Fig. 1.
(Color online) The schematic diagram of the roadmap and structures for SBDs. Surface engineering technique (a), and edge termination techniques (b-e) have emerged in recent years.
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Guangwei Xu, Feihong Wu, Qi Liu, Zhao Han, Weibing Hao, Jinbo Zhou, Xuanze Zhou, Shu Yang, Shibing Long. Vertical β-Ga2O3 power electronics[J]. Journal of Semiconductors, 2023, 44(7): 070301. doi: 10.1088/1674-4926/44/7/070301
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Guangwei Xu, Feihong Wu, Qi Liu, Zhao Han, Weibing Hao, Jinbo Zhou, Xuanze Zhou, Shu Yang, Shibing Long. 2023: Vertical β-Ga2O3 power electronics. Journal of Semiconductors, 44(7): 070301. doi: 10.1088/1674-4926/44/7/070301
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Vertical β-Ga2O3 power electronics
DOI: 10.1088/1674-4926/44/7/070301
More Information
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Guangwei Xu：received his PhD from the Institute of Microelectronics of the Chinese Academy of Sciences in 2017. Then, he joined the University of California, Los Angeles as a postdoc. He joined the University of Science and Technology of China as an associate research fellow in the Shibing Long Group from 2019. His research focuses on Beta-Gallium Oxide power device fabrication, device defect state measurement and device modeling -
Shu Yang：is a professor at the School of Microelectronics, University of Science and Technology of China. She received her B.S. degree from Fudan University and Ph.D. degree from Hong Kong University of Science and Technology (HKUST). She was a visiting assistant professor at HKUST, postdoctoral research associate at the University of Cambridge, and professor at Zhejiang University. Her research focuses on fabrication, characterization and application of wide-bandgap semiconductor power devices -
Shibing Long：is a full professor at the School of Microelectronics, University of Science and Technology of China. He received his PhD from the Institute of Microelectronics of the Chinese Academy of Sciences in 2005. Then, he worked there from 2005 to 2018 and joined the University of Science and Technology of China in 2018. His research focuses on micro- and nanofabrication, RRAM, ultrawide bandgap semiconductor devices (power devices and detectors) and memory circuit design - Corresponding author: xugw@ustc.edu.cn; shibinglong@ustc.edu.cn
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References
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