Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches

Yuwei Cai; Zhaohao Zhang; Qingzhu Zhang; Jinjuan Xiang; Gaobo Xu; Zhenhua Wu; Jie Gu; Huaxiang Yin

doi:10.1088/1674-4926/42/11/114101

J. Semicond. > 2021, Volume 42 > Issue 11 > 114101

ARTICLES

Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches

Yuwei Cai^{1, 2}, Zhaohao Zhang¹, Qingzhu Zhang^1,, Jinjuan Xiang¹, Gaobo Xu¹, Zhenhua Wu¹, Jie Gu^{1, 2} and Huaxiang Yin^1,

+ Author Affiliations

Corresponding author: Qingzhu Zhang, zhangqingzhu@ime.ac.cn; Huaxiang Yin, yinhuaxiang@ime.ac.cn

DOI: 10.1088/1674-4926/42/11/114101

Abstract: The HfO₂-based ferroelectric field effect transistors (FeFET) have been widely studied for their ability in breaking the Boltzmann limit and the potential to be applied to low-power circuits. This article systematically investigates the transient response of negative capacitance (NC) fin field-effect transistors (FinFETs) through two kinds of self-built test schemes. By comparing the results with those of conventional FinFETs, we experimentally demonstrate that the on-current of the NC FinFET is not degraded in the MHz frequency domain. Further test results in the higher frequency domain show that the on-state current of the prepared NC FinFET increases with the decreasing gate pulse width at pulse widths below 100 ns and is consistently greater (about 80% with NC NMOS) than the on-state current of the conventional transistor, indicating the great potential of the NC FET for future high-frequency applications.

Key words: transient response, pulse train, NC FET, measurement, charge trapping

References

[1]	Salahuddin S, Datta S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett, 2008, 8, 405 doi: 10.1021/nl071804g
[2]	Rusu A, Salvatore G A, Jiménez D, et al. Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification. 2010 Int Electron Devices Meet, 2010, 16.3.1
[3]	Zhou J R, Han G Q, Xu N, et al. Experimental validation of depolarization field produced voltage gains in negative capacitance field-effect transistors. IEEE Trans Electron Devices, 2019, 66, 4419 doi: 10.1109/TED.2019.2931402
[4]	Huang Q Q, Wang H M, Zhao Y, et al. New understanding of negative capacitance devices for low-power logic applications. 2019 China Semiconductor Technology International Conference (CSTIC), 2019, 1
[5]	Zhang Y J, Wang H Y, Zhang L, et al. Field-effect transistor memories based on ferroelectric polymers. J Semicond, 2017, 38, 111001 doi: 10.1088/1674-4926/38/11/111001
[6]	Xu H F. Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric. J Semicond, 2018, 39, 104004 doi: 10.1088/1674-4926/39/10/104004
[7]	Zhang Z H, Xu G B, Zhang Q Z, et al. FinFET with improved subthreshold swing and drain current using 3-nm ferroelectric Hf_0.5Zr_0.5O₂. IEEE Electron Device Lett, 2019, 40, 367 doi: 10.1109/LED.2019.2891364
[8]	Zhou J R, Han G Q, Li Q L, et al. Ferroelectric HfZrO_x Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I_ds. 2016 IEEE Int Electron Devices Meet IEDM, 2016, 12.2.1
[9]	Cai Y W, Zhang Q Z, Zhang Z H, et al. Endurance characteristics of negative capacitance FinFETs with negligible hysteresis. IEEE Electron Device Lett, 2021, 42, 260 doi: 10.1109/LED.2020.3048349
[10]	Li Y X, Liang R R, Wang J B, et al. Negative capacitance oxide thin-film transistor with sub-60 mV/decade subthreshold swing. IEEE Electron Device Lett, 2019, 40, 826 doi: 10.1109/LED.2019.2907988
[11]	Wang J L, Wang D, Li Q, et al. Excellent ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films induced by Al₂O₃ dielectric layer. IEEE Electron Device Lett, 2019, 40, 1937 doi: 10.1109/LED.2019.2950916
[12]	Liao J J, Zeng B J, Sun Q, et al. Grain size engineering of ferroelectric Zr-doped HfO₂ for the highly scaled devices applications. IEEE Electron Device Lett, 2019, 40, 1868 doi: 10.1109/LED.2019.2944491
[13]	Tsai M J, Chen P J, Peng P Y, et al. Atomic-level Analysis by synchrotron radiation and characterization of 2 nm, 3 nm, and 5 nm-thick Hf_0.5Zr_0.5O₂ negative capacitance FinFET. 2019 Silicon Nanoelectronics Workshop (SNW), 2019, 1
[14]	Nowak E J, Aller I, Ludwig T, et al. Turning silicon on its edge [double gate CMOS/FinFET technology]. IEEE Circuits Devices Mag, 2004, 20, 20 doi: 10.1109/MCD.2004.1263404
[15]	Suh D, Fossum J G. A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits. IEEE Trans Electron Devices, 1995, 42, 728 doi: 10.1109/16.372078
[16]	Kerber M A. Methodology for electrical characterization of MOS devices with alternative gate dielectrics. PhD Thesis, Tech. University Darmstadt, 2003
[17]	Chatterjee K, Rosner A J, Salahuddin S. Intrinsic speed limit of negative capacitance transistors. IEEE Electron Device Lett, 2017, 38, 1328 doi: 10.1109/LED.2017.2731343
[18]	Kwon D, Liao Y H, Lin Y K, et al. Response speed of negative capacitance FinFETs. 2018 IEEE Symposium on VLSI Technology, 2018, 49
[19]	Krivokapic Z, Rana U, Galatage R, et al. 14 nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications. 2017 IEEE Int Electron Devices Meet IEDM, 2017, 15.1.1
[20]	Li K S, Wei Y J, Chen Y J, et al. Negative-capacitance FinFET inverter, ring oscillator, SRAM cell, and f_t. 2018 IEEE Int Electron Devices Meet IEDM, 2018, 31.7.1
[21]	Kobayashi M, Ueyama N, Jang K, et al. Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO₂. 2016 IEEE Int Electron Devices Meet IEDM, 2016, 12.3.1
[22]	Yuan Z, Rizwan S, Wong M, et al. Switching-speed limitations of ferroelectric negative-capacitance FETs. IEEE Trans Electron Devices, 2016, 63, 4046 doi: 10.1109/TED.2016.2602209
[23]	Zhou J R, Wu J B, Han G Q, et al. Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz. 2017 IEEE Int Electron Devices Meet IEDM, 2017, 15.5.1
[24]	B1542A 10 ns Pulsed IV Parametric Test Solution, Keysight, Santa Rosa, CA, USA
[25]	Instruments 4225-PMU Ultrafast-Fast I-V Module, Keithley, Cleveland, OH, USA
[26]	B1530A Waveform Generator/Fast Measurement Unit, Keysight, Santa Rosa, CA, USA
[27]	Yu X, Chen B, Cheng R, et al. Fast-trap characterization in Ge CMOS using sub-1 ns ultra-fast measurement system. 2016 IEEE International Electron Devices Meeting (IEDM), 2016, 31.3.1
[28]	Wong J C, Salahuddin S. Negative capacitance transistors. Proc IEEE, 2019, 107, 49 doi: 10.1109/JPROC.2018.2884518

Fig. 1. (Color online) (a) The fabrication flow of the fabrication of NC FinFET. (b) Cross-sectional TEM image of the NC FinFET device. (c) Schematic diagram of the resistive load inverter characterization single-transistor frequency characteristics test circuit. (d) Schematic diagram of the optimization measurement scheme.

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Fig. 2. (Color online) Real-time output data of the load-resistance based inverter measurement, with the gate pulse width (a) 1 ms, and (b) 10 μs, respectively.

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Fig. 3. (Color online) Experimentally measured output voltage as a function of the applied gate signal frequencies.

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Fig. 4. Waveforms of different frequencies displayed directly on the oscilloscope after resistive loading, (a)10 kHz and (b) 100 kHz.

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Fig. 5. (Color online) The measured real-time pulse train on-current of single-transistor.

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Fig. 6. (Color online) Measured transient currents of the single transistor, (a) with 10 ms pulse width, (b) with 1 μs pulse width, (c) variation of the extracted on-state currents of the single-transistor with frequency at different gate voltages.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) Real-time test results of on-state I_DS of the NC FinFET.

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Fig. 8. (Color online) Experimentally measured variation of the on-state current with pulse width for NC FinFET and conventional FinFET. (a) NMOS. (b) PMOS.

DownLoad: Full-Size Img PowerPoint

[1]	Salahuddin S, Datta S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett, 2008, 8, 405 doi: 10.1021/nl071804g
[2]	Rusu A, Salvatore G A, Jiménez D, et al. Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification. 2010 Int Electron Devices Meet, 2010, 16.3.1
[3]	Zhou J R, Han G Q, Xu N, et al. Experimental validation of depolarization field produced voltage gains in negative capacitance field-effect transistors. IEEE Trans Electron Devices, 2019, 66, 4419 doi: 10.1109/TED.2019.2931402
[4]	Huang Q Q, Wang H M, Zhao Y, et al. New understanding of negative capacitance devices for low-power logic applications. 2019 China Semiconductor Technology International Conference (CSTIC), 2019, 1
[5]	Zhang Y J, Wang H Y, Zhang L, et al. Field-effect transistor memories based on ferroelectric polymers. J Semicond, 2017, 38, 111001 doi: 10.1088/1674-4926/38/11/111001
[6]	Xu H F. Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric. J Semicond, 2018, 39, 104004 doi: 10.1088/1674-4926/39/10/104004
[7]	Zhang Z H, Xu G B, Zhang Q Z, et al. FinFET with improved subthreshold swing and drain current using 3-nm ferroelectric Hf_0.5Zr_0.5O₂. IEEE Electron Device Lett, 2019, 40, 367 doi: 10.1109/LED.2019.2891364
[8]	Zhou J R, Han G Q, Li Q L, et al. Ferroelectric HfZrO_x Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I_ds. 2016 IEEE Int Electron Devices Meet IEDM, 2016, 12.2.1
[9]	Cai Y W, Zhang Q Z, Zhang Z H, et al. Endurance characteristics of negative capacitance FinFETs with negligible hysteresis. IEEE Electron Device Lett, 2021, 42, 260 doi: 10.1109/LED.2020.3048349
[10]	Li Y X, Liang R R, Wang J B, et al. Negative capacitance oxide thin-film transistor with sub-60 mV/decade subthreshold swing. IEEE Electron Device Lett, 2019, 40, 826 doi: 10.1109/LED.2019.2907988
[11]	Wang J L, Wang D, Li Q, et al. Excellent ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films induced by Al₂O₃ dielectric layer. IEEE Electron Device Lett, 2019, 40, 1937 doi: 10.1109/LED.2019.2950916
[12]	Liao J J, Zeng B J, Sun Q, et al. Grain size engineering of ferroelectric Zr-doped HfO₂ for the highly scaled devices applications. IEEE Electron Device Lett, 2019, 40, 1868 doi: 10.1109/LED.2019.2944491
[13]	Tsai M J, Chen P J, Peng P Y, et al. Atomic-level Analysis by synchrotron radiation and characterization of 2 nm, 3 nm, and 5 nm-thick Hf_0.5Zr_0.5O₂ negative capacitance FinFET. 2019 Silicon Nanoelectronics Workshop (SNW), 2019, 1
[14]	Nowak E J, Aller I, Ludwig T, et al. Turning silicon on its edge [double gate CMOS/FinFET technology]. IEEE Circuits Devices Mag, 2004, 20, 20 doi: 10.1109/MCD.2004.1263404
[15]	Suh D, Fossum J G. A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits. IEEE Trans Electron Devices, 1995, 42, 728 doi: 10.1109/16.372078
[16]	Kerber M A. Methodology for electrical characterization of MOS devices with alternative gate dielectrics. PhD Thesis, Tech. University Darmstadt, 2003
[17]	Chatterjee K, Rosner A J, Salahuddin S. Intrinsic speed limit of negative capacitance transistors. IEEE Electron Device Lett, 2017, 38, 1328 doi: 10.1109/LED.2017.2731343
[18]	Kwon D, Liao Y H, Lin Y K, et al. Response speed of negative capacitance FinFETs. 2018 IEEE Symposium on VLSI Technology, 2018, 49
[19]	Krivokapic Z, Rana U, Galatage R, et al. 14 nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications. 2017 IEEE Int Electron Devices Meet IEDM, 2017, 15.1.1
[20]	Li K S, Wei Y J, Chen Y J, et al. Negative-capacitance FinFET inverter, ring oscillator, SRAM cell, and f_t. 2018 IEEE Int Electron Devices Meet IEDM, 2018, 31.7.1
[21]	Kobayashi M, Ueyama N, Jang K, et al. Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO₂. 2016 IEEE Int Electron Devices Meet IEDM, 2016, 12.3.1
[22]	Yuan Z, Rizwan S, Wong M, et al. Switching-speed limitations of ferroelectric negative-capacitance FETs. IEEE Trans Electron Devices, 2016, 63, 4046 doi: 10.1109/TED.2016.2602209
[23]	Zhou J R, Wu J B, Han G Q, et al. Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz. 2017 IEEE Int Electron Devices Meet IEDM, 2017, 15.5.1
[24]	B1542A 10 ns Pulsed IV Parametric Test Solution, Keysight, Santa Rosa, CA, USA
[25]	Instruments 4225-PMU Ultrafast-Fast I-V Module, Keithley, Cleveland, OH, USA
[26]	B1530A Waveform Generator/Fast Measurement Unit, Keysight, Santa Rosa, CA, USA
[27]	Yu X, Chen B, Cheng R, et al. Fast-trap characterization in Ge CMOS using sub-1 ns ultra-fast measurement system. 2016 IEEE International Electron Devices Meeting (IEDM), 2016, 31.3.1
[28]	Wong J C, Salahuddin S. Negative capacitance transistors. Proc IEEE, 2019, 107, 49 doi: 10.1109/JPROC.2018.2884518

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Received: 05 April 2021 Revised: 23 April 2021 Online: Accepted Manuscript: 08 June 2021Uncorrected proof: 21 June 2021Published: 01 November 2021

Article Navigation > Journal of Semiconductors > 2021 > 42(11): 114101

Yuwei Cai, Zhaohao Zhang, Qingzhu Zhang, Jinjuan Xiang, Gaobo Xu, Zhenhua Wu, Jie Gu, Huaxiang Yin. Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches[J]. Journal of Semiconductors, 2021, 42(11): 114101. doi: 10.1088/1674-4926/42/11/114101 ****Y W Cai, Z H Zhang, Q Z Zhang, J J Xiang, G B Xu, Z H Wu, J Gu, H X Yin, Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches[J]. J. Semicond., 2021, 42(11): 114101. doi: 10.1088/1674-4926/42/11/114101.

Citation:

Y W Cai, Z H Zhang, Q Z Zhang, J J Xiang, G B Xu, Z H Wu, J Gu, H X Yin, Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches[J]. J. Semicond., 2021, 42(11): 114101. doi: 10.1088/1674-4926/42/11/114101.

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Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches

DOI: 10.1088/1674-4926/42/11/114101

1.
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Yuwei Cai：received his BS and MS degree from the School of Physics Engineering, Zhengzhou University, Zhengzhou, China. Now he is pursuing the PhD degree in the Institute of Microelectronics, Chinese Academy of Sciences. His research interests include process investigation of novel low-power ferroelectric logic devices and device performance characterization
Qingzhu Zhang：received his PhD degree in General Research Institute for Nonferrous Metals, Beijing, China, in 2020. In 2014, he joined the Institute of Microelectronic, Chinese Academy of Sciences, Beijing, as an associate professor. His current research interests include advanced GAA NW CMOS FET and silicon NW sensors
Huaxiang Yin：obtained his PhD degree in Microelectronics and Solid State Electronics from the Institute of Microelectronics, Chinese Academy of Sciences, in 2003. Following working on high-performance polysilicon and new oxide thin film transistors at the Research Office of Samsung Electronics General Technology Institute in Korea, he joined the Institute of Microelectronics, Chinese Academy of Sciences, since 2010. His research interests include nano-CMOS devices, advanced process technologies for integrated circuits, nanomaterial devices, silicon-based radiation sensors, etc
Corresponding author: zhangqingzhu@ime.ac.cn; yinhuaxiang@ime.ac.cn
Received Date: 2021-04-05
Revised Date: 2021-04-23
Published Date: 2021-11-10

Abstract

Abstract

The HfO₂-based ferroelectric field effect transistors (FeFET) have been widely studied for their ability in breaking the Boltzmann limit and the potential to be applied to low-power circuits. This article systematically investigates the transient response of negative capacitance (NC) fin field-effect transistors (FinFETs) through two kinds of self-built test schemes. By comparing the results with those of conventional FinFETs, we experimentally demonstrate that the on-current of the NC FinFET is not degraded in the MHz frequency domain. Further test results in the higher frequency domain show that the on-state current of the prepared NC FinFET increases with the decreasing gate pulse width at pulse widths below 100 ns and is consistently greater (about 80% with NC NMOS) than the on-state current of the conventional transistor, indicating the great potential of the NC FET for future high-frequency applications.
- transient response,
- pulse train,
- NC FET,
- measurement,
- charge trapping

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References(28)

References

[1]	Salahuddin S, Datta S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett, 2008, 8, 405 doi: 10.1021/nl071804g
[2]	Rusu A, Salvatore G A, Jiménez D, et al. Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification. 2010 Int Electron Devices Meet, 2010, 16.3.1
[3]	Zhou J R, Han G Q, Xu N, et al. Experimental validation of depolarization field produced voltage gains in negative capacitance field-effect transistors. IEEE Trans Electron Devices, 2019, 66, 4419 doi: 10.1109/TED.2019.2931402
[4]	Huang Q Q, Wang H M, Zhao Y, et al. New understanding of negative capacitance devices for low-power logic applications. 2019 China Semiconductor Technology International Conference (CSTIC), 2019, 1
[5]	Zhang Y J, Wang H Y, Zhang L, et al. Field-effect transistor memories based on ferroelectric polymers. J Semicond, 2017, 38, 111001 doi: 10.1088/1674-4926/38/11/111001
[6]	Xu H F. Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric. J Semicond, 2018, 39, 104004 doi: 10.1088/1674-4926/39/10/104004
[7]	Zhang Z H, Xu G B, Zhang Q Z, et al. FinFET with improved subthreshold swing and drain current using 3-nm ferroelectric Hf_0.5Zr_0.5O₂. IEEE Electron Device Lett, 2019, 40, 367 doi: 10.1109/LED.2019.2891364
[8]	Zhou J R, Han G Q, Li Q L, et al. Ferroelectric HfZrO_x Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I_ds. 2016 IEEE Int Electron Devices Meet IEDM, 2016, 12.2.1
[9]	Cai Y W, Zhang Q Z, Zhang Z H, et al. Endurance characteristics of negative capacitance FinFETs with negligible hysteresis. IEEE Electron Device Lett, 2021, 42, 260 doi: 10.1109/LED.2020.3048349
[10]	Li Y X, Liang R R, Wang J B, et al. Negative capacitance oxide thin-film transistor with sub-60 mV/decade subthreshold swing. IEEE Electron Device Lett, 2019, 40, 826 doi: 10.1109/LED.2019.2907988
[11]	Wang J L, Wang D, Li Q, et al. Excellent ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films induced by Al₂O₃ dielectric layer. IEEE Electron Device Lett, 2019, 40, 1937 doi: 10.1109/LED.2019.2950916
[12]	Liao J J, Zeng B J, Sun Q, et al. Grain size engineering of ferroelectric Zr-doped HfO₂ for the highly scaled devices applications. IEEE Electron Device Lett, 2019, 40, 1868 doi: 10.1109/LED.2019.2944491
[13]	Tsai M J, Chen P J, Peng P Y, et al. Atomic-level Analysis by synchrotron radiation and characterization of 2 nm, 3 nm, and 5 nm-thick Hf_0.5Zr_0.5O₂ negative capacitance FinFET. 2019 Silicon Nanoelectronics Workshop (SNW), 2019, 1
[14]	Nowak E J, Aller I, Ludwig T, et al. Turning silicon on its edge [double gate CMOS/FinFET technology]. IEEE Circuits Devices Mag, 2004, 20, 20 doi: 10.1109/MCD.2004.1263404
[15]	Suh D, Fossum J G. A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits. IEEE Trans Electron Devices, 1995, 42, 728 doi: 10.1109/16.372078
[16]	Kerber M A. Methodology for electrical characterization of MOS devices with alternative gate dielectrics. PhD Thesis, Tech. University Darmstadt, 2003
[17]	Chatterjee K, Rosner A J, Salahuddin S. Intrinsic speed limit of negative capacitance transistors. IEEE Electron Device Lett, 2017, 38, 1328 doi: 10.1109/LED.2017.2731343
[18]	Kwon D, Liao Y H, Lin Y K, et al. Response speed of negative capacitance FinFETs. 2018 IEEE Symposium on VLSI Technology, 2018, 49
[19]	Krivokapic Z, Rana U, Galatage R, et al. 14 nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications. 2017 IEEE Int Electron Devices Meet IEDM, 2017, 15.1.1
[20]	Li K S, Wei Y J, Chen Y J, et al. Negative-capacitance FinFET inverter, ring oscillator, SRAM cell, and f_t. 2018 IEEE Int Electron Devices Meet IEDM, 2018, 31.7.1
[21]	Kobayashi M, Ueyama N, Jang K, et al. Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO₂. 2016 IEEE Int Electron Devices Meet IEDM, 2016, 12.3.1
[22]	Yuan Z, Rizwan S, Wong M, et al. Switching-speed limitations of ferroelectric negative-capacitance FETs. IEEE Trans Electron Devices, 2016, 63, 4046 doi: 10.1109/TED.2016.2602209
[23]	Zhou J R, Wu J B, Han G Q, et al. Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz. 2017 IEEE Int Electron Devices Meet IEDM, 2017, 15.5.1
[24]	B1542A 10 ns Pulsed IV Parametric Test Solution, Keysight, Santa Rosa, CA, USA
[25]	Instruments 4225-PMU Ultrafast-Fast I-V Module, Keithley, Cleveland, OH, USA
[26]	B1530A Waveform Generator/Fast Measurement Unit, Keysight, Santa Rosa, CA, USA
[27]	Yu X, Chen B, Cheng R, et al. Fast-trap characterization in Ge CMOS using sub-1 ns ultra-fast measurement system. 2016 IEEE International Electron Devices Meeting (IEDM), 2016, 31.3.1
[28]	Wong J C, Salahuddin S. Negative capacitance transistors. Proc IEEE, 2019, 107, 49 doi: 10.1109/JPROC.2018.2884518

Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches

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Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches

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Investigation of time domain characteristics of negative capacitance FinFET by pulse-train approaches

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