Preparation of Sn-doped Ga<sub>2</sub>O<sub>3</sub> thin films and their solar-blind photoelectric detection performance

Lijun Li; Chengkun Li; Shaoqing Wang; Qin Lu; Yifan Jia; Haifeng Chen

doi:10.1088/1674-4926/44/6/062805

J. Semicond. > 2023, Volume 44 > Issue 6 > 062805

ARTICLES

Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Lijun Li, Chengkun Li, Shaoqing Wang, Qin Lu, Yifan Jia and Haifeng Chen

+ Author Affiliations

Corresponding author: Lijun Li, lilijun007@163.com

DOI: 10.1088/1674-4926/44/6/062805

Abstract: Sn doping is an effective way to improve the response rate of Ga₂O₃ film based solar-blind detectors. In this paper, Sn-doped Ga₂O₃ films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga₂O₃ films changed from amorphous to β-Ga₂O₃ after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm. The β-Ga₂O₃ had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm. The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga₂O₃ thin film annealed in N₂ has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA, the photo dark current ratio is 1.7 × 10⁶, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10³%, the specific detection rate is 2.61 × 10¹² Jones, the response time and recovery time are 378 and 90 ms, respectively.

Key words: Sn doped Ga₂O₃, RF magnetron sputtering, solar-blind photodetector

References

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Fig. 1. (Color online) Schematic diagram of solar-blind photodetector with MSM structure.

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Fig. 2. (Color online) XRD spectrum of Ga₂O₃ films.

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Fig. 3. (Color online) SEM of Ga₂O₃ thin films: (a) unannealed, (b) annealed in nitrogen, (c) annealed in air. (d) EDS spectra of Ga₂O₃ thin films.

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Fig. 4. (Color online) The XPS analysis for the Ga₂O₃ thin films: (a) survey peaks, (b) Ga 3d spectra, (c) Sn 3d spectra, and (d) O 1s spectra.

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Fig. 5. (Color online) (a) Transmission spectra of Ga₂O₃ thin films. (b) The plot of (αhν)²–hν.

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Fig. 6. (Color online) (a) I–V curve in dark condition. (b) I–V curve at 254 nm wavelength illumination. (c) I–V curve at 365 nm wavelength illumination of Ga₂O₃ thin films.

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Fig. 7. (Color online) Photocurrent at 254, 365 nm illumination and dark current logarithmic curves of Ga₂O₃ thin films: (a) unannealed, (b) annealed in nitrogen, (c) annealed in air.

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Fig. 8. (Color online) I–t curves of Ga₂O₃ solar-blind photoelectric devices: (a) unannealed, (b) annealed in nitrogen, (c) annealed in air, (d) unannealed (part of (a)), (e) annealed in nitrogen (part of (b)), (f) annealed in air ((part of (c)).

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Fig. 9. (Color online) Curve of photo-dark current ratio (PDCR) changing with bias voltage.

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Table 1. Key parameters of Ga₂O₃ thin film photoelectric detector.

Material	Structure	PDCR	R (A/W)	EQE (%)	D* (Jones)	τ_r/τ_d	Ref.
Ni/Au/β-Ga₂O₃	MSM	10³	1.4 × 10⁻³	0.5	2.0 × 10¹²	1.1 s/0.3 s	[36]
Au/β-Ga₂O₃/Si	MSM	6.13	96.13	4.77 × 10⁴	–	32 ms/78 ms	[37]
Ni/Au/β-Ga₂O₃/Ti/Au	MSM	10⁴	9.78	4.25 × 10³	3.92 × 10¹⁴	5.19 μs	[38]
Au/Graphene/β-Ga₂O₃/In	MSM	–	6.1	2.98 × 10³	–	0.62 s/0.67 s	[39]
Graphene/β-Ga₂O₃ wafer	MSM	2.28 × 10²	0.01	5	–	30 ns/2.24 μs	[40]
α/β-Ga₂O₃ NRAS	PEC	2.0 × 10³	2.6 × 10⁻⁴	–	2.8 × 10⁹	0.54 s/1.63 s	[41]
β-Ga₂O₃ NRAS	PEC	28.97	3.8 × 10⁻³	1.86		0.29 s/0.16 s	[42]
LIG(Graphene)/Ga₂O₃	–	3.72 × 10³	0.043	–	6.73 × 10¹²	0.4 s/0.06 s	[43]
Ti/Au/β-Ga₂O₃	MSM	510	0.06	28.3	–	2.92 s/2.97 s	[44]
Ti/Au/β-Ga₂O₃	MSM	773	91.9	–	7.2 × 10¹³	5.4 s/2.1 s	[45]
Au/β-Ga₂O₃/Au	MSM	1.6 × 10³	18.23	–	–	0.44 s/0.72 s	[46]
α-Ga₂O₃/Cu₂O	PEC	–	4.2 × 10⁻⁴	–	–	10.3 s/10.1 s	[47]
	MSM@Unannealed	4.21 × 10⁵	1.86	9.08 × 10²	4.94 × 10¹¹	0.54 s/0.6 s
β-Ga₂O₃ thin films	MSM@N₂ annealed	1.75 × 10⁶	12.47	6.09 × 10³	2.61 × 10¹²	0.37 s/0.09 s	This work
	MSM@Air annealed	9.44 × 10⁵	8.56	4.18 × 10³	1.59 × 10¹²	0.39 s/0.12 s

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[34]	Li Z M, Jiao T, Li W C, et al. Solar-blind ultraviolet photodetectors based on homoepitaxial β-Ga₂O₃ films. Opt Mater, 2021, 122, 111665 doi: 10.1016/j.optmat.2021.111665
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[36]	Pratiyush A S, Krishnamoorthy S, Kumar S, et al. Demonstration of zero bias responsivity in MBE grown β-Ga₂O₃ lateral deep-UV photodetector. Jpn J Appl Phys, 2018, 57, 060313 doi: 10.7567/JJAP.57.060313
[37]	Arora K, Goel N, Kumar M, et al. Ultrahigh performance of self-powered β-Ga₂O₃ thin film solar-blind photodetector grown on cost-effective Si substrate using high-temperature seed layer. ACS Photonics, 2018, 5, 2391 doi: 10.1021/acsphotonics.8b00174
[38]	Xu Y, Chen X H, Zhang Y F, et al. Fast speed Ga₂O₃ solar-blind Schottky photodiodes with large sensitive area. IEEE Electron Device Lett, 2020, 41, 997 doi: 10.1109/LED.2020.2998804
[39]	Kalita G, Mahyavanshi R D, Desai P, et al. Photovoltaic action in graphene –Ga ₂O₃ heterojunction with deep-ultraviolet irradiation. Phys Status Solidi R, 2018, 12, 1800198 doi: 10.1002/pssr.201800198
[40]	Chen M Z, Ma J G, Li P, et al. Zero-biased deep ultraviolet photodetectors based on graphene/cleaved (100) Ga₂O₃ heterojunction. Opt Express, 2019, 27, 8717 doi: 10.1364/OE.27.008717
[41]	Wu C, He C, Guo D, et al. Vertical α/β-Ga₂O₃ phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors. Mater Today Phys, 2020, 12, 100193 doi: 10.1016/j.mtphys.2020.100193
[42]	Chen K, Wang S L, He C R, et al. Photoelectrochemical self-powered solar-blind photodetectors based on Ga₂O₃ nanorod array/electrolyte solid/liquid heterojunctions with a large separation interface of photogenerated carriers. ACS Appl Nano Mater, 2019, 2, 6169 doi: 10.1021/acsanm.9b00992
[43]	Wu C, Wu F M, Hu H Z, et al. Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors. Appl Phys Lett, 2022, 120, 101102 doi: 10.1063/5.0080855
[44]	Huang L, Feng Q, Han G Q, et al. Comparison study of β-Ga₂O₃ photodetectors grown on sapphire at different oxygen pressures. IEEE Photonics J, 2017, 9, 1 doi: 10.1109/JPHOT.2017.2731625
[45]	Liu X Z, Liu Q, Zhao B W, et al. Comparison of β-Ga₂O₃ thin films grown on r-plane and c-plane sapphire substrates. Vacuum, 2020, 178, 109435 doi: 10.1016/j.vacuum.2020.109435
[46]	Wang Q L, Chen J, Huang P, et al. Influence of growth temperature on the characteristics of β-Ga₂O₃ epitaxial films and related solar-blind photodetectors. Appl Surf Sci, 2019, 489, 101 doi: 10.1016/j.apsusc.2019.05.328
[47]	He C R, Guo D Y, Chen K, et al. α-Ga₂O₃ nanorod array–Cu₂O microsphere p–n junctions for self-powered spectrum-distinguishable photodetectors. ACS Appl Nano Mater, 2019, 2, 4095 doi: 10.1021/acsanm.9b00527
[48]	Guo D, Chen K, Wang S, et al. Self-powered solar-blind photodetectors based on α/β phase junction of Ga₂O₃. Phys Rev Appl, 2020, 13, 024051 doi: 10.1103/PhysRevApplied.13.024051
[49]	Wu C, Wu F M, Hu H Z, et al. Review of self-powered solar-blind photodetectors based on Ga₂O₃. Mater Today Phys, 2022, 28, 100883 doi: 10.1016/j.mtphys.2022.100883
[50]	Kaur D, Kumar M. A strategic review on gallium oxide based deep-ultraviolet photodetectors: Recent progress and future prospects. Adv Optical Mater, 2021, 9, 2002160 doi: 10.1002/adom.202002160

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Received: 19 November 2022 Revised: 21 February 2023 Online: Accepted Manuscript: 09 March 2023Uncorrected proof: 09 March 2023Corrected proof: 22 May 2023Published: 08 June 2023

Article Navigation > Journal of Semiconductors > 2023 > 44(6): 062805

Lijun Li, Chengkun Li, Shaoqing Wang, Qin Lu, Yifan Jia, Haifeng Chen. Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance[J]. Journal of Semiconductors, 2023, 44(6): 062805. doi: 10.1088/1674-4926/44/6/062805 ****L J Li, C K Li, S Q Wang, Q Lu, Y F Jia, H F Chen. Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance[J]. J. Semicond, 2023, 44(6): 062805. doi: 10.1088/1674-4926/44/6/062805

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Lijun Li, Chengkun Li, Shaoqing Wang, Qin Lu, Yifan Jia, Haifeng Chen. Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance[J]. Journal of Semiconductors, 2023, 44(6): 062805. doi: 10.1088/1674-4926/44/6/062805 ****

L J Li, C K Li, S Q Wang, Q Lu, Y F Jia, H F Chen. Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance[J]. J. Semicond, 2023, 44(6): 062805. doi: 10.1088/1674-4926/44/6/062805

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Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

DOI: 10.1088/1674-4926/44/6/062805

Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, China

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Lijun Li：got her PhD degree in 2010 at East China Normal University. Then she joined Xi’an University of Post and Telecommunications. Her reaserch focuses on semiconductor thin film materials, photoelectric detectors and power devices
Corresponding author: lilijun007@163.com
Received Date: 2022-11-19
Revised Date: 2023-02-21

Available Online: 2023-03-09

Abstract

Abstract

Sn doping is an effective way to improve the response rate of Ga₂O₃ film based solar-blind detectors. In this paper, Sn-doped Ga₂O₃ films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga₂O₃ films changed from amorphous to β-Ga₂O₃ after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm. The β-Ga₂O₃ had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm. The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga₂O₃ thin film annealed in N₂ has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA, the photo dark current ratio is 1.7 × 10⁶, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10³%, the specific detection rate is 2.61 × 10¹² Jones, the response time and recovery time are 378 and 90 ms, respectively.
- Sn doped Ga₂O₃,
- RF magnetron sputtering,
- solar-blind photodetector

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References

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Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Author Bio:

Lijun Li got her PhD degree in 2010 at East China Normal University. Then she joined Xi’an University of Post and Telecommunications. Her reaserch focuses on semiconductor thin film materials, photoelectric detectors and power devices.

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Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

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Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance

Author Bio: Lijun Li got her PhD degree in 2010 at East China Normal University. Then she joined Xi’an University of Post and Telecommunications. Her reaserch focuses on semiconductor thin film materials, photoelectric detectors and power devices.

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Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance

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Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Author Bio:

Lijun Li got her PhD degree in 2010 at East China Normal University. Then she joined Xi’an University of Post and Telecommunications. Her reaserch focuses on semiconductor thin film materials, photoelectric detectors and power devices.

Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance