Design technology co-optimization towards sub-3 nm technology nodes

J. Semicond. > 2021, Volume 42 > Issue 2 > 020301

COMMENTS AND OPINIONS

+ Author Affiliations

Corresponding author: Genquan Han, gqhan@xidian.edu.cn; Yue Hao, yhao@xidian.edu.cn

[1]	Bae G, Bae D I, Kang M, et al. 3nm GAA technology featuring multi-bridge-channel FET for low power and high performance applications. 2018 IEEE International Electron Devices Meeting (IEDM), 2018, 28
[2]	Weckx P, Ryckaert J, Litta E D, et al. Novel forksheet device architecture as ultimate logic scaling device towards 2nm. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 36
[3]	Ryckaert J, Schuddinck P, Weckx P, et al. The complementary FET (CFET) for CMOS scaling beyond N3. 2018 IEEE Symposium on VLSI Technology, 2018, 141
[4]	Liu M, Scholz S, Mertens K, et al. First demonstration of vertical Ge_0.92Sn_0.08/Ge and Ge GAA nanowire nMOSFETs with low SS of 66 mV/dec and small DIBL of 35 mV/V. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 29
[5]	Hills G, Lau C, Wright A, et al. Modern microprocessor built from complementary carbon nanotube transistors. Nature, 2019, 572(7771), 595 doi: 10.1038/s41586-019-1493-8

Fig. 1. (Color online) Logic transistor roadmap in the era of post Moore’s Law.

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[1]	Bae G, Bae D I, Kang M, et al. 3nm GAA technology featuring multi-bridge-channel FET for low power and high performance applications. 2018 IEEE International Electron Devices Meeting (IEDM), 2018, 28
[2]	Weckx P, Ryckaert J, Litta E D, et al. Novel forksheet device architecture as ultimate logic scaling device towards 2nm. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 36
[3]	Ryckaert J, Schuddinck P, Weckx P, et al. The complementary FET (CFET) for CMOS scaling beyond N3. 2018 IEEE Symposium on VLSI Technology, 2018, 141
[4]	Liu M, Scholz S, Mertens K, et al. First demonstration of vertical Ge_0.92Sn_0.08/Ge and Ge GAA nanowire nMOSFETs with low SS of 66 mV/dec and small DIBL of 35 mV/V. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 29
[5]	Hills G, Lau C, Wright A, et al. Modern microprocessor built from complementary carbon nanotube transistors. Nature, 2019, 572(7771), 595 doi: 10.1038/s41586-019-1493-8