Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

Shuyu Wu; Rongrong Cao; Hao Jiang; Yu Li; Xumeng Zhang; Yang Yang; Yan Wang; Yingfen Wei; Qi Liu

doi:10.1088/1674-4926/45/3/032301

J. Semicond. > 2024, Volume 45 > Issue 3 > 032301

ARTICLES

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Shuyu Wu^{1, 4}, Rongrong Cao³, Hao Jiang^2,, Yu Li², Xumeng Zhang², Yang Yang¹, Yan Wang¹, Yingfen Wei^2, and Qi Liu²

+ Author Affiliations

1. State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2. Frontier institute of Chip and System, Fudan University, Shanghai 200433, China
3. College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China
4. University of Chinese Academy of Sciences, Beijing 100049, China

Author Bio:

Shuyu Wu received her Bachelor’s degree in 2017 from Xidian University. She is now a doctoral candidate at the Institute of Microelectronics, Chinese Academy of Sciences and University of Chinese Academy of Sciences. Her research focuses on HfO₂ based ferroelectric thin films and non-volatile memory.

Hao Jiang received his Ph.D. in 2018 from University of Massachusetts, Amherst. In 2022, he joined in the Frontier Institute of Chip and System, Fudan University. He has been engaged in the research of new storage technology for a long time, and he is committed to promoting the applications and technology transformation of memristor and ferroelectric devices in the fields of storage, memory/brain computing and hardware security.

Yingfen Wei received her Ph.D. degree from University of Groningen, Netherlands, in 2020. She then worked at the University of Groningen and École Polytechnique Fédérale de Lausanne as a post-doctoral researcher. In 2022, she joined the Frontier Institute of Chip and System, Fudan University. She has been engaged in the study of novel ferroelectric materials and their applications in non-volatile memories.

Corresponding author: Hao Jiang, haoj@fudan.edu.cn; Yingfen Wei, yingfen_wei@fudan.edu.cn

DOI: 10.1088/1674-4926/45/3/032301

Abstract: The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics. In this work, TiN/Hf_0.5Zr_0.5O₂/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature (300 K) to cryogenic temperature (30 K). We observe a consistent decrease in permittivity (ε_r) and a progressive increase in coercive electric field (E_c) as temperatures decrease. Our investigation reveals exceptional stability in the double remnant polarization (2P_r) of our ferroelectric thin films across a wide temperature range. Specifically, at 30 K, a 2P_r of 36 µC/cm² under an applied electric field of 3.0 MV/cm is achieved. Moreover, we observed a reduced fatigue effect at 30 K in comparison to 300 K. The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO₂ based ferroelectric thin films for cryo-electronics applications.

Key words: hafnia-zirconia solid solution, ferroelectricity, cryogenic temperature, wake-up effect

References

[1]	Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99, 102903 doi: 10.1063/1.3634052
[2]	Cheema S S, Kwon D, Shanker N, et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature, 2020, 580, 478 doi: 10.1038/s41586-020-2208-x
[3]	Banerjee W, Kashir A, Kamba S. Hafnium oxide (HfO₂)–A multifunctional oxide: A review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories. Small, 2022, 18, 2107575 doi: 10.1002/smll.202107575
[4]	Khan A I, Keshavarzi A, Datta S. The future of ferroelectric field-effect transistor technology. Nat Electron, 2020, 3, 588 doi: 10.1038/s41928-020-00492-7
[5]	Cao R R, Zhang X M, Liu S, et al. Compact artificial neuron based on anti-ferroelectric transistor. Nat Commun, 2022, 13, 7018 doi: 10.1038/s41467-022-34774-9
[6]	https://trc.nist.gov/cryogenics
[7]	Müller J, Böscke T S, Schröder U, et al. Ferroelectricity in simple binary ZrO₂ and HfO₂. Nano Lett, 2012, 12, 4318 doi: 10.1021/nl302049k
[8]	Henry M D, Smith S W, Lewis R M, et al. Stabilization of ferroelectric phase of Hf_0.58Zr_0.42O₂ on NbN at 4 K. Appl Phys Lett, 2019, 114, 092903 doi: 10.1063/1.5052435
[9]	Hur J, Luo Y C, Wang Z, et al. Characterizing ferroelectric properties of Hf_0.5Zr_0.5O₂ from deep-cryogenic temperature (4 K) to 400 K. IEEE J Explor Solid State Comput Devices Circuits, 2021, 7, 168 doi: 10.1109/JXCDC.2021.3130783
[10]	Park M H, Chung C C, Schenk T, et al. Origin of temperature-dependent ferroelectricity in Si-doped HfO₂. Adv Elect Materials, 2018, 4, 1700489 doi: 10.1002/aelm.201700489
[11]	Zhou D Y, Guan Y, Vopson M M, et al. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films. Acta Mater, 2015, 99, 240 doi: 10.1016/j.actamat.2015.07.035
[12]	Wang D, Wang J L, Li Q A, et al. Stable ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films within a broad working temperature range. Jpn J Appl Phys, 2019, 58, 090910 doi: 10.7567/1347-4065/ab3844
[13]	Pešić M, Fengler F P G, Larcher L, et al. Physical mechanisms behind the field-cycling behavior of HfO₂-based ferroelectric capacitors. Adv Funct Materials, 2016, 26, 4601 doi: 10.1002/adfm.201600590
[14]	Adkins J W, Fina I, Sánchez F, et al. Thermal evolution of ferroelectric behavior in epitaxial Hf_0.5Zr_0.5O₂. Appl Phys Lett, 2020, 117, 142902 doi: 10.1063/5.0015547
[15]	Liu H, Yang Q Y, Jin C J, et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci China Inf Sci, 2023, 67, 119401 doi: 10.1007/s11432-022-3721-0
[16]	Jiang P F, Luo Q, Xu X X, et al. Wake-up effect in HfO₂-based ferroelectric films. Adv Elect Materials, 2021, 7, 2000728 doi: 10.1002/aelm.202000728
[17]	Silva J P B, Sekhar K C, Negrea R F, et al. Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films. Appl Mater Today, 2022, 26, 101394 doi: 10.1016/j.apmt.2022.101394
[18]	Park M H, Kim H J, Kim Y J, et al. Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films. J Mater Chem C, 2015, 3, 6291 doi: 10.1039/C5TC01074H
[19]	Jiang H, Bhuiyan M A, Liu Z, et al. A study of BEOL processed Hf_0.5Zr_0.5O₂^- based ferroelectric capacitors and their potential for automotive applications. 2020 IEEE International Memory Workshop (IMW), 2020 doi: 10.1109/IMW48823.2020.9108113
[20]	Park M H, Kim H J, Kim Y J, et al. Giant negative electrocaloric effects of Hf_0.5Zr_0.5O₂ thin films. Adv Mater, 2016, 28, 7956 doi: 10.1002/adma.201602787
[21]	Hsiang K Y, Lee J Y, Lou Z F, et al. Cryogenic endurance of anti-ferroelectric and ferroelectric Hf_1-xZr_xO₂ for quantum computing applications. 2023 IEEE International Reliability Physics Symposium (IRPS), 2023 doi: 10.1109/IRPS48203.2023.10118311
[22]	Chen J, Jin C, Yu X, et al. Impact of oxygen vacancy on ferroelectric characteristics and its implication for wake-up and fatigue of HfO₂-based thin films. IEEE Trans Electron Devices, 2022, 69(9), 5297 doi: 10.1109/TED.2022.3190256

Fig. 1. (Color online) (a) The P−E hysteresis curves of HZO capacitor at its pristine state and after 10³ cycles. The inside illustration is a schematic diagram of HZO capacitor devices during electrical measurements. (b) The GI-XRD diffractogram of HZO thin film at an incident angle of 0.5°. (c) A cross-sectional TEM image of the HZO capacitor. (d) The fast Fourier transform pattern from the HR-TEM image in the yellow box in (c).

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) The J−E curves of TiN/HZO/TiN capacitor ranging from 300 to 30 K. (b) The fitting results of the leakage current at temperatures from 300 to 130 K by the P−F emission at 300, 200, and 130 K. (c) The fitting plot of the leakage current at 30 K by the F−N tunneling. (d) The typical P−E curves of HZO capacitors at temperatures from 300 to 30 K under 3.0 MV/cm. (e) The statistical results of ±P_r values at temperatures from 300 to 30 K. The inset shows the typical PUND curves at various temperatures under 3.0 MV/cm. (f) ε_r−E curves of HZO capacitors in the temperature ranging from 300 to 30 K.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) The PUND curves of HZO capacitors at different temperatures under (a) 2.5 MV/cm, (b) 2.0 MV/cm, and (c) 1.5 MV/cm. (d) The averaged E_c values at different temperatures. (e) The 2P_r values at different temperatures. (f) The relationship between 2P_r values with temperature in previous reports and this work. The 2P_r values in this work are from PUND data under 3.0 and 2.5 MV/cm. The letter W and P stand for woken-up state and pristine state, respectively. The applied electric fields are indicated on the right.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Endurance characteristics of HZO capacitors under 2.5 MV/cm at 300 and 30 K.

DownLoad: Full-Size Img PowerPoint

[1]	Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99, 102903 doi: 10.1063/1.3634052
[2]	Cheema S S, Kwon D, Shanker N, et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature, 2020, 580, 478 doi: 10.1038/s41586-020-2208-x
[3]	Banerjee W, Kashir A, Kamba S. Hafnium oxide (HfO₂)–A multifunctional oxide: A review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories. Small, 2022, 18, 2107575 doi: 10.1002/smll.202107575
[4]	Khan A I, Keshavarzi A, Datta S. The future of ferroelectric field-effect transistor technology. Nat Electron, 2020, 3, 588 doi: 10.1038/s41928-020-00492-7
[5]	Cao R R, Zhang X M, Liu S, et al. Compact artificial neuron based on anti-ferroelectric transistor. Nat Commun, 2022, 13, 7018 doi: 10.1038/s41467-022-34774-9
[6]	https://trc.nist.gov/cryogenics
[7]	Müller J, Böscke T S, Schröder U, et al. Ferroelectricity in simple binary ZrO₂ and HfO₂. Nano Lett, 2012, 12, 4318 doi: 10.1021/nl302049k
[8]	Henry M D, Smith S W, Lewis R M, et al. Stabilization of ferroelectric phase of Hf_0.58Zr_0.42O₂ on NbN at 4 K. Appl Phys Lett, 2019, 114, 092903 doi: 10.1063/1.5052435
[9]	Hur J, Luo Y C, Wang Z, et al. Characterizing ferroelectric properties of Hf_0.5Zr_0.5O₂ from deep-cryogenic temperature (4 K) to 400 K. IEEE J Explor Solid State Comput Devices Circuits, 2021, 7, 168 doi: 10.1109/JXCDC.2021.3130783
[10]	Park M H, Chung C C, Schenk T, et al. Origin of temperature-dependent ferroelectricity in Si-doped HfO₂. Adv Elect Materials, 2018, 4, 1700489 doi: 10.1002/aelm.201700489
[11]	Zhou D Y, Guan Y, Vopson M M, et al. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films. Acta Mater, 2015, 99, 240 doi: 10.1016/j.actamat.2015.07.035
[12]	Wang D, Wang J L, Li Q A, et al. Stable ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films within a broad working temperature range. Jpn J Appl Phys, 2019, 58, 090910 doi: 10.7567/1347-4065/ab3844
[13]	Pešić M, Fengler F P G, Larcher L, et al. Physical mechanisms behind the field-cycling behavior of HfO₂-based ferroelectric capacitors. Adv Funct Materials, 2016, 26, 4601 doi: 10.1002/adfm.201600590
[14]	Adkins J W, Fina I, Sánchez F, et al. Thermal evolution of ferroelectric behavior in epitaxial Hf_0.5Zr_0.5O₂. Appl Phys Lett, 2020, 117, 142902 doi: 10.1063/5.0015547
[15]	Liu H, Yang Q Y, Jin C J, et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci China Inf Sci, 2023, 67, 119401 doi: 10.1007/s11432-022-3721-0
[16]	Jiang P F, Luo Q, Xu X X, et al. Wake-up effect in HfO₂-based ferroelectric films. Adv Elect Materials, 2021, 7, 2000728 doi: 10.1002/aelm.202000728
[17]	Silva J P B, Sekhar K C, Negrea R F, et al. Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films. Appl Mater Today, 2022, 26, 101394 doi: 10.1016/j.apmt.2022.101394
[18]	Park M H, Kim H J, Kim Y J, et al. Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films. J Mater Chem C, 2015, 3, 6291 doi: 10.1039/C5TC01074H
[19]	Jiang H, Bhuiyan M A, Liu Z, et al. A study of BEOL processed Hf_0.5Zr_0.5O₂^- based ferroelectric capacitors and their potential for automotive applications. 2020 IEEE International Memory Workshop (IMW), 2020 doi: 10.1109/IMW48823.2020.9108113
[20]	Park M H, Kim H J, Kim Y J, et al. Giant negative electrocaloric effects of Hf_0.5Zr_0.5O₂ thin films. Adv Mater, 2016, 28, 7956 doi: 10.1002/adma.201602787
[21]	Hsiang K Y, Lee J Y, Lou Z F, et al. Cryogenic endurance of anti-ferroelectric and ferroelectric Hf_1-xZr_xO₂ for quantum computing applications. 2023 IEEE International Reliability Physics Symposium (IRPS), 2023 doi: 10.1109/IRPS48203.2023.10118311
[22]	Chen J, Jin C, Yu X, et al. Impact of oxygen vacancy on ferroelectric characteristics and its implication for wake-up and fatigue of HfO₂-based thin films. IEEE Trans Electron Devices, 2022, 69(9), 5297 doi: 10.1109/TED.2022.3190256

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 978 Times PDF downloads: 177 Times Cited by: 0 Times

History

Received: 30 August 2023 Revised: 08 November 2023 Online: Uncorrected proof: 08 December 2023Accepted Manuscript: 08 December 2023Published: 15 March 2024

Article Navigation > Journal of Semiconductors > 2024 > 45(3): 032301

Shuyu Wu, Rongrong Cao, Hao Jiang, Yu Li, Xumeng Zhang, Yang Yang, Yan Wang, Yingfen Wei, Qi Liu. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition[J]. Journal of Semiconductors, 2024, 45(3): 032301. doi: 10.1088/1674-4926/45/3/032301 ****S Y Wu, R R Cao, H Jiang, Y Li, X M Zhang, Y Yang, Y Wang, Y F Wei, Q Liu. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition[J]. J. Semicond, 2024, 45(3): 032301. doi: 10.1088/1674-4926/45/3/032301

Citation:

Shuyu Wu, Rongrong Cao, Hao Jiang, Yu Li, Xumeng Zhang, Yang Yang, Yan Wang, Yingfen Wei, Qi Liu. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition[J]. Journal of Semiconductors, 2024, 45(3): 032301. doi: 10.1088/1674-4926/45/3/032301 ****

S Y Wu, R R Cao, H Jiang, Y Li, X M Zhang, Y Yang, Y Wang, Y F Wei, Q Liu. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition[J]. J. Semicond, 2024, 45(3): 032301. doi: 10.1088/1674-4926/45/3/032301

Citation:

PDF( 5795 KB)

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

DOI: 10.1088/1674-4926/45/3/032301

1.
State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2.
Frontier institute of Chip and System, Fudan University, Shanghai 200433, China
3.
College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China
4.
University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Shuyu Wu received her Bachelor’s degree in 2017 from Xidian University. She is now a doctoral candidate at the Institute of Microelectronics, Chinese Academy of Sciences and University of Chinese Academy of Sciences. Her research focuses on HfO₂ based ferroelectric thin films and non-volatile memory
Hao Jiang received his Ph.D. in 2018 from University of Massachusetts, Amherst. In 2022, he joined in the Frontier Institute of Chip and System, Fudan University. He has been engaged in the research of new storage technology for a long time, and he is committed to promoting the applications and technology transformation of memristor and ferroelectric devices in the fields of storage, memory/brain computing and hardware security
Yingfen Wei received her Ph.D. degree from University of Groningen, Netherlands, in 2020. She then worked at the University of Groningen and École Polytechnique Fédérale de Lausanne as a post-doctoral researcher. In 2022, she joined the Frontier Institute of Chip and System, Fudan University. She has been engaged in the study of novel ferroelectric materials and their applications in non-volatile memories
Corresponding author: haoj@fudan.edu.cn; yingfen_wei@fudan.edu.cn
Received Date: 2023-08-30
Revised Date: 2023-11-08

Available Online: 2023-12-08

Abstract

Abstract

The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics. In this work, TiN/Hf_0.5Zr_0.5O₂/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature (300 K) to cryogenic temperature (30 K). We observe a consistent decrease in permittivity (ε_r) and a progressive increase in coercive electric field (E_c) as temperatures decrease. Our investigation reveals exceptional stability in the double remnant polarization (2P_r) of our ferroelectric thin films across a wide temperature range. Specifically, at 30 K, a 2P_r of 36 µC/cm² under an applied electric field of 3.0 MV/cm is achieved. Moreover, we observed a reduced fatigue effect at 30 K in comparison to 300 K. The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO₂ based ferroelectric thin films for cryo-electronics applications.
- hafnia-zirconia solid solution,
- ferroelectricity,
- cryogenic temperature,
- wake-up effect

FullText(HTML)

References(22)

References

[1]	Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99, 102903 doi: 10.1063/1.3634052
[2]	Cheema S S, Kwon D, Shanker N, et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature, 2020, 580, 478 doi: 10.1038/s41586-020-2208-x
[3]	Banerjee W, Kashir A, Kamba S. Hafnium oxide (HfO₂)–A multifunctional oxide: A review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories. Small, 2022, 18, 2107575 doi: 10.1002/smll.202107575
[4]	Khan A I, Keshavarzi A, Datta S. The future of ferroelectric field-effect transistor technology. Nat Electron, 2020, 3, 588 doi: 10.1038/s41928-020-00492-7
[5]	Cao R R, Zhang X M, Liu S, et al. Compact artificial neuron based on anti-ferroelectric transistor. Nat Commun, 2022, 13, 7018 doi: 10.1038/s41467-022-34774-9
[6]	https://trc.nist.gov/cryogenics
[7]	Müller J, Böscke T S, Schröder U, et al. Ferroelectricity in simple binary ZrO₂ and HfO₂. Nano Lett, 2012, 12, 4318 doi: 10.1021/nl302049k
[8]	Henry M D, Smith S W, Lewis R M, et al. Stabilization of ferroelectric phase of Hf_0.58Zr_0.42O₂ on NbN at 4 K. Appl Phys Lett, 2019, 114, 092903 doi: 10.1063/1.5052435
[9]	Hur J, Luo Y C, Wang Z, et al. Characterizing ferroelectric properties of Hf_0.5Zr_0.5O₂ from deep-cryogenic temperature (4 K) to 400 K. IEEE J Explor Solid State Comput Devices Circuits, 2021, 7, 168 doi: 10.1109/JXCDC.2021.3130783
[10]	Park M H, Chung C C, Schenk T, et al. Origin of temperature-dependent ferroelectricity in Si-doped HfO₂. Adv Elect Materials, 2018, 4, 1700489 doi: 10.1002/aelm.201700489
[11]	Zhou D Y, Guan Y, Vopson M M, et al. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films. Acta Mater, 2015, 99, 240 doi: 10.1016/j.actamat.2015.07.035
[12]	Wang D, Wang J L, Li Q A, et al. Stable ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films within a broad working temperature range. Jpn J Appl Phys, 2019, 58, 090910 doi: 10.7567/1347-4065/ab3844
[13]	Pešić M, Fengler F P G, Larcher L, et al. Physical mechanisms behind the field-cycling behavior of HfO₂-based ferroelectric capacitors. Adv Funct Materials, 2016, 26, 4601 doi: 10.1002/adfm.201600590
[14]	Adkins J W, Fina I, Sánchez F, et al. Thermal evolution of ferroelectric behavior in epitaxial Hf_0.5Zr_0.5O₂. Appl Phys Lett, 2020, 117, 142902 doi: 10.1063/5.0015547
[15]	Liu H, Yang Q Y, Jin C J, et al. Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K. Sci China Inf Sci, 2023, 67, 119401 doi: 10.1007/s11432-022-3721-0
[16]	Jiang P F, Luo Q, Xu X X, et al. Wake-up effect in HfO₂-based ferroelectric films. Adv Elect Materials, 2021, 7, 2000728 doi: 10.1002/aelm.202000728
[17]	Silva J P B, Sekhar K C, Negrea R F, et al. Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films. Appl Mater Today, 2022, 26, 101394 doi: 10.1016/j.apmt.2022.101394
[18]	Park M H, Kim H J, Kim Y J, et al. Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf_0.5Zr_0.5O₂ thin films. J Mater Chem C, 2015, 3, 6291 doi: 10.1039/C5TC01074H
[19]	Jiang H, Bhuiyan M A, Liu Z, et al. A study of BEOL processed Hf_0.5Zr_0.5O₂^- based ferroelectric capacitors and their potential for automotive applications. 2020 IEEE International Memory Workshop (IMW), 2020 doi: 10.1109/IMW48823.2020.9108113
[20]	Park M H, Kim H J, Kim Y J, et al. Giant negative electrocaloric effects of Hf_0.5Zr_0.5O₂ thin films. Adv Mater, 2016, 28, 7956 doi: 10.1002/adma.201602787
[21]	Hsiang K Y, Lee J Y, Lou Z F, et al. Cryogenic endurance of anti-ferroelectric and ferroelectric Hf_1-xZr_xO₂ for quantum computing applications. 2023 IEEE International Reliability Physics Symposium (IRPS), 2023 doi: 10.1109/IRPS48203.2023.10118311
[22]	Chen J, Jin C, Yu X, et al. Impact of oxygen vacancy on ferroelectric characteristics and its implication for wake-up and fatigue of HfO₂-based thin films. IEEE Trans Electron Devices, 2022, 69(9), 5297 doi: 10.1109/TED.2022.3190256

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

DOI: 10.1088/1674-4926/45/3/032301

Abstract

References

Proportional views

Catalog

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

DOI: 10.1088/1674-4926/45/3/032301

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition