Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

Danlu Liu; Ming Li; Tang Xu; Jie Dong; Yuming Fang; Yue Xu

doi:10.1088/1674-4926/44/11/114102

J. Semicond. > 2023, Volume 44 > Issue 11 > 114102

ARTICLES

Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

Danlu Liu¹, Ming Li¹, Tang Xu¹, Jie Dong¹, Yuming Fang^{1, 2} and Yue Xu^{1, 2,}

+ Author Affiliations

Corresponding author: Yue Xu, yuex@njupt.edu.cn

DOI: 10.1088/1674-4926/44/11/114102

Abstract: The influence of the virtual guard ring width (GRW) on the performance of the p-well/deep n-well single-photon avalanche diode (SPAD) in a 180 nm standard CMOS process was investigated. TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1 μm. It is experimentally found that, compared with an SPAD with GRW = 2 μm, the dark count rate (DCR) and afterpulsing probability (AP) of the SPAD with GRW = 1 μm is significantly increased by 2.7 times and twofold, respectively, meanwhile, its photon detection probability (PDP) is saturated and hard to be promoted at over 2 V excess bias voltage. Although the fill factor (FF) can be enlarged by reducing GRW, the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling (TAT) effect in the 1 μm guard ring region. By comparison, the SPAD with GRW = 2 μm can achieve a better trade-off between the FF and noise performance. Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.

Key words: single-photon avalanche diode (SPAD), virtual guard ring, dark count rate (DCR), photon detection probability (PDP), afterpulsing probability (AP)

References

[1]	Henderson R K, Johnston N, Chen H C, et al. A 192 × 128 time correlated single photon counting imager in 40nm CMOS technology. ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, 54 doi: 10.1109/ESSCIRC.2018.8494330
[2]	Ma Z Q, Wu Z, Xu Y. Compact SPAD pixels with fast and accurate photon counting in the analog domain. J Semicond, 2021, 42, 052402 doi: 10.1088/1674-4926/42/5/052402
[3]	Dieguez A, Canals J, Franch N, et al. A compact analog histogramming SPAD-based CMOS chip for time-resolved fluorescence. IEEE Trans Biomed Circuits Syst, 2019, 13, 343 doi: 10.1109/TBCAS.2019.2892825
[4]	Moreno-García M, Xu H S, Gasparini L, et al. Low-noise single photon avalanche diodes in a 110nm CIS technology. 2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, 94 doi: 10.1109/ESSDERC.2018.8486883
[5]	Veerappan C, Charbon E. A substrate isolated CMOS SPAD enabling wide spectral response and low electrical crosstalk. IEEE J Sel Top Quantum Electron, 2014, 20, 299 doi: 10.1109/JSTQE.2014.2318436
[6]	Vornicu I, López-Martínez J M, Bandi F N, et al. Design of high-efficiency SPADs for LiDAR applications in 110nm CIS technology. IEEE Sens J, 2021, 21, 4776 doi: 10.1109/JSEN.2020.3032106
[7]	Sanzaro M, Gattari P, Villa F, et al. Single-photon avalanche diodes in a 0.16 μm BCD technology with sharp timing response and red-enhanced sensitivity. IEEE J Sel Top Quantum Electron, 2017, 24, 1 doi: 10.1109/JSTQE.2017.2762464
[8]	Niclass C, Gersbach M, Henderson R, et al. A single photon avalanche diode implemented in 130-nm CMOS technology. IEEE J Sel Top Quantum Electron, 2007, 13, 863 doi: 10.1109/JSTQE.2007.903854
[9]	Lee M J, Sun P F, Pandraud G, et al. First near-ultraviolet- and blue-enhanced backside-illuminated single-photon avalanche diode based on standard SOI CMOS technology. IEEE J Sel Top Quantum Electron, 2019, 25, 1 doi: 10.1109/JSTQE.2019.2918930
[10]	Lu X, Law M K, Jiang Y, et al. A 4-μm diameter SPAD using less-doped N-well guard ring in baseline 65-nm CMOS. IEEE Trans Electron Devices, 2020, 67, 2223 doi: 10.1109/TED.2020.2982701
[11]	Liu Y, Liu M L, Ma R, et al. A wide spectral response single photon avalanche diode for backside-illumination in 55-nm CMOS process. IEEE Trans Electron Devices, 2022, 69, 5041 doi: 10.1109/TED.2022.3194488
[12]	Richardson J A, Webster E A G, Grant L A, et al. Scaleable single-photon avalanche diode structures in nanometer CMOS technology. IEEE Trans Electron Devices, 2011, 58, 2028 doi: 10.1109/TED.2011.2141138
[13]	Jiang W, Chalich Y, Scott R, et al. Time-gated and multi-junction SPADs in standard 65 nm CMOS technology. IEEE Sens J, 2021, 21, 12092 doi: 10.1109/JSEN.2021.3063319
[14]	Sicre M, Agnew M, Buj C, et al. Dark count rate in single-photon avalanche diodes: Characterization and modeling study. ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, 143 doi: 10.1109/ESSDERC53440.2021.9631797
[15]	Kindt W, Zeijl H. Modelling and fabrication of Geiger mode avalanche photodiodes. IEEE Trans Nucl Sci, 1998, 45, 715 doi: 10.1109/23.682621
[16]	Hurkx G A M, Klaassen D, Knuvers M. A new recombination model for device simulation including tunneling. IEEE Trans Electron Devices, 1992, 39, 331 doi: 10.1109/16.121690
[17]	Vornicu I, Bandi F, Carmona-Galán R, et al. Low-noise and high-efficiency near-IR SPADs in 110nm CIS technology. ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC), 2019, 250 doi: 10.1109/ESSDERC.2019.8901757
[18]	Palubiak D P, Deen M J. CMOS SPADs: Design issues and research challenges for detectors, circuits, and arrays. IEEE J Sel Top Quantum Electron, 2014, 20, 409 doi: 10.1109/JSTQE.2014.2344034
[19]	Webster E A, Grant L A, Henderson R K. A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology. IEEE Electron Device Lett, 2012, 33, 1589 doi: 10.1109/LED.2012.2214760
[20]	Xu Y, Xiang P, Xie X P, et al. A new modeling and simulation method for important statistical performance prediction of single photon avalanche diode detectors. Semicond Sci Technol, 2016, 31, 065024 doi: 10.1088/0268-1242/31/6/065024
[21]	Mandai S, Fishburn M W, Maruyama Y, et al. A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology. Opt Express, 2012, 20, 5849 doi: 10.1364/OE.20.005849

Fig. 1. (Color online) (a) Schematic cross-section of the p-well/deep n-well SPAD. (b) TCAD simulation of the reverse I−V characteristics.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) TCAD simulation of the electric field for devices with guard ring width (a–c) GRW = 1, 2, 3 μm.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) TCAD simulation of electric field strength extracted at Y = 0.52 μm. (b) Drift path of minority electrons in the guard ring. (c) TCAD simulation of total current density extracted at Y = 0.52 μm.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Micrograph of SPADs with GRW = 1 and 2 μm fabricated in a 180 nm standard CMOS technology.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) Experimental setup for photon counting. (b) Measured reverse I−V characteristics of SPADs with two guard ring widths.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) Variations of DCR (a) with V_ex at room temperature (T = 290 K) and (b) with the temperature at the excess bias of 2 V.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) Measured PDP of SPADs at different excess bias voltages.

DownLoad: Full-Size Img PowerPoint

Fig. 8. (Color online) Measured AP of SPADs at different excess bias voltages.

DownLoad: Full-Size Img PowerPoint

[1]	Henderson R K, Johnston N, Chen H C, et al. A 192 × 128 time correlated single photon counting imager in 40nm CMOS technology. ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, 54 doi: 10.1109/ESSCIRC.2018.8494330
[2]	Ma Z Q, Wu Z, Xu Y. Compact SPAD pixels with fast and accurate photon counting in the analog domain. J Semicond, 2021, 42, 052402 doi: 10.1088/1674-4926/42/5/052402
[3]	Dieguez A, Canals J, Franch N, et al. A compact analog histogramming SPAD-based CMOS chip for time-resolved fluorescence. IEEE Trans Biomed Circuits Syst, 2019, 13, 343 doi: 10.1109/TBCAS.2019.2892825
[4]	Moreno-García M, Xu H S, Gasparini L, et al. Low-noise single photon avalanche diodes in a 110nm CIS technology. 2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, 94 doi: 10.1109/ESSDERC.2018.8486883
[5]	Veerappan C, Charbon E. A substrate isolated CMOS SPAD enabling wide spectral response and low electrical crosstalk. IEEE J Sel Top Quantum Electron, 2014, 20, 299 doi: 10.1109/JSTQE.2014.2318436
[6]	Vornicu I, López-Martínez J M, Bandi F N, et al. Design of high-efficiency SPADs for LiDAR applications in 110nm CIS technology. IEEE Sens J, 2021, 21, 4776 doi: 10.1109/JSEN.2020.3032106
[7]	Sanzaro M, Gattari P, Villa F, et al. Single-photon avalanche diodes in a 0.16 μm BCD technology with sharp timing response and red-enhanced sensitivity. IEEE J Sel Top Quantum Electron, 2017, 24, 1 doi: 10.1109/JSTQE.2017.2762464
[8]	Niclass C, Gersbach M, Henderson R, et al. A single photon avalanche diode implemented in 130-nm CMOS technology. IEEE J Sel Top Quantum Electron, 2007, 13, 863 doi: 10.1109/JSTQE.2007.903854
[9]	Lee M J, Sun P F, Pandraud G, et al. First near-ultraviolet- and blue-enhanced backside-illuminated single-photon avalanche diode based on standard SOI CMOS technology. IEEE J Sel Top Quantum Electron, 2019, 25, 1 doi: 10.1109/JSTQE.2019.2918930
[10]	Lu X, Law M K, Jiang Y, et al. A 4-μm diameter SPAD using less-doped N-well guard ring in baseline 65-nm CMOS. IEEE Trans Electron Devices, 2020, 67, 2223 doi: 10.1109/TED.2020.2982701
[11]	Liu Y, Liu M L, Ma R, et al. A wide spectral response single photon avalanche diode for backside-illumination in 55-nm CMOS process. IEEE Trans Electron Devices, 2022, 69, 5041 doi: 10.1109/TED.2022.3194488
[12]	Richardson J A, Webster E A G, Grant L A, et al. Scaleable single-photon avalanche diode structures in nanometer CMOS technology. IEEE Trans Electron Devices, 2011, 58, 2028 doi: 10.1109/TED.2011.2141138
[13]	Jiang W, Chalich Y, Scott R, et al. Time-gated and multi-junction SPADs in standard 65 nm CMOS technology. IEEE Sens J, 2021, 21, 12092 doi: 10.1109/JSEN.2021.3063319
[14]	Sicre M, Agnew M, Buj C, et al. Dark count rate in single-photon avalanche diodes: Characterization and modeling study. ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, 143 doi: 10.1109/ESSDERC53440.2021.9631797
[15]	Kindt W, Zeijl H. Modelling and fabrication of Geiger mode avalanche photodiodes. IEEE Trans Nucl Sci, 1998, 45, 715 doi: 10.1109/23.682621
[16]	Hurkx G A M, Klaassen D, Knuvers M. A new recombination model for device simulation including tunneling. IEEE Trans Electron Devices, 1992, 39, 331 doi: 10.1109/16.121690
[17]	Vornicu I, Bandi F, Carmona-Galán R, et al. Low-noise and high-efficiency near-IR SPADs in 110nm CIS technology. ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC), 2019, 250 doi: 10.1109/ESSDERC.2019.8901757
[18]	Palubiak D P, Deen M J. CMOS SPADs: Design issues and research challenges for detectors, circuits, and arrays. IEEE J Sel Top Quantum Electron, 2014, 20, 409 doi: 10.1109/JSTQE.2014.2344034
[19]	Webster E A, Grant L A, Henderson R K. A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology. IEEE Electron Device Lett, 2012, 33, 1589 doi: 10.1109/LED.2012.2214760
[20]	Xu Y, Xiang P, Xie X P, et al. A new modeling and simulation method for important statistical performance prediction of single photon avalanche diode detectors. Semicond Sci Technol, 2016, 31, 065024 doi: 10.1088/0268-1242/31/6/065024
[21]	Mandai S, Fishburn M W, Maruyama Y, et al. A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology. Opt Express, 2012, 20, 5849 doi: 10.1364/OE.20.005849

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Received: 31 March 2022 Revised: 14 June 2023 Online: Accepted Manuscript: 28 August 2023Uncorrected proof: 20 October 2023Published: 10 November 2023

Article Navigation > Journal of Semiconductors > 2023 > 44(11): 114102

Danlu Liu, Ming Li, Tang Xu, Jie Dong, Yuming Fang, Yue Xu. Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology[J]. Journal of Semiconductors, 2023, 44(11): 114102. doi: 10.1088/1674-4926/44/11/114102 ****Danlu Liu, Ming Li, Tang Xu, Jie Dong, Yuming Fang, Yue Xu, Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology[J]. Journal of Semiconductors, 2023, 44(11), 114102 doi: 10.1088/1674-4926/44/11/114102

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Danlu Liu, Ming Li, Tang Xu, Jie Dong, Yuming Fang, Yue Xu, Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology[J]. Journal of Semiconductors, 2023, 44(11), 114102 doi: 10.1088/1674-4926/44/11/114102

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Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

DOI: 10.1088/1674-4926/44/11/114102

Danlu Liu¹,
Ming Li¹,
Tang Xu¹,
Jie Dong¹,
Yuming Fang^{1, 2},
Yue Xu^{1, 2,}

1.
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2.
National and Local Joint Engineering Laboratory of RF Integration & Micro-Assembly Technology, Nanjing 210023, China

More Information

Danlu Liu：received a bachelor’s degree in electronic science and technology from Nanjing University of Posts and Telecommunications, Nanjing, China, in 2021. She is currently pursuing a master’s degree with the Nanjing University of Posts and Telecommunications, Nanjing, China
Yue Xu：received a PhD degree in microelectronics and solid-state electronics from Nanjing University, China, in 2012. He is currently a professor with the Nanjing University of Posts and Telecommunications, Nanjing, China. His main research interests include the CMOS detector, analog-integrated circuit design and device reliability
Corresponding author: yuex@njupt.edu.cn
Received Date: 2022-03-31
Revised Date: 2023-06-14

Available Online: 2023-08-28

Abstract

Abstract

The influence of the virtual guard ring width (GRW) on the performance of the p-well/deep n-well single-photon avalanche diode (SPAD) in a 180 nm standard CMOS process was investigated. TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1 μm. It is experimentally found that, compared with an SPAD with GRW = 2 μm, the dark count rate (DCR) and afterpulsing probability (AP) of the SPAD with GRW = 1 μm is significantly increased by 2.7 times and twofold, respectively, meanwhile, its photon detection probability (PDP) is saturated and hard to be promoted at over 2 V excess bias voltage. Although the fill factor (FF) can be enlarged by reducing GRW, the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling (TAT) effect in the 1 μm guard ring region. By comparison, the SPAD with GRW = 2 μm can achieve a better trade-off between the FF and noise performance. Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.
- single-photon avalanche diode (SPAD),
- virtual guard ring,
- dark count rate (DCR),
- photon detection probability (PDP),
- afterpulsing probability (AP)

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References(21)

References

[1]	Henderson R K, Johnston N, Chen H C, et al. A 192 × 128 time correlated single photon counting imager in 40nm CMOS technology. ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, 54 doi: 10.1109/ESSCIRC.2018.8494330
[2]	Ma Z Q, Wu Z, Xu Y. Compact SPAD pixels with fast and accurate photon counting in the analog domain. J Semicond, 2021, 42, 052402 doi: 10.1088/1674-4926/42/5/052402
[3]	Dieguez A, Canals J, Franch N, et al. A compact analog histogramming SPAD-based CMOS chip for time-resolved fluorescence. IEEE Trans Biomed Circuits Syst, 2019, 13, 343 doi: 10.1109/TBCAS.2019.2892825
[4]	Moreno-García M, Xu H S, Gasparini L, et al. Low-noise single photon avalanche diodes in a 110nm CIS technology. 2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, 94 doi: 10.1109/ESSDERC.2018.8486883
[5]	Veerappan C, Charbon E. A substrate isolated CMOS SPAD enabling wide spectral response and low electrical crosstalk. IEEE J Sel Top Quantum Electron, 2014, 20, 299 doi: 10.1109/JSTQE.2014.2318436
[6]	Vornicu I, López-Martínez J M, Bandi F N, et al. Design of high-efficiency SPADs for LiDAR applications in 110nm CIS technology. IEEE Sens J, 2021, 21, 4776 doi: 10.1109/JSEN.2020.3032106
[7]	Sanzaro M, Gattari P, Villa F, et al. Single-photon avalanche diodes in a 0.16 μm BCD technology with sharp timing response and red-enhanced sensitivity. IEEE J Sel Top Quantum Electron, 2017, 24, 1 doi: 10.1109/JSTQE.2017.2762464
[8]	Niclass C, Gersbach M, Henderson R, et al. A single photon avalanche diode implemented in 130-nm CMOS technology. IEEE J Sel Top Quantum Electron, 2007, 13, 863 doi: 10.1109/JSTQE.2007.903854
[9]	Lee M J, Sun P F, Pandraud G, et al. First near-ultraviolet- and blue-enhanced backside-illuminated single-photon avalanche diode based on standard SOI CMOS technology. IEEE J Sel Top Quantum Electron, 2019, 25, 1 doi: 10.1109/JSTQE.2019.2918930
[10]	Lu X, Law M K, Jiang Y, et al. A 4-μm diameter SPAD using less-doped N-well guard ring in baseline 65-nm CMOS. IEEE Trans Electron Devices, 2020, 67, 2223 doi: 10.1109/TED.2020.2982701
[11]	Liu Y, Liu M L, Ma R, et al. A wide spectral response single photon avalanche diode for backside-illumination in 55-nm CMOS process. IEEE Trans Electron Devices, 2022, 69, 5041 doi: 10.1109/TED.2022.3194488
[12]	Richardson J A, Webster E A G, Grant L A, et al. Scaleable single-photon avalanche diode structures in nanometer CMOS technology. IEEE Trans Electron Devices, 2011, 58, 2028 doi: 10.1109/TED.2011.2141138
[13]	Jiang W, Chalich Y, Scott R, et al. Time-gated and multi-junction SPADs in standard 65 nm CMOS technology. IEEE Sens J, 2021, 21, 12092 doi: 10.1109/JSEN.2021.3063319
[14]	Sicre M, Agnew M, Buj C, et al. Dark count rate in single-photon avalanche diodes: Characterization and modeling study. ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, 143 doi: 10.1109/ESSDERC53440.2021.9631797
[15]	Kindt W, Zeijl H. Modelling and fabrication of Geiger mode avalanche photodiodes. IEEE Trans Nucl Sci, 1998, 45, 715 doi: 10.1109/23.682621
[16]	Hurkx G A M, Klaassen D, Knuvers M. A new recombination model for device simulation including tunneling. IEEE Trans Electron Devices, 1992, 39, 331 doi: 10.1109/16.121690
[17]	Vornicu I, Bandi F, Carmona-Galán R, et al. Low-noise and high-efficiency near-IR SPADs in 110nm CIS technology. ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC), 2019, 250 doi: 10.1109/ESSDERC.2019.8901757
[18]	Palubiak D P, Deen M J. CMOS SPADs: Design issues and research challenges for detectors, circuits, and arrays. IEEE J Sel Top Quantum Electron, 2014, 20, 409 doi: 10.1109/JSTQE.2014.2344034
[19]	Webster E A, Grant L A, Henderson R K. A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology. IEEE Electron Device Lett, 2012, 33, 1589 doi: 10.1109/LED.2012.2214760
[20]	Xu Y, Xiang P, Xie X P, et al. A new modeling and simulation method for important statistical performance prediction of single photon avalanche diode detectors. Semicond Sci Technol, 2016, 31, 065024 doi: 10.1088/0268-1242/31/6/065024
[21]	Mandai S, Fishburn M W, Maruyama Y, et al. A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology. Opt Express, 2012, 20, 5849 doi: 10.1364/OE.20.005849

Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology

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