Fig. 1.
(Color online) (a) PBO efficiency enhancement technique, (b) multi-way power combining techniques, (c) complementary-gain-boosting ultra-wideband technique.
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| Citation: |
Yun Wang, Hongtao Xu. Millimeter-wave PA design techniques in ISSCC 2024[J]. Journal of Semiconductors, 2024, 45(4): 040205. doi: 10.1088/1674-4926/45/4/040205
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Y Wang, H T Xu. Millimeter-wave PA design techniques in ISSCC 2024[J]. J. Semicond, 2024, 45(4): 040205. doi: 10.1088/1674-4926/45/4/040205
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Millimeter-wave PA design techniques in ISSCC 2024
DOI: 10.1088/1674-4926/45/4/040205
More Information
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Yun Wang received the B.S. and M.S. degrees from the University of Electronic Science and Technology of China, Chengdu, China, in 2011 and 2014, respectively, and the Ph.D. degree in physical electronics from the Tokyo Institute of Technology, Tokyo, Japan, in 2019. He was an Intern with the Pohang University of Science and Technology, Pohang, South Korea, in 2013, and Device Technology Laboratories, NTT Corporation, Atsugi, Japan, in 2016. From 2019 to 2021, he was a Research Staff with the Tokyo Institute of Technology. He is currently a Research Associate Professor with Fudan University, Shanghai, China. His research interests include CMOS radio frequency (RF)/millimeter-wave wireless systems, 5G phased-array mobile systems, and satellite communication -
Hongtao Xu received the B.S. degree in electronic engineering from Fudan University, Shanghai, China, in 1997, and the M.A. degree in economics and the Ph.D. degree in electrical and computer engineering from the University of California at Santa Barbara, Santa Barbara, CA, USA, in 2003 and 2005, respectively. He was with the Intel Labs, Hillsboro, OR, USA. In 2015, he joined Fudan University, as a Full Professor. He has authored or coauthored more than 100 journal articles and conference papers. He holds 16 patents in the areas of RF transceiver and front-end modules. His technical interests include innovative analog/RF/millimeter-wave circuits and wireless systems for communication and sensing - Corresponding author: hongtao@fudan.edu.cn
- Revised Date: 2024-03-27 Available Online: 2024-04-01
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References
[1] Zhang X H, Guo H, Chi T Y. A 47GHz 4-way Doherty PA with 23.7dBm P1dB and 21.7%/13.1% PAE at 6/12dB back-off supporting 2000MHz 5G NR 64-QAM OFDM. IEEE International Solid-State Circuits Conference, 2024, 520 doi: 10.1109/ISSCC49657.2024.10454571[2] Oh H, Park S, Lee J, et al. A 24.25-to-29.5GHz extremely compact doherty power amplifier with differential-breaking phase offset achieving 23.7% PAE avg for 5G base-station transceivers. IEEE International Solid-State Circuits Conference, 2024, 522 doi: 10.1109/ISSCC49657.2024.10454406[3] Liu E, Wang H. An ultra-compact 28GHz Doherty power amplifier with an asymmetrically-coupled-transformer output combiner. 2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024, 536 doi: 10.1109/ISSCC49657.2024.10454274[4] Zhu W, Ying J Z, Chen L, et al. A 27.8-to-38.7GHz load-modulated balanced power amplifier with scalable 7-to-1 load-modulated power-combine network achieving 27.2dBm output power and 28.8%/23.2%/16.3%/11.9% peak/6/9/12dB back-off efficiency. 2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024, 534 doi: 10.1109/ISSCC49657.2024.10454540[5] Cimbili B, Bao M Q, Friesicke C, et al. E-band (71-to-86GHz) GaN power amplifier with 4.37W output power and 18.5% PAE for 5G backhaul. 2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024, 528 doi: 10.1109/ISSCC49657.2024.10454306[6] Pashaeifar M, Kumaran A K, De Vreede L C N, et al. A 25.2dBm PSAT, 35-to-43GHz VSWR-resilient chain-weaver eight-way balanced PA with an embedded impedance/power sensor. 2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024, 532 doi: 10.1109/ISSCC49657.2024.10454427[7] Wu W P, Bao X, Chen S L, et al. A 67.8-to-108.2GHz power amplifier with a three-coupled-line-based complementary-gain-boosting technique achieving 442GHz GBW and 23.1% peak PAE. 2024 IEEE International Solid-State Circuits Conference (ISSCC), 2024, 526 doi: 10.1109/ISSCC49657.2024.10454503 -
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