J. Semicond. > 2023, Volume 44 > Issue 7 > 070101

EDITORIAL

Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)

Shibing Long1, , Genquan Han2, , Yuhao Zhang3, , Yibo Wang4, and Zhongming Wei5,

+ Author Affiliations

 Corresponding author: Shibing Long, shibinglong@ustc.edu.cn; Genquan Han, gqhan@xidian.edu.cn; Yuhao Zhang, yhzhang@vt.edu; Yibo Wang, ybwang2022@sinano.ac.cn; Zhongming Wei, zmwei@semi.ac.cn

DOI: 10.1088/1674-4926/44/7/070101

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[1]
Labed M, Min J Y, Slim A B, et al. Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes. J Semicond, 2023, 44(7), 072801 doi: 10.1088/1674-4926/44/7/072801
[2]
Han T T, Wang Y G, Y Lv, et al. 2.83-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2. J Semicond, 2023, 44(7), 072802 doi: 10.1088/1674-4926/44/7/072802
[3]
Jiang Z L, Li X N, X Z Zhou, et al. Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress. J Semicond, 2023, 44(7), 072803 doi: 10.1088/1674-4926/44/7/072803
[4]
X Z Zhou, G W Xu, S B Long. A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect. J Semicond, 2023, 44(7), 072804 doi: 10.1088/1674-4926/44/7/072804
[5]
W Guo, Z Han, X L Zhao, et al. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters. J Semicond, 2023, 44(7), 072805 doi: 10.1088/1674-4926/44/7/072805
[6]
J J Tao, G Zeng, X X Li, et al. Surface plasmon assisted high-performance photodetectors based on hybrid TiO2@GaOxNy-Ag heterostructure. J Semicond, 2023, 44(7), 072806 doi: 10.1088/1674-4926/44/7/072806
[7]
C Wu, H L He, H Z Hu, et al. Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3. J Semicond, 2023, 44(7), 072807 doi: 10.1088/1674-4926/44/7/072807
[8]
R L Li, Y H Lin, Y Li, et al. Amorphous gallium oxide homojunction-based optoelectronic synapse for multi-functional signal processing. J Semicond, 2023, 44(7), 074101 doi: 10.1088/1674-4926/44/7/074101
[9]
Y H Zhang and F Xing. Anisotropic optical and electric properties of β-gallium oxide. J Semicond, 2023, 44(7), 071801 doi: 10.1088/1674-4926/44/7/071801
[10]
G W Xu, F H Wu, W B Hao, et al. Vertical β-Ga2O3 power electronics. J Semicond, 2023, 44(7), 070301 doi: 10.1088/1674-4926/44/7/070301
[1]
Labed M, Min J Y, Slim A B, et al. Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes. J Semicond, 2023, 44(7), 072801 doi: 10.1088/1674-4926/44/7/072801
[2]
Han T T, Wang Y G, Y Lv, et al. 2.83-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2. J Semicond, 2023, 44(7), 072802 doi: 10.1088/1674-4926/44/7/072802
[3]
Jiang Z L, Li X N, X Z Zhou, et al. Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress. J Semicond, 2023, 44(7), 072803 doi: 10.1088/1674-4926/44/7/072803
[4]
X Z Zhou, G W Xu, S B Long. A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect. J Semicond, 2023, 44(7), 072804 doi: 10.1088/1674-4926/44/7/072804
[5]
W Guo, Z Han, X L Zhao, et al. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters. J Semicond, 2023, 44(7), 072805 doi: 10.1088/1674-4926/44/7/072805
[6]
J J Tao, G Zeng, X X Li, et al. Surface plasmon assisted high-performance photodetectors based on hybrid TiO2@GaOxNy-Ag heterostructure. J Semicond, 2023, 44(7), 072806 doi: 10.1088/1674-4926/44/7/072806
[7]
C Wu, H L He, H Z Hu, et al. Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3. J Semicond, 2023, 44(7), 072807 doi: 10.1088/1674-4926/44/7/072807
[8]
R L Li, Y H Lin, Y Li, et al. Amorphous gallium oxide homojunction-based optoelectronic synapse for multi-functional signal processing. J Semicond, 2023, 44(7), 074101 doi: 10.1088/1674-4926/44/7/074101
[9]
Y H Zhang and F Xing. Anisotropic optical and electric properties of β-gallium oxide. J Semicond, 2023, 44(7), 071801 doi: 10.1088/1674-4926/44/7/071801
[10]
G W Xu, F H Wu, W B Hao, et al. Vertical β-Ga2O3 power electronics. J Semicond, 2023, 44(7), 070301 doi: 10.1088/1674-4926/44/7/070301
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    Received: 26 June 2023 Revised: Online: Accepted Manuscript: 29 June 2023Uncorrected proof: 29 June 2023Corrected proof: 05 July 2023Published: 10 July 2023

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      Shibing Long, Genquan Han, Yuhao Zhang, Yibo Wang, Zhongming Wei. Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)[J]. Journal of Semiconductors, 2023, 44(7): 070101. doi: 10.1088/1674-4926/44/7/070101 ****Shibing Long, Genquan Han, Yuhao Zhang, Yibo Wang, Zhongming Wei. 2023: Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ). Journal of Semiconductors, 44(7): 070101. doi: 10.1088/1674-4926/44/7/070101
      Citation:
      Shibing Long, Genquan Han, Yuhao Zhang, Yibo Wang, Zhongming Wei. Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)[J]. Journal of Semiconductors, 2023, 44(7): 070101. doi: 10.1088/1674-4926/44/7/070101 ****
      Shibing Long, Genquan Han, Yuhao Zhang, Yibo Wang, Zhongming Wei. 2023: Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ). Journal of Semiconductors, 44(7): 070101. doi: 10.1088/1674-4926/44/7/070101

      Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)

      DOI: 10.1088/1674-4926/44/7/070101
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      • Shibing Long:is a full professor at the Institute of Microelectronics, University of Science and Technology of China. He received his PhD from the Institute of Microelectronics of the Chinese Academy of Sciences in 2005. Then, he worked there from 2005 to 2018 and joined the University of Science and Technology of China in 2018. His research focuses on micro- and nanofabrication, RRAM, ultrawide bandgap semiconductor devices (power devices and detectors) and memory circuit design
      • Genquan Han:is a full professor at Xidian University and a recipient of the National Science Fund for Distinguished Young Scholars. He graduated from Tsinghua University with a bachelor's degree and received his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2008. After graduation, he joined the National University of Singapore to conduct research on advanced microelectronic devices and made original contributions in the field of advanced CMOS device research. Since returning to China in 2013, he has mainly focused on research in wide-bandgap gallium oxide (Ga2O3) heterojunction integrated materials and power devices, post-Moore new micro/nano devices and chips. He serves as an editor for IEEE Electron Device Letters
      • Yuhao Zhang:received the B.S. degree from Peking University, Beijing, China, in 2011, and the M.S. and Ph.D. degrees from Massachusetts Institute of Technology (MIT), Cambridge, MA, USA, in 2013 and 2017, respectively. From 2017 to 2018, he was a postdoctoral associate with MIT. Since 2018, he has been an Assistant Professor with the Center for Power Electronics Systems, the Bradley Department of Electrical and Computer Engineering, Virginia Tech. His research interests include power semiconductor devices, (ultra-)wide-bandgap semiconductor materials, power electronics applications, and machine learning assisted co-design
      • Yibo Wang:received his B.S. from Chongqing University (China) in 2014, and Ph.D. from Xidian University (China) in 2021. From 2022, he worked as an Assistant Research Fellow in Prof. Ke Xu’s Group at Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences. His research interests include Ga2O3 power devices and vertical GaN devices, and has done some works about the heterogeneous integration and superjunction Ga2O3 power transistors
      • Zhongming Wei:received his B.S. from Wuhan University (China) in 2005, and Ph.D. from Institute of Chemistry, Chinese Academy of Sciences in 2010 under the supervision of Prof. Daoben Zhu and Prof. Wei Xu. From August 2010 to January 2015, he worked as a postdoctoral fellow and then Assistant Professor in Prof. Thomas Bjørnholm's group at University of Copenhagen, Denmark. Currently, he is working as a Professor at Institute of Semiconductors, Chinese Academy of Sciences. His research interests include low-dimensional semiconductors and their optoelectronic devices
      • Corresponding author: shibinglong@ustc.edu.cngqhan@xidian.edu.cnyhzhang@vt.eduybwang2022@sinano.ac.cnzmwei@semi.ac.cn
      • Received Date: 2023-06-26
      • Accepted Date: 2023-06-26
      • Available Online: 2023-06-29

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