Citation: |
Jun Zhang, Zhongming Wei. Preface to Special Topic on Twisted van der Waals Heterostructures[J]. Journal of Semiconductors, 2023, 44(1): 010101. doi: 10.1088/1674-4926/44/1/010101
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J Zhang, Z M Wei. Preface to Special Topic on Twisted van der Waals Heterostructures[J]. J. Semicond, 2023, 44(1): 010101. doi: 10.1088/1674-4926/44/1/010101
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Preface to Special Topic on Twisted van der Waals Heterostructures
DOI: 10.1088/1674-4926/44/1/010101
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References
[1] Huang X Y, Han X, Dai Y Y, et al. Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices. J Semicond, 2023, 44, 011901 doi: 10.1088/1674-4926/44/1/011901[2] Li Z Y, Lai J M, Zhang J. Review of phonons in moiré superlattices. J Semicond, 2023, 44, 011902 doi: 10.1088/1674-4926/44/1/011902[3] Gao Y C, Ye Y. Interaction of moiré excitons with cavity photons in two-dimensional semiconductor hetero-bilayers. J Semicond, 2023, 44, 011903 doi: 10.1088/1674-4926/44/2/011903[4] Li H, Ling J Y, Lin J M, et al. Interface engineering in two-dimensional heterostructures towards novel emitters. J Semicond, 2023, 44, 011001 doi: 10.1088/1674-4926/44/1/011001[5] Zhang X H, Peng B. The twisted two-dimensional ferroelectrics. J Semicond, 2023, 44, 011002 doi: 10.1088/16744926/44/2/011002[6] Zhao S W, Shao G L, Han Z V, et al. Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40-degree-twisted bilayer WS2. J Semicond, 2023, 44, 012001 doi: 10.1088/1674-4926/44/1/012001[7] Lu X. Single photon emitters originating from donor–acceptor pairs. J Semicond, 2023, 44, 010401 doi: 10.1088/1674-4926/44/1/010401[8] Tan Q H, Lai J M, Liu X L, et al. Donor-acceptor pair quantum emitters in hexagonal boron nitride. Nano Lett, 2022, 22, 1331 doi: 10.1021/acs.nanolett.1c04647[9] Chen M Y, Chen F Q, Cheng B, et al. Moiré heterostructures: highly tunable platforms for quantum simulation and future computing. J Semicond, 2023, 44, 010301 doi: 10.1088/16744926/44/2/010301 -
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