Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector

Peipei Ma; Jun Zheng; Xiangquan Liu; Zhi Liu; Yuhua Zuo; Buwen Cheng

doi:10.1088/1674-4926/45/2/022502

J. Semicond. > 2024, Volume 45 > Issue 2 > 022502

ARTICLES

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Peipei Ma^{1, 2}, Jun Zheng^{1, 2,}, Xiangquan Liu^{1, 2}, Zhi Liu^{1, 2}, Yuhua Zuo^{1, 2} and Buwen Cheng^{1, 2}

+ Author Affiliations

Corresponding author: Jun Zheng, zhengjun@semi.ac.cn

DOI: 10.1088/1674-4926/45/2/022502

Abstract: In this work, a two-step metal organic chemical vapor deposition (MOCVD) method was applied for growing β-Ga₂O₃ film on c-plane sapphire. Optimized buffer layer growth temperature (T_B) was found at 700 °C and the β-Ga₂O₃ film with full width at half maximum (FWHM) of 0.66° was achieved. A metal−semiconductor−metal (MSM) solar-blind photodetector (PD) was fabricated based on the β-Ga₂O₃ film. Ultrahigh responsivity of 1422 A/W @ 254 nm and photo-to-dark current ratio (PDCR) of 10⁶ at 10 V bias were obtained. The detectivity of 2.5 × 10¹⁵ Jones proved that the photodetector has outstanding performance in detecting weak signals. Moreover, the photodetector exhibited superior wavelength selectivity with rejection ratio (R_{250 nm}/R_{400 nm}) of 10⁵. These results indicate that the two-step method is a promising approach for preparation of high-quality β-Ga₂O₃ films for high-performance solar-blind photodetectors.

Key words: MOCVD, two-step growth, β-Ga₂O₃, solar-blind photodetector, responsivity

References

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Fig. 1. (Color online) (a) XRD ω−2θ scan and (b) FWHM of rocking curve for β-Ga₂O₃ films grown at different T_B. Inset shows the XRD ω scan for films.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) AFM images and (b) RMS roughness of β-Ga₂O₃ films, (c) film thicknesses obtained from the cross-sectional SEM. Inset shows the cross-sectional image of film grown at T_B = 700 °C.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) The optical microscope diagram and (b) structural diagram of MSM photodetector. (c) The I−V characteristics of the MSM photodetector in the dark and illuminated by 254 and 365 nm. (d) The energy band diagram and photogenerated carriers of MSM β-Ga₂O₃ detector with external bias under 254 nm illumination.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) The time-dependent photoresponse of the Ga₂O₃ photodetector with external bias to 254 nm illumination, (b) the experimental data and the fitting curve of rise and decay process.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) The photocurrent spectrum of β-Ga₂O₃ MSM detector at −1 V bias in semilog scale, (b) the responsivity vs detectivity of different solar-blind photodetectors^[32−41].

DownLoad: Full-Size Img PowerPoint

[1]	Fu B, Jian G Z, Mu W X, et al. Crystal growth and design of Sn-doped β-Ga₂O₃: Morphology, defect and property studies of cylindrical crystal by EFG. J Alloys Compd, 2022, 896, 162830 doi: 10.1016/j.jallcom.2021.162830
[2]	Sun H D, Li K H, Torres Castanedo C G, et al. HCl flow-induced phase change of α-, β-, and ε-Ga₂O₃ films grown by MOCVD. Cryst Growth Des, 2018, 18, 2370 doi: 10.1021/acs.cgd.7b01791
[3]	Zhang J C, Dong P F, Dang K, et al. Ultra-wide bandgap semiconductor Ga₂O₃ power diodes. Nat Commun, 2022, 13, 3900 doi: 10.1038/s41467-022-31664-y
[4]	Sheoran H, Fang S, Liang F Z, et al. High performance of zero-power-consumption MOCVD-grown β-Ga₂O₃-based solar-blind photodetectors with ultralow dark current and high-temperature functionalities. ACS Appl Mater Interfaces, 2022, 14, 52096 doi: 10.1021/acsami.2c08511
[5]	Hou X H, Zhao X L, Zhang Y, et al. High-performance harsh-environment-resistant GaO_X solar-blind photodetectors via defect and doping engineering. Adv Mater, 2022, 34, 2106923 doi: 10.1002/adma.202106923
[6]	Ngo T S, Le D D, Vuong N Q, et al. Systematic investigation of growth and properties of Ga₂O₃ films on c-plane sapphire substrates prepared by plasma-assisted molecular beam epitaxy. ECS J Solid State Sci Technol, 2022, 11, 035008 doi: 10.1149/2162-8777/ac5d65
[7]	Murakami H, Nomura K, Goto K, et al. Homoepitaxial growth of β-Ga₂O₃ layers by halide vapor phase epitaxy. Appl Phys Express, 2015, 8, 015503 doi: 10.7567/APEX.8.015503
[8]	Saha S, Meng L Y, Feng Z X, et al. Schottky diode characteristics on high-growth rate LPCVD β -Ga₂O₃ films on (010) and (001) Ga₂O₃ substrates. Appl Phys Lett, 2022, 120, 122106 doi: 10.1063/5.0083659
[9]	Rafique S, Han L, Neal A T, et al. Heteroepitaxy of N-type β-Ga₂O₃ thin films on sapphire substrate by low pressure chemical vapor deposition. Appl Phys Lett, 2016, 109, 132103. doi: 10.1063/1.4963820
[10]	Xu Y, An Z Y, Zhang L X, et al. Solar blind deep ultraviolet β-Ga₂O₃ photodetectors grown on sapphire by the Mist-CVD method. Opt Mater Express, 2018, 8, 2941 doi: 10.1364/OME.8.002941
[11]	Hu D Q, Zhuang S W, Ma Z Z, et al. Study on the optical properties of β-Ga₂O₃ films grown by MOCVD. J Mater Sci: Mater Electron, 2017, 28, 10997 doi: 10.1007/s10854-017-6882-x
[12]	Anamika S P, Sriram K, Swanand V S, et al. High responsivity in molecular beam epitaxy grown β-Ga₂O₃ metal semiconductor metal solar blind deep-UV photodetector. Appl Phys Lett, 2017, 110, 221107 doi: 10.1063/1.4984904
[13]	Qian L X, Wu Z H, Zhang Y Y, et al. Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide. ACS Photonics, 2017, 4, 2203 doi: 10.1021/acsphotonics.7b00359
[14]	Arora K, Goel N, Kumar M, et al. Ultrahigh performance of self-powered β-Ga₂O₃ thin film solar-blind photodetector grown on cost-effective Si substrate using high-temperature seed layer. ACS Photonics, 2018, 5, 2391 doi: 10.1021/acsphotonics.8b00174
[15]	Cheng Y L, Zhang C F, Xu Y, et al. Heteroepitaxial growth of β-Ga₂O₃ thin films on c-plane sapphire substrates with β-(Al_xGa_{1- x})₂O₃ intermediate buffer layer by mist-CVD method. Mater Today Commun, 2021, 29, 102766 doi: 10.1016/j.mtcomm.2021.102766
[16]	Zhang Y B, Zheng J, Ma P P, et al. Growth and characterization of β-Ga₂O₃ thin films grown on off-angled Al₂O₃ substrates by metal-organic chemical vapor deposition. J Semicond, 2022, 43, 092801 doi: 10.1088/1674-4926/43/9/092801
[17]	Ma P P, Zheng J, Zhang Y B, et al. Investigation on n-type (−201) β-Ga₂O₃ ohmic contact via Si ion implantation. Tsinghua Sci Technol, 2022, 28, 150 doi: 10.26599/TST.2021.9010039
[18]	Ma P P, Zheng J, Zhang Y B, et al. Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics. Chin Phys B, 2022, 31, 047302 doi: 10.1088/1674-1056/ac2729
[19]	Joshi G, Chauhan Y S, Verma A. Temperature dependence of β-Ga₂O₃ heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition. J Alloys Compd, 2021, 883, 160799 doi: 10.1016/j.jallcom.2021.160799
[20]	Li H R, Wang Y H, Cao J, et al. Enhanced solar-blind photoresponse characteristics in β-Ga₂O₃ epitaxial films on large miscut sapphire substrates. J Alloys Compd, 2021, 877, 160143 doi: 10.1016/j.jallcom.2021.160143
[21]	Jiao Y J, Jiang Q, Meng J H, et al. Growth and characteristics of β-Ga₂O₃ thin films on sapphire (0001) by low pressure chemical vapour deposition. Vacuum, 2021, 189, 110253 doi: 10.1016/j.vacuum.2021.110253
[22]	Xu W L, Shi J C, Li Y W, et al. Study of β-Ga₂O₃ films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy. Mater Lett, 2021, 289, 129411 doi: 10.1016/j.matlet.2021.129411
[23]	Ma Y J, Tang W B, Chen T W, et al. Effect of off-axis substrate angles on β-Ga₂O₃ thin films and solar-blind ultraviolet photodetectors grown on sapphire by MOCVD. Mater Sci Semicond Process, 2021, 131, 105856 doi: 10.1016/j.mssp.2021.105856
[24]	Qin Y A, Li L H, Zhao X L, et al. Metal–semiconductor–metal ε-Ga₂O₃ solar-blind photodetectors with a record-high responsivity rejection ratio and their gain mechanism. ACS Photonics, 2020, 7, 812 doi: 10.1021/acsphotonics.9b01727
[25]	Kim S, Kim J. Highly selective ozone-treated β-Ga₂O₃ solar-blind deep-UV photodetectors. Appl Phys Lett, 2020, 117, 261101 doi: 10.1063/5.0030400
[26]	Li Y Q, Zhang D, Lin R C, et al. Graphene interdigital electrodes for improving sensitivity in a Ga₂O₃: Zn deep-ultraviolet photoconductive detector. ACS Appl Mater Interfaces, 2019, 11, 1013 doi: 10.1021/acsami.8b14380
[27]	Zhang D, Zheng W, Lin R C, et al. High quality β-Ga₂O₃ film grown with N₂O for high sensitivity solar-blind-ultraviolet photodetector with fast response speed. J Alloys Compd, 2018, 735, 150 doi: 10.1016/j.jallcom.2017.11.037
[28]	Kong W Y, Wu G A, Wang K Y, et al. Graphene-β-Ga₂O₃ heterojunction for highly sensitive deep UV photodetector application. Adv Mater, 2016, 28, 10725 doi: 10.1002/adma.201604049
[29]	Qian L X, Liu H Y, Zhang H F, et al. Simultaneously improved sensitivity and response speed of β-Ga₂O₃ solar-blind photodetector via localized tuning of oxygen deficiency. Appl Phys Lett, 2019, 114, 113506 doi: 10.1063/1.5088665
[30]	Wang Y H, Cui W J, Yu J E, et al. One-step growth of amorphous/crystalline Ga₂O₃ phase junctions for high-performance solar-blind photodetection. ACS Appl Mater Interfaces, 2019, 11, 45922 doi: 10.1021/acsami.9b17409
[31]	Zhou H T, Cong L J, Ma J G, et al. High-performance high-temperature solar-blind photodetector based on polycrystalline Ga₂O₃ film. J Alloys Compd, 2020, 847, 156536 doi: 10.1016/j.jallcom.2020.156536
[32]	Oh S, Kim C K, Kim J. High responsivity β-Ga₂O₃ metal–semiconductor–metal solar-blind photodetectors with ultraviolet transparent graphene electrodes. ACS Photonics, 2018, 5, 1123 doi: 10.1021/acsphotonics.7b01486
[33]	Chen Y C, Lu Y J, Liu Q, et al. Ga₂O₃ photodetector arrays for solar-blind imaging. J Mater Chem C, 2019, 7, 2557 doi: 10.1039/C8TC05251D
[34]	Li M Q, Yang N, Wang G G, et al. Highly preferred orientation of Ga₂O₃ films sputtered on SiC substrates for deep UV photodetector application. Appl Surf Sci, 2019, 471, 694 doi: 10.1016/j.apsusc.2018.12.045
[35]	Li Y N, Li Y Q, Ji Y, et al. Sol-gel preparation of Sn doped gallium oxide films for application in solar-blind ultraviolet photodetectors. J Mater Sci, 2022, 57, 1186 doi: 10.1007/s10853-021-06680-w
[36]	Hu G C, Shan C X, Zhang N, et al. High gain Ga₂O₃ solar-blind photodetectors realized via a carrier multiplication process. Opt Express, 2015, 23, 13554 doi: 10.1364/OE.23.013554
[37]	Qian L X, Zhang H F, Lai P T, et al. High-sensitivity β-Ga₂O₃ solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate. Opt Mater Express, 2017, 7, 3643 doi: 10.1364/OME.7.003643
[38]	Hou X H, Sun H D, Long S B, et al. Ultrahigh-performance solar-blind photodetector based on α-phase- dominated Ga₂O₃ film with record low dark current of 81 fA. IEEE Electron Device Lett, 2019, 40, 1483 doi: 10.1109/LED.2019.2932140
[39]	Pintor-Monroy M I, Murillo-Borjas B L, Quevedo-Lopez M A. Nanocrystalline and polycrystalline β-Ga₂O₃ thin films for deep ultraviolet detectors. ACS Appl Electron Mater, 2020, 2, 3358 doi: 10.1021/acsaelm.0c00643
[40]	Lin R C, Zheng W, Zhang D, et al. High-performance graphene/β-Ga₂O₃ heterojunction deep-ultraviolet photodetector with hot-electron excited carrier multiplication. ACS Appl Mater Interfaces, 2018, 10, 22419 doi: 10.1021/acsami.8b05336
[41]	Liu Z, Wang X A, Liu Y Y, et al. A high-performance ultraviolet solar-blind photodetector based on a β-Ga₂O₃ Schottky photodiode. J Mater Chem C, 2019, 7, 13920 doi: 10.1039/C9TC04912F

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Received: 12 September 2023 Revised: 31 October 2023 Online: Accepted Manuscript: 29 November 2023Uncorrected proof: 08 December 2023Published: 10 February 2024

Article Navigation > Journal of Semiconductors > 2024 > 45(2): 022502

Peipei Ma, Jun Zheng, Xiangquan Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng. Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector[J]. Journal of Semiconductors, 2024, 45(2): 022502. doi: 10.1088/1674-4926/45/2/022502 ****P P Ma, J Zheng, X Q Liu, Z Liu, Y H Zuo, B W Cheng. Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector[J]. J. Semicond, 2024, 45(2): 022502. doi: 10.1088/1674-4926/45/2/022502

Citation:

Peipei Ma, Jun Zheng, Xiangquan Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng. Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector[J]. Journal of Semiconductors, 2024, 45(2): 022502. doi: 10.1088/1674-4926/45/2/022502 ****

P P Ma, J Zheng, X Q Liu, Z Liu, Y H Zuo, B W Cheng. Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector[J]. J. Semicond, 2024, 45(2): 022502. doi: 10.1088/1674-4926/45/2/022502

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Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

DOI: 10.1088/1674-4926/45/2/022502

Peipei Ma^{1, 2},
Jun Zheng^{1, 2,},
Xiangquan Liu^{1, 2},
Zhi Liu^{1, 2},
Yuhua Zuo^{1, 2},
Buwen Cheng^{1, 2}

1.
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Peipei Ma received the BS degree from the Hebei University of Technology, China in 2013, and the PhD degree in microelectronics and optoelectronics from the Institute of Semiconductors, Chinese Academy of Sciences, China in 2022. Her research interests include epitaxial growth and device fabrication of gallium oxide
Jun Zheng received the BSci degree from Beijing Institue of Technology, China in 2006 and PhD degree in physical electronics from Graduated University of Chinese Academy of Sciences, China in 2011. He is now an associate researcher in Institute of Semiconductors, Chinese Academy of Sciences, China. His research interest is silicon photonics and gallium oxide devices
Corresponding author: zhengjun@semi.ac.cn
Received Date: 2023-09-12
Revised Date: 2023-10-31

Available Online: 2023-11-29

Abstract

Abstract

In this work, a two-step metal organic chemical vapor deposition (MOCVD) method was applied for growing β-Ga₂O₃ film on c-plane sapphire. Optimized buffer layer growth temperature (T_B) was found at 700 °C and the β-Ga₂O₃ film with full width at half maximum (FWHM) of 0.66° was achieved. A metal−semiconductor−metal (MSM) solar-blind photodetector (PD) was fabricated based on the β-Ga₂O₃ film. Ultrahigh responsivity of 1422 A/W @ 254 nm and photo-to-dark current ratio (PDCR) of 10⁶ at 10 V bias were obtained. The detectivity of 2.5 × 10¹⁵ Jones proved that the photodetector has outstanding performance in detecting weak signals. Moreover, the photodetector exhibited superior wavelength selectivity with rejection ratio (R_{250 nm}/R_{400 nm}) of 10⁵. These results indicate that the two-step method is a promising approach for preparation of high-quality β-Ga₂O₃ films for high-performance solar-blind photodetectors.
- MOCVD,
- two-step growth,
- β-Ga₂O₃,
- solar-blind photodetector,
- responsivity

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References(41)

References

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Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

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Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

DOI: 10.1088/1674-4926/45/2/022502

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Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector