1.3642962
[12]	Ingebrigtsen M E, Varley J B, Kuznetsov A Y, et al. Iron and intrinsic deep level states in Ga₂O₃. Appl Phys Lett, 2018, 112, 042104 doi: 10.1063/1.5020134
[13]	Sasaki K, Higashiwaki M, Kuramata A, et al. Ga₂O₃ Schottky barrier diodes fabricated by using single-crystal β-Ga₂O₃ (010) substrates. IEEE Electron Device Lett, 2013, 34, 493 doi: 10.1109/LED.2013.2244057
[14]	Krishnamoorthy S, Xia Z B, Bajaj S, et al. Delta-doped β-gallium oxide field-effect transistor. Appl Phys Express, 2017, 10, 051102 doi: 10.7567/APEX.10.051102
[15]	Zhou H, Maize K, Qiu G, et al. β-Ga₂O₃ on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect. Appl Phys Lett, 2017, 111, 092102 doi: 10.1063/1.5000735
[16]	Oshima T, Kato Y, Kawano N, et al. Carrier confinement observed at modulation-doped β-(Al_xGa_{1– x})₂O₃/Ga₂O₃ heterojunction interface. Appl Phys Express, 2017, 10, 035701 doi: 10.7567/APEX.10.035701
[17]	Zhang Y W, Neal A, Xia Z B, et al. Demonstration of high mobility and quantum transport in modulation-doped β-(Al_xGa_{1 – x})₂O₃/Ga₂O₃ heterostructures. Appl Phys Lett, 2018, 112, 173502 doi: 10.1063/1.5025704
[18]	McGlone J F, Xia Z B, Zhang Y W, et al. Trapping effects in Si δ-doped β-Ga₂O₃ MESFETs on an Fe-doped β-Ga₂O₃ substrate. IEEE Electron Device Lett, 2018, 39, 1042 doi: 10.1109/LED.2018.2843344
[19]	Polyakov A Y, Smirnov N B, Shchemerov I V, et al. Defect states determining dynamic trapping-detrapping in β-Ga₂O₃ field-effect transistors. ECS J Solid State Sci Technol, 2019, 8, Q3013 doi: 10.1149/2.0031907jss
[20]	Sun H D, Torres Castanedo C G, Liu K K, et al. Valence and conduction band offsets of β-Ga₂O₃/AlN heterojunction. Appl Phys Lett, 2017, 111, 162105 doi: 10.1063/1.5003930
[21]	Mock A, Korlacki R, Briley C, et al. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β-Ga₂O₃. Phys Rev B, 2017, 96, 245205 doi: 10.1103/PhysRevB.96.245205
[22]	Device simulation software, ATLAS user’s manual. Silvaco, Santa Clara, CA, USA, 2009
[23]	Lu Y, Yao H H, Li J, et al. AlN/β-Ga₂O₃ based HEMT: A potential pathway to ultimate high power device. arXiv: 1901.05111, 2019
[24]	Balaz D. Current collapse and device degradation in AlGaN/GaN heterostructure field effect transistors. Ph D Dissertation, University of Glasgow, 2011

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Received: 12 February 2020 Revised: 27 May 2020 Online: Accepted Manuscript: 28 June 2020Uncorrected proof: 01 July 2020Published: 01 October 2020

Article Navigation > Journal of Semiconductors > 2020 > 41(10): 102802

R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen. Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT[J]. Journal of Semiconductors, 2020, 41(10): 102802. doi: 10.1088/1674-4926/41/10/102802 ****R Singh, T R Lenka, R T Velpula, B Jain, H Q T Bui, H P T Nguyen, Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT[J]. J. Semicond., 2020, 41(10): 102802. doi: 10.1088/1674-4926/41/10/102802.

Citation:

R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen. Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT[J]. Journal of Semiconductors, 2020, 41(10): 102802. doi: 10.1088/1674-4926/41/10/102802 ****

R Singh, T R Lenka, R T Velpula, B Jain, H Q T Bui, H P T Nguyen, Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT[J]. J. Semicond., 2020, 41(10): 102802. doi: 10.1088/1674-4926/41/10/102802.

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Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT

DOI: 10.1088/1674-4926/41/10/102802

1.
Department of Electronics & Communication Engineering, National Institute of Technology Silchar, AS, 788010, India
2.
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, 07102, USA

More Information

Corresponding author: Email: trlenka@ieee.org
Received Date: 2020-02-12
Revised Date: 2020-05-27
Published Date: 2020-10-04

Abstract

Abstract

In this paper, drain current transient characteristics of β-Ga₂O₃ high electron mobility transistor (HEMT) are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps. An approximately 10 min, and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron (Fe)–doped β-Ga₂O₃ substrate and germanium (Ge)–doped β-Ga₂O₃ epitaxial layer respectively. On-state current lag is more severe due to widely reported defect trap E_C – 0.82 eV over E_C – 0.78 eV, −0.75 eV present in Iron (Fe)-doped β-Ga₂O₃ bulk crystals. A negligible amount of current degradation is observed in the latter case due to the trap level at E_C – 0.98 eV. It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area. This investigation of reversible current collapse phenomenon and assessment of recovery time in β-Ga₂O₃ HEMT is carried out through 2D device simulations using appropriate velocity and charge transport models. This work can further help in the proper characterization of β-Ga₂O₃ devices to understand temporary and permanent device degradation.
- β-Ga₂O₃,
- current collapse,
- degradation,
- HEMT,
- recovery time,
- traps,
- trapping effects

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References(24)

References

[1]	He H Y, Orlando R, Blanco M A, et al. First-principles study of the structural, electronic, and optical properties of Ga₂O₃in its monoclinic and hexagonal phases. Phys Rev B, 2006, 74, 195123 doi: 10.1103/PhysRevB.74.195123
[2]	Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga₂O₃) metal–semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates. Appl Phys Lett, 2012, 100, 013504 doi: 10.1063/1.3674287
[3]	Ghosh K, Singisetti U. Ab initio velocity-field curves in monoclinic β-Ga₂O₃. J Appl Phys, 2017, 122, 035702 doi: 10.1063/1.4986174
[4]	Varley J B, Weber J R, Janotti A, et al. Oxygen vacancies and donor impurities in β-Ga₂O₃. Appl Phys Lett, 2010, 97, 142106 doi: 10.1063/1.3499306
[5]	Chikoidze E, Fellous A, Perez-Tomas A, et al. P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Mater Today Phys, 2017, 3, 118 doi: 10.1016/j.mtphys.2017.10.002
[6]	Kyrtsos A, Matsubara M, Bellotti E. On the feasibility of p-type Ga₂O₃. Appl Phys Lett, 2018, 112, 032108 doi: 10.1063/1.5009423
[7]	Tomm Y, Reiche P, Klimm D, et al. Czochralski grown Ga₂O₃ crystals. J Cryst Growth, 2000, 220, 510 doi: 10.1016/S0022-0248(00)00851-4
[8]	Aida H, Nishiguchi K, Takeda H, et al. Growth of β-Ga₂O₃ single crystals by the edge-defined, film fed growth method. Jpn J Appl Phys, 2008, 47, 8506 doi: 10.1143/JJAP.47.8506
[9]	Farzana E, Ahmadi E, Speck J S, et al. Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy. J Appl Phys, 2018, 123, 161410 doi: 10.1063/1.5010608
[10]	Zhang Z, Farzana E, Arehart A R, et al. Erratum: “Deep level defects throughout the bandgap of (010) β-Ga₂O₃ detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108, 052105 (2016)]. Appl Phys Lett, 2016, 108, 079901 doi: 10.1063/1.4942431
[11]	Irmscher K, Galazka Z, Pietsch M, et al. Electrical properties of β-Ga₂O₃ single crystals grown by the Czochralski method. J Appl Phys, 2011, 110, 063720 doi: 10.1063/1.3642962
[12]	Ingebrigtsen M E, Varley J B, Kuznetsov A Y, et al. Iron and intrinsic deep level states in Ga₂O₃. Appl Phys Lett, 2018, 112, 042104 doi: 10.1063/1.5020134
[13]	Sasaki K, Higashiwaki M, Kuramata A, et al. Ga₂O₃ Schottky barrier diodes fabricated by using single-crystal β-Ga₂O₃ (010) substrates. IEEE Electron Device Lett, 2013, 34, 493 doi: 10.1109/LED.2013.2244057
[14]	Krishnamoorthy S, Xia Z B, Bajaj S, et al. Delta-doped β-gallium oxide field-effect transistor. Appl Phys Express, 2017, 10, 051102 doi: 10.7567/APEX.10.051102
[15]	Zhou H, Maize K, Qiu G, et al. β-Ga₂O₃ on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect. Appl Phys Lett, 2017, 111, 092102 doi: 10.1063/1.5000735
[16]	Oshima T, Kato Y, Kawano N, et al. Carrier confinement observed at modulation-doped β-(Al_xGa_{1– x})₂O₃/Ga₂O₃ heterojunction interface. Appl Phys Express, 2017, 10, 035701 doi: 10.7567/APEX.10.035701
[17]	Zhang Y W, Neal A, Xia Z B, et al. Demonstration of high mobility and quantum transport in modulation-doped β-(Al_xGa_{1 – x})₂O₃/Ga₂O₃ heterostructures. Appl Phys Lett, 2018, 112, 173502 doi: 10.1063/1.5025704
[18]	McGlone J F, Xia Z B, Zhang Y W, et al. Trapping effects in Si δ-doped β-Ga₂O₃ MESFETs on an Fe-doped β-Ga₂O₃ substrate. IEEE Electron Device Lett, 2018, 39, 1042 doi: 10.1109/LED.2018.2843344
[19]	Polyakov A Y, Smirnov N B, Shchemerov I V, et al. Defect states determining dynamic trapping-detrapping in β-Ga₂O₃ field-effect transistors. ECS J Solid State Sci Technol, 2019, 8, Q3013 doi: 10.1149/2.0031907jss
[20]	Sun H D, Torres Castanedo C G, Liu K K, et al. Valence and conduction band offsets of β-Ga₂O₃/AlN heterojunction. Appl Phys Lett, 2017, 111, 162105 doi: 10.1063/1.5003930
[21]	Mock A, Korlacki R, Briley C, et al. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β-Ga₂O₃. Phys Rev B, 2017, 96, 245205 doi: 10.1103/PhysRevB.96.245205
[22]	Device simulation software, ATLAS user’s manual. Silvaco, Santa Clara, CA, USA, 2009
[23]	Lu Y, Yao H H, Li J, et al. AlN/β-Ga₂O₃ based HEMT: A potential pathway to ultimate high power device. arXiv: 1901.05111, 2019
[24]	Balaz D. Current collapse and device degradation in AlGaN/GaN heterostructure field effect transistors. Ph D Dissertation, University of Glasgow, 2011

Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT

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Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT

Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT