Citation: |
Chao Fan, Yahua Ran, Liqun Ye. Ultra wideband CMOS digital T-type attenuator with low phase errors[J]. Journal of Semiconductors, 2022, 43(3): 032401. doi: 10.1088/1674-4926/43/3/032401
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C Fan, Y H Ran, L Q Ye, Ultra wideband CMOS digital T-type attenuator with low phase errors[J]. J. Semicond., 2022, 43(3): 032401. doi: 10.1088/1674-4926/43/3/032401.
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Ultra wideband CMOS digital T-type attenuator with low phase errors
DOI: 10.1088/1674-4926/43/3/032401
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Abstract
A proposed inductive-phase-compensation ultra wideband CMOS digital T-type attenuator design based on an analysis of minimising phase errors is presented in this letter. In a standard CMOS technology, the proposed attenuator is analytically demonstrated to have low phase errors due to the inductive-phase-compensation network. A design equation is inferred and a wide-band 4dB attenuation bit digital attenuator with low phase errors is designed as a test vehicle for the proposed approach. -
References
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