J. Semicond. > 2022, Volume 43 > Issue 6 > 063101
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REVIEWS

Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices

Ye Yuan1, , Shengqiang Zhou2 and Xinqiang Wang1, 3,

+ Author Affiliations

 Corresponding author: Ye Yuan, yuanye@sslab.org.cn; Xinqiang Wang, wangshi@pku.edu.cn

DOI: 10.1088/1674-4926/43/6/063101

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Abstract: In this review, the application of light ion irradiation is discussed for tailoring novel functional materials and for improving the performance in SiC or Si based electrical power devices. The deep traps and electronic disorder produced by light ion irradiation can modify the electrical, magnetic, and optical properties of films (e.g., dilute ferromagnetic semiconductors and topological materials). Additionally, benefiting from the high reproducibility, precise manipulation of functional depth and density of defects, as well as the flexible patternability, the helium or proton ion irradiation has been successfully employed in improving the dynamic performance of SiC and Si based PiN diode power devices by reducing their majority carrier lifetime, although the static performance is sacrificed due to deep level traps. Such a trade-off has been regarded as the key point to compromise the static and dynamic performances of power devices. As a result, herein the light ion irradiation is highlighted in both exploring new physics and optimizing the performance in functional materials and electrical devices.

Key words: ion irradiation, power device, crystal, thin film, functional materials



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Fig. 1.  (Color online) Schematic of the cross-section for electronic and nuclear stopping processes as a function of ion energy[12].

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Fig. 2.  (Color online) Magnetic properties after introducing hole compensation by ion irradiation. The ion fluence was increased in linear steps. (a), (c), and (d) show the temperature dependent magnetization for different samples, while (b) shows the magnetic hysteresis for sample Mn6ann (GaMnAs) for various ion fluences. The temperature-dependent magnetization is measured at a small field of 20 Oe after cooling in field. One observes an increase in the coercive field HC when TC and the remanent magnetization decrease. The arrows indicate the increase of DPA from 0 to 2.88 × 10−3. In each panel, the black line is the result for the nonirradiated sample. This figure is drawn from Ref. [16].

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Fig. 3.  (Color online) (a) Curie temperature (TC), (b) saturation magnetization (MS) as well as (c) coercive field (HC) for the magnetic easy axis at 5 K versus DPA for (Ga,Mn)As (squares), (In,Mn)As (circles) and (Ga,Mn)P (triangles)[17].

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Fig. 4.  (Color online) (a) Oscillating part of the resistivity ∆ρxx at 1.9 K for B∥c as a function of the inverse magnetic field 1/B for different irradiation doses. (b) Temperature dependence of the oscillation amplitude with solid lines representing the fits obtained using the equation of Eq. (2). Different symbols correspond to the analysis of different Landau levels (i.e., peaks at different 1/B positions). To compare the temperature dependence of different peaks, the oscillation amplitudes have been normalized to the value of the fit for 1/B → 0. (c) Cyclotron masses mc as function of the inverse oscillation period [∆(1/B)]–1. (d) Dingle plots at T = 1.9 K and inset showing the mean free path l as a function of irradiation doseQ[18].

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Fig. 5.  (Color online) Low-temperature variation of the London penetration depth Δλ(T) in a single crystal of NbxBi2Se3 for multiple values of cumulative irradiation dose vs reduced temperature squared (T/TC)2. The linear fits (red, black lines) indicate quadratic behavior. As the dose increases, the temperature dependence remains quadratic, indicative of point nodes in the superconducting gap. Data are offset vertically for clarity of presentation. The top axis shows the corresponding T/TC values[39].

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Fig. 6.  (Color online) DLTS spectra of 4H-SiC n-type epilayer irradiated with (a) fast neutrons, (b) 4.5 MeV electrons, (c) 670 keV protons, and (d) 9.6 MeV carbon ions. First temperature scan, rate window 4.1 s−1 (neutron, proton and carbon irradiation) and 56 s−1 (electrons) [44].

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Fig. 7.  (Color online) DLTS spectra of n-base of the 4H-SiC PiN diode measured before (black thin) and after (short-dashed) irradiation with 800 keV protons to a fluence of 5 × 109 cm–2 and after annealing at 370 °C (red thick)[59].

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Fig. 8.  (Color online) Reverse recovery of the 2 A/10 keV SiC PiN diode measured before (solid line) and after irradiation (dashed-dotted line) with 800 keV protons to a fluence of 1 × 1011 cm–1 and after subsequent 1 h annealing at 370 °C (dash line) [20].

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Fig. 9.  (Color online) Measured OCVD response of 4H-SiC PiN diodes irradiated with different fluences of 800 keV protons. The value of high-level lifetime τHL (extracted at t = 3 µs) for different irradiation fluences are shown in the inset[59].

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Fig. 10.  (Color online) Majority carrier DLTS spectra of P+PN–N+ diode measured after (a) He+ irradiation and (b) H+ and isochronal 40 min annealing at 220 and 350 °C, rate window 260 s–1 [69].

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Fig. 11.  (a) Current reverse recovery characteristics of diodes irradiated by 500 keV (3 × 1014 cm–2) and 4 MeV (2 × 1013 cm–2) electrons (solid thin) and H+/He2+ ions (fluence 5 × 1012 / 5 × 1011 cm–2, thick solid/dashed); (b) current (solid) and voltage (dashed) reverse recovery characteristics of the unirradiated diode and diodes irradiated by 4 MeV (2 × 1013 cm–2) electrons and H+ ions (fluence 5 × 1012 cm–2)[73].

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Fig. 12.  The reverse I–V curves measured at 30 °C of the unirradiated and not annealed device (Untreated), the irradiated double Al electrode devices with He energy of 11 MeV and dose of 1 × 1010 cm−2 (He irradiation), and the PtSi + Al electrode devices with He energy of 10 MeV and doses of 1 × 1012 and 1 × 1013 cm−2, both annealed at 700 °C for 20 min (Pt gettering)[76].

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Fig. 13.  Trade-off between the ON-state voltage drop at 100 A and the turn-OFF losses measured at (a) VDC = 500 V, JF = 1 A/cm2 and (b) JF = 50 A/cm2 for unirradiated and helium irradiated devices whose electrodes are PtSi and Al. The irradiation energies are 5.8 MeV (open squares) and 10 MeV (open circles) for the sample with PtSi anode and 7.1 MeV (solid squares) and 11 MeV (solid circles) for the sample with Al anode[75].

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Table 1.   Parameters for proton irradiation induced deep levels in n-type SiC.

LevelEnergy (eV)Ref.
T1EC – 0.17[20, 60]
EH1EC – 0.42[20, 59, 61, 62]
Z1/2EC – 0.66[20, 43, 50, 57, 59, 63]
EH3EC – 0.72[20, 44, 59, 62]
EH5EC – 0.80[49]
T2EC – 1.41[60]
EH6/7EC – 1.64[49, 64]
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Table 2.   Survey of deep level electron traps identified in proton and He irradiated silicon[69, 72].

LevelBandgap position (eV)Capture cross
section (cm2)		Identity
E1EC – 0.167σn = 4 × 10–15VO(–/0)+Ci–Cs (–/0)
E2EC – 0.213σn = 1 × 10–14? (H-related)
E3EC – 0.252σn = 7 × 10–15V2=/–
E4EC – 0.312σn = 4 × 10–15VO–H
E5EC – 0.436σn = 3 × 10–15V2–/0
E6EC – 0.463σn = 2 × 10–16H-related (V2H)
E7EC – 0.507σn = 6 × 10–17? (H-related)
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    Received: 17 November 2021 Revised: 05 March 2022 Online: Accepted Manuscript: 10 May 2022Uncorrected proof: 12 May 2022Published: 06 June 2022

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      Article Navigation >  Journal of Semiconductors  > 2022  >  43(6): 063101
      Ye Yuan, Shengqiang Zhou, Xinqiang Wang. Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices[J]. Journal of Semiconductors, 2022, 43(6): 063101. doi: 10.1088/1674-4926/43/6/063101 ****Y Yuan, S Q Zhou, X Q Wang. Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices[J]. J. Semicond, 2022, 43(6): 063101. doi: 10.1088/1674-4926/43/6/063101
      Citation:
      Ye Yuan, Shengqiang Zhou, Xinqiang Wang. Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices[J]. Journal of Semiconductors, 2022, 43(6): 063101. doi: 10.1088/1674-4926/43/6/063101 ****
      Y Yuan, S Q Zhou, X Q Wang. Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices[J]. J. Semicond, 2022, 43(6): 063101. doi: 10.1088/1674-4926/43/6/063101
      shu

      Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices

      DOI: 10.1088/1674-4926/43/6/063101
      • 1.

        Songshan Lake Materials Laboratory, Dongguan 523808, China

      • 2.

        Institute of Ion Beam Physics and Material Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany

      • 3.

        Dongguan Institute of Optoelectronics, Peking University, Dongguan 523808, China

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      • Ye Yuan：got his BS and MS degrees from the Harbin Institute of Technology in 2011 and 2013, respectively. Afterwards, he got a PhD from Technische Universität Dresden in 2017. Then he joined Helmholtz-Zentrum Dresden- Rossendorf and King Abdullah University of Science and Technology as postdoc in 2017 and 2018, respectively. In 2019, he joined Songshan Lake Materials Laboratory as an associate investigator. His research mainly focuses on the growth and physics in wide bandgap semiconductors, as well as the application of ion beam in semiconductors
      • Shengqiang Zhou：is the “Semiconductor Materials” department head at Helmholtz-Zentrum Dresden-Rossendorf, Germany. He got his BSc and MSc degree from Peking University and PhD degree from Technische Universität Dresden. His current research interests include III-V:Mn magnetic semiconductors synthesized by ion implantation and pulsed laser annealing, hyperdoing semiconductors by ion implantation, defect engineering by ion irradiation and Ion beam analysis. As the principal investigator, he has acquired 4 DFG projects and 3 Helmholtz Association Research Programs
      • Xinqiang Wang：is a full Professor of School of Physics at Peking University. He joined the faculty on May 2008, after more than 6 years’ postdoctoral research at Chiba University and Japan Science Technology Agency, Japan. He has received the China National Funds for Distinguished Young Scientists in 2012 and has been awarded Changjiang Distinguished Professor by Ministry of Education in 2014. He mainly concentrates on III-nitrides compound semiconductors including epitaxy and device fabrication. He is the author or co-author of 200+ refereed journal articles with over 3800 citations and has delivered over 40 invited talks at scientific conferences and contributed three chapters in three books
      • Corresponding author: yuanye@sslab.org.cn; wangshi@pku.edu.cn
      • Received Date: 2021-11-17
      • Revised Date: 2022-03-05
        • Available Online: 2022-05-10

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