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Shibing Long, Genquan Han, Yuhao Zhang, Yibo Wang, Zhongming Wei. Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)[J]. Journal of Semiconductors, 2023, 44(7): 070101. doi: 10.1088/1674-4926/44/7/070101
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Shibing Long, Genquan Han, Yuhao Zhang, Yibo Wang, Zhongming Wei. 2023: Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ). Journal of Semiconductors, 44(7): 070101. doi: 10.1088/1674-4926/44/7/070101
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Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)
DOI: 10.1088/1674-4926/44/7/070101
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References
[1] Labed M, Min J Y, Slim A B, et al. Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes. J Semicond, 2023, 44(7), 072801 doi: 10.1088/1674-4926/44/7/072801[2] Han T T, Wang Y G, Y Lv, et al. 2.83-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2. J Semicond, 2023, 44(7), 072802 doi: 10.1088/1674-4926/44/7/072802[3] Jiang Z L, Li X N, X Z Zhou, et al. Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress. J Semicond, 2023, 44(7), 072803 doi: 10.1088/1674-4926/44/7/072803[4] X Z Zhou, G W Xu, S B Long. A large-area multi-finger β-Ga2O3 MOSFET and its self-heating effect. J Semicond, 2023, 44(7), 072804 doi: 10.1088/1674-4926/44/7/072804[5] W Guo, Z Han, X L Zhao, et al. Large-area β-Ga2O3 Schottky barrier diode and its application in DC–DC converters. J Semicond, 2023, 44(7), 072805 doi: 10.1088/1674-4926/44/7/072805[6] J J Tao, G Zeng, X X Li, et al. Surface plasmon assisted high-performance photodetectors based on hybrid TiO2@GaOxNy-Ag heterostructure. J Semicond, 2023, 44(7), 072806 doi: 10.1088/1674-4926/44/7/072806[7] C Wu, H L He, H Z Hu, et al. Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3. J Semicond, 2023, 44(7), 072807 doi: 10.1088/1674-4926/44/7/072807[8] R L Li, Y H Lin, Y Li, et al. Amorphous gallium oxide homojunction-based optoelectronic synapse for multi-functional signal processing. J Semicond, 2023, 44(7), 074101 doi: 10.1088/1674-4926/44/7/074101[9] Y H Zhang and F Xing. Anisotropic optical and electric properties of β-gallium oxide. J Semicond, 2023, 44(7), 071801 doi: 10.1088/1674-4926/44/7/071801[10] G W Xu, F H Wu, W B Hao, et al. Vertical β-Ga2O3 power electronics. J Semicond, 2023, 44(7), 070301 doi: 10.1088/1674-4926/44/7/070301 -
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