Light-emitting devices based on atomically thin MoSe<sub>2</sub>

Xinyu Zhang; Xuewen Zhang; Hanwei Hu; Vanessa Li Zhang; Weidong Xiao; Guangchao Shi; Jingyuan Qiao; Nan Huang; Ting Yu; Jingzhi Shang

doi:10.1088/1674-4926/45/4/041701

J. Semicond. > 2024, Volume 45 > Issue 4 > 041701

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Light-emitting devices based on atomically thin MoSe₂

Xinyu Zhang¹, Xuewen Zhang¹, Hanwei Hu¹, Vanessa Li Zhang², Weidong Xiao¹, Guangchao Shi¹, Jingyuan Qiao¹, Nan Huang¹, Ting Yu^{2, 3,} and Jingzhi Shang^1,

+ Author Affiliations

1. Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710129, China
2. School of Physics and Technology, Wuhan University, Wuhan 430072, China
3. Wuhan Institute of Quantum Technology, Wuhan 430206, China

Author Bio:

Xinyu Zhang received her B.S. degree from Shaanxi University of Science and Technology and her master’s degree from Northeastern University. At present, she is a doctoral student at Northwestern Polytechnical University under the supervision of Prof. Jingzhi Shang. Her research focuses on the light−matter coupling regimes of TMDs materials based on the on-chip optical microcavities.

Ting Yu professor at the School of Physics and Technology of Wuhan University. He received a doctorate degree from the National University of Singapore in 2003, joined Nanyang Technological University in 2005, and was hired as a full professor (tenured position) of NTU, Singapore in 2017. Dr. Yu has received many prestigious awards including Nanyang Excellence Award for Research and Innovation (2008), National Young Scientist Award, National Research Foundation Fellowship Award (2009). His research interests cover the fabrication of 2D materials and the investigation of their optical, optoelectrical, and magnetic properties for developing novel electronics, optoelectronics, and data storage.

Jingzhi Shang is a professor at the Institute of Flexible Electronics of Northwestern Polytechnical University in China. He obtained a bachelor’s degree in physics and a master’s degree in condensed matter physics from Xiamen University in 2006 and 2009, respectively. In 2014, he finished the PHD study at the School of Mathematics and Physics of Nanyang Technological University in Singapore. Then he worked as a research fellow in the same school till 2018. At present, he is interested in optical investigation of two-dimensional semiconductors and their light-emitting devices.

Corresponding author: Ting Yu, yu.ting@whu.edu.cn; Jingzhi Shang, iamjzshang@nwpu.edu.cn

DOI: 10.1088/1674-4926/45/4/041701

Abstract: Atomically thin MoSe₂ layers, as a core member of the transition metal dichalcogenides (TMDs) family, benefit from their appealing properties, including tunable band gaps, high exciton binding energies, and giant oscillator strengths, thus providing an intriguing platform for optoelectronic applications of light-emitting diodes (LEDs), field-effect transistors (FETs), single-photon emitters (SPEs), and coherent light sources (CLSs). Moreover, these MoSe₂ layers can realize strong excitonic emission in the near-infrared wavelengths, which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection, quantum computing, and quantum information processing. Herein, we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe₂ layers. Firstly, we introduce recent developments in excitonic emission features from atomically thin MoSe₂ and their dependences on typical physical fields. Next, we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe₂ coupled to the diverse forms of optical microcavities. Then, we highlight the promising applications of LEDs, SPEs, and CLSs based on MoSe₂ and their heterostructures. Finally, we summarize the challenges and opportunities for high-quality emission of MoSe₂ and high-performance light-emitting devices.

Key words: MoSe₂, light−matter interaction, exciton, polariton, light-emitting device

1. Introduction

Electrostatic discharge (ESD) phenomena are inevitable during the processes of manufacturing,testing and using electronic products. With the continuously scaled-down CMOS technology,ESD damage to modern integrated circuits is becoming more and more serious^[1]. Silicon controlled rectifiers (SCR) are known as efficient ESD protection devices since they show the relatively highest ESD robustness in the smallest layout area. In order to improve the ESD protection efficiency of traditional one-directional SCRs,various dual-directional SCR (DDSCR) devices have been proposed in the past decade^{[2, 3, 4, 5]}. DDSCRs not only possess as strong protection capability as one-directional SCRs,but also can realize dual-directional ESD protection with a significantly reduced chip area. However,the conventional DDSCRs still have some problems such as a low holding voltage ( $V_{\rm h})$ and weak latch-up immunity,limiting their practical applications as effective ESD protection devices^{[3, 4, 5, 6, 7, 8, 10, 11]}.

In order to increase the $V_{\rm h}$ and reduce the latch-up risk of DDSCRs,we design a novel DDSCR device with an embedded PNP structure (DDSCR-PNP) in this paper. Experimental devices are fabricated in a 0.35 $\mu$ m Bipolar-CMOS-DMOS (BCD) process and investigated by transmission line pulse (TLP) tests and Sentaurus simulations. The results indicate that the DDSCR-PNP has a much higher $V_{\rm h}$ and a lower leakage current ( $I_{\rm L})$ than conventional ones.

2. Structure design and mechanism analysis

Cross sections and equivalent circuits under one-directional ESD stress of the conventional DDSCR and the proposed DDSCR-PNP with the same length and width are shown in Figures 1(a) and 1(b),respectively. Compared to the floating P well of DDSCR,the P well of DDSCR-PNP is directly grounded.

Figure Fig1. Cross sections and equivalent circuits of (a) DDSCR and (b) DDSCR-PNP,respectively.

DownLoad: Full-Size Img PowerPoint

The discharge path of DDSCR under one-directional ESD stress is shown in Figure1(a). When a positive ESD stress is applied between Node 1 and Node 2 of the DDSCR,the avalanche breakdown occurs at the interface of the PN junction formed by the N well and P well,generating a large avalanche current,which helps to turn on the parasitic NPN transistor firstly. Then,the parasitic PNP_1 is turned on soon due to the positive feedback effect. Finally,the ESD current is discharged from Node 1 to Node 2 through Path 1 shown in Figure1(a),resulting from the turned-on SCR. The positive feedback of those bipolar-junction transistors (BJTs) in DDSCR causes a strong current discharge capability but a low holding voltage.

Compared to the DDSCR,the discharge paths in DDSCR-PNP are shown in . When a positive ESD pulse is stressed between Node 1 and Node 2 of the DDSCR-PNP,a similar avalanche breakdown mechanism occurs. So the trigger voltage ( $V_{\rm t})$ of both devices will be almost the same. The only difference is that the DDSCR-PNP has an additional turned-on PNP_2,which helps to clamp the voltage between Node 1 and Node 2 by weakening the positive feedback of BJTs. As a result,there are two discharge paths Path 1 and Path 2 in parallel,so the DDSCR-PNP can exhibit higher $V_{\rm h}$ than the conventional DDSCR. In addition,when the DDSCR-PNP is used for dual-directional ESD protection,the P $^+$ implantation in the P well should be grounded through a reverse diode to avoid the large leakage current resulted from a negative ESD pulse happening on Node 1 or Node 2.

3. Results and discussion

3.1 TLP test results and analysis

In order to analyse the ESD characteristics of DDSCR and DDSCR-PNP,experimental devices with the same layout area ( $W$ $=$ 73 $\mu$ m , $L$ $=$ 128 $\mu$ m) are fabricated in a 0.35 $\mu$ m BCD process and measured by a Barth 4002 TLP test system. A series of TLP pulses with 10 ns rising time,a 100 ns pulse width and an internal of 1 s are stressed on the devices for obtaining the TLP current--voltage ( $I$ - $V)$ curves. Moreover,during each TLP pulse internal,a DC bias about 1.1 times of the operating voltage of the kernel circuit is stressed on the devices for obtaining the leakage current--voltage ( $I_{\rm L}-V)$ curves.

Typical TLP testing results of devices with the same device width and P well width (12 $\mu$ m) are shown in . With the increasing TLP pulse voltage,the off state (from A to B),the snapback state (from B to C) and the holding state (from C to D) are sequentially shown in both devices,as marked in the $I$ -- $V$ curve of DDSCR-PNP. Before the thermal breakdown,the $I_{\rm L}$ of DDSCR-PNP and DDSCR maintains in the order of 10^-9 A and 10^-6 A,respectively. When the TLP pulse current is increased to 4.5 A,the $I_{\rm L}$ of DDSCR-PNP rises to the order of 10^-3 A,indicating the failure of DDSCR-PNP. When the TLP pulse current is further increased to 8.5 A,the DDSCR fails too.

Figure Fig2. TLP

$I$ -

$V$ curves of DDSCR and DDSCR-PNP.

DownLoad: Full-Size Img PowerPoint

According to the critical point between the off and snapback states,the $V_{\rm t}$ of both DDSCR and DDSCR-PNP are about 65 V. The DDSCR-PNP has a lower second failure current ( $I_{\rm t2})$ than the DDSCR,but it is still robust enough ( $I_{\rm t2}$ $\approx$ 4.5~A). On the other hand,the DDSCR-PNP has a much higher $V_{\rm h}$ (25.6 V) than the DDSCR (12.8 V),so the latch-up immunity of DDSCR-PNP is remarkably enhanced. Moreover,the DDSCR-PNP has a much smaller $I_{\rm L}$ (1.2 $\times$ 10^-9 A) than the DDSCR (4.9 $\times$ 10^-6 A),resulting in lower power consumption and miss-trigger risk.

Then,a series of DDSCR-PNP devices (named as DUT1,DUT2,DUT3) with different P well widths (12.6 $\mu$ m,11.6 $\mu$ m,10.6 $\mu$ m) are fabricated and measured. The TLP testing results are shown in . With the increasing P well width,the $V_{\rm h}$ of DUT3,DUT2,DUT1 increases from 22.6 to 26.8 V. However,when the P well width increases to 12.6 $\mu$ m, $I_{\rm L}$ jumps to the order of 10^-7 A and shows obvious fluctuations,indicating that the device is working in an unstable state.

Figure Fig3. TLP

$I$ -

$V$ curves of DDSCR-PNP devices with different P well widths.

DownLoad: Full-Size Img PowerPoint

The experiment results can be analyzed by comparing DDSCR-PNP with DDSCR. In the DDSCR,the collector current $I_{\rm C}$ of the vertical PNP_1 contributes a lot to $I_{\rm L}$ . In the DDSCR-PNP,the lateral PNP_2 conducts a large part of ESD current,and the ESD current across the vertical PNP_1 is significantly reduced,helping to suppress the increase of $I_{\rm L}$ . Therefore, $I_{\rm L}$ decreases from 4.9 $\times$ 10 $^{-7}$ A (DDSCR) to 1.2 $\times$ 10^-9 A (DDSCR-PNP). However,the conducting capability of the lateral PNP_2 is gradually weakened with the increasing P well width,which in contrary results in an increasing current through the vertical PNP_1. As a result, $I_{\rm L}$ increases with the increasing P well width,and even the unstable state appears finally.

3.2 Simulation and analysis

In order to understand their different working mechanisms,DDSCR and DDSCR-PNP are simulated by using Sentaurus. shows the distributions of total current density ( $J)$ in the two devices under an ESD current of 1 $\times$ 10^-3 A. It can be clearly seen that,an SCR current discharge path formed by P⁺/N well/P well/N well/N⁺ appears in both DDSCR and DDSCR-PNP,but the DDSCR-PNP has an additional PNP current discharge path formed by the P⁺/N well/P well. The remarkable merit of the PNP current discharge path parallel with the SCR path is to enhance the voltage clamping capability^[9],thus,the latch-up immunity of DDSCR-PNP can be greatly improved. Therefore,the simulation result confirms the theoretical analysis made in Section 2.

Figure Fig4. Total current density distributions in DDSCR and DDSCR-PNP under an ESD current pulse of 1

$\times$ 10^-3 A.

DownLoad: Full-Size Img PowerPoint

Furthermore,the reasons leading to the different $I_{\rm L}$ in DDSCR and DDSCR-PNP are also studied by simulation. shows the distributions of the total current density in the two devices under an ESD stress of 1 $\times$ 10^-6 $A. It can be seen that the current is mainly discharged from Node1 to the substrate through the vertical PNP_1 in the DDSCR,while in the DDSCR-PNP,the current is mainly discharged by the lateral PNP_2,and the current discharged through the vertical PNP_1 is significantly weakened. Thus,it is confirmed that the lateral PNP_2 can help to decrease the current injected from Node1 into the P substrate,resulting in the greatly reduced$ I_{\rm L}$ in the DDSCR-PNP.

Figure Fig5. Total current density distributions in DDSCR and DDSCR-PNP under an ESD current pulse of 1

$\times$ 10^-6 A.

DownLoad: Full-Size Img PowerPoint

4. Conclusions

A novel DDSCR-PNP device has been proposed and verified in a 0.35 $\mu$ m BCD process. The ESD performances of the DDSCR-PNP and the conventional DDSCR are studied and compared by TLP tests and simulations. The TLP test results show that the DDSCR-PNP has a higher holding voltage about 25.6 V and a lower leakage current about 1 $\times$ 10^-9 A,and thus a better latch-up immunity than the DDSCR. The mechanism analyses for increased holding voltage and decreased leakage current in DDSCR-PNP are confirmed by simulation results. The proposed DDSCR-PNP provides a good ESD protection solution for high-voltage integrated circuits.

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Fig. 1. (Color online) Intriguing applications based on atomically thin MoSe₂, including light-emitting diodes, single-photon emitters, and coherent light sources.

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Fig. 2. (Color online) (a−d) ARPES spectra of MoSe₂ thin layers with different thicknesses^[37]. (e) Schematic of band structures of MoX₂ and WX₂ monolayers^[40]. (f) Classification of excitonic quasiparticles, including neutral excitons (X⁰), charged excitons (X*), biexcitons (XX), and interlayer excitons (X^I).

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Fig. 3. (Color online) (a) Schematic, optical image, and PL mapping of the freestanding bilayer MoSe₂^[47]. (b) The PL spectra both of the freestanding bilayer MoSe₂ and the one on SiO₂ substrate, where the "X", "T", and "A" refer to the emission peak of biexcitons, trions, and excitons, respectively^[47]. (c) The relationship between PL intensities of A and X^[47]. (d) Illustration of different kinds of excitons in real space^[15]. (e) Measured and simulated reflection contrast spectra (R_sam/R_sub) of h-BN-encapsulated monolayer MoSe₂^[15]. (f) Measured and simulated reflection contrast spectra of h-BN-encapsulated bilayer MoSe₂^[15].

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Fig. 4. (Color online) (a) PL spectra of monolayer MoSe₂ at different temperatures^[48]. (b) Two pronounced PL peaks of monolayer MoSe₂ at 20 K: the higher-energy X⁰ and the lower-energy X* at 1.659 and 1.63 eV, respectively. The inset indicates the X* binding energy of approximately 30 meV^[57]. (c) Temperature-dependent PL spectra of monolayer MoSe₂^[57]. (d) PL spectra of monolayer MoSe₂ measured in the temperature range from 0 to 300 K^[59]. (e) A and B excitonic energies at different temperatures, which were fitted by the Varshni relationships^[59].

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Fig. 5. (Color online) (a) PL and reflectance contrast (RC) spectra of h-BN encapsulated monolayer MoSe₂ at 10 K, where the X^b and X^T represent the bright neutral excitons and the trions bands, respectively^[55]. (b) PL intensity map of encapsulated monolayer MoSe₂ at different in-plane magnetic fields^[55]. (c) PL spectra of samples measured at 0 and 31 T^[55]. (d) Magnetic field dependence of PL intensity map of monolayer MoSe₂^[56]. (e) Gate voltage dependencies of PL intensities for X* and X⁰, respectively^[57]. (f) Calculation results of the exciton band structures of bright KK and dark KΛ in the MoSe₂ bilayer^[54].

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Fig. 6. (Color online) (a) Schematic of a monolayer-MoSe₂ coupled plasmonic microcavity^[26]. (b) Simulated scattering spectra of MoSe₂ coupled microcavities, where the blue dashed and the red solid lines correspond to the MoSe₂ monolayers without/with the Al₂O₃ coating, respectively. The yellow PL spectrum is from the MoSe₂ monolayer on a quartz substrate^[26]. (c) The distributions of surface charge and electric field^[26]. (d) Illustration of a MoSe₂ monolayer encapsulated by h-BN on SiO₂/Si^[7]. (e) The PL spectrum of MoSe₂ encapsulated by h-BN layers exhibits the neutral (X) and the charged (T) exciton bands at 7 K^[7]. (f) The bottom h-BN thickness dependence of X radiative lifetime of monolayer MoSe₂. The red dotted line shows the intensities of the electromagnetic field. The inset presents the normalized time-resolved photoluminescence (TRPL) intensities with different bottom h-BN layers^[7]. (g) Diagram of the WSe₂/MoSe₂ heterostructure coupled with Au nanodisks on the PPhC^[30]. (h) The energy dependences of the averaged Purcell factors of γ_mean and the coefficients of σ(γ)/γ_mean, respectively^[30]. (i) The left panel is the typical interlayer excitons in a heterostructure and the right panel represents long-lived interlayer excitons in a heterostructure coupled with the nano-photonic microcavity^[30].

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Fig. 7. (Color online) (a) Illustration of exciton−photon interaction in the case of an F−P microcavity system. (b) Schematic of angle-resolved optical response in the exciton−photon strong coupling regime, exhibiting the anti-crossing characteristics^[77]. (c) Structures of monolayer MoSe₂ integrating into an open cavity (left) and a monolithic cavity (right), respectively^[33]. (d) Schematic of the self-hybridized F−P cavity in bulk TMDs^[78].

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Fig. 8. (Color online) Various polaritons are formed in TMDs-coupled cavities, including EPs, PEPs, and phonon-polaritons.

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Fig. 9. (Color online) (a, b) A tunable hemispherical cavity coupled with the MoSe₂/hBN heterostructures formed by a planar and a concave DBR and the corresponding strong coupling behavior with a Rabi splitting of 29 meV, respectively^[27]. (c) Schematic of a MoSe₂/h-BN heterostructure embedded in the F−P microcavity^[34]. (d) Angle-resolved photoluminescence (ARPL) image of a MoSe₂/h-BN heterostructure in a monolithic cavity^[34]. (e) Schematic of a high-quality F−P microcavity device embedded with a h-BN encapsulated monolayer MoSe₂^[29]. (f) Measured and fitted reflection contrast spectra of the bare cavity mode and the one with hBN layers^[29]. (g) ARR map of a MoSe₂/WS₂ heterostructure measured at 5 K^[8].

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Fig. 10. (Color online) (a) Schematic of the microcavity device embedded with a MoSe₂ monolayer and four GaAs quantum wells^[35]. (b) The calculated reflectivity spectrum of the Tamm-plasmon microcavity^[35]. (c) ARPL of the Tamm microcavity of a MoSe₂ monolayer at 4 K^[35]. (d) Illustration of a MoSe₂ monolayer encapsulated by h-BN is inserted into an F−P microcavity structure and the optical microscope image of the full device^[23]. (e) The pump-power dependent polariton dispersions for a MoSe₂ microcavity^[23].

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Fig. 11. (Color online) (a) Illustration of the structure of a Tamm microcavity^[33]. (b) A Tamm-plasmon microcavity employs a monolayer MoSe₂ and four embedded GaAs quantum wells as active layers^[36]. (c) Power dependences of PL intensity and linewidth for MoSe₂ monolayer, respectively^[36]. (d) Blueshift of the polariton mode as a function of excitation power^[36]. (e) Schematic of a MoSe₂-integrated Tamm microcavity^[94]. (f) ARPL map of a Tamm microcavity, in which the UPB and LPB are indicated by black dotted lines^[94].

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Fig. 12. (Color online) (a) The structure of MoSe₂/WSe₂ heterostructure device^[18]. (b) Illustration of Nb-doping mechanism^[19]. (c) The rectifying behavior of p−n diode based on MoSe₂^[19]. (d) The formation process of a p−i−n junction^[3]. (e) Light-emitting zones of WSe₂, MoSe₂ and WS₂ devices, respectively^[3]. (f) Illustration of a two-terminal LED^[3].

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Fig. 13. (Color online) (a) PL intensity map of MoSe₂ monolayer in the range of 683−855 nm^[21]. (b) PL spectra of two samples on gold substrates^[21]. (c) PL spectra for discrete QDA, QDB, and QDC measured at varied magnetic fields^[21]. (d) Illustration of MoSe₂ monolayer covering the holes with different sizes to create exciton traps^[20]. (e) PL spectra collected at a quantum emitter and a flat region^[20]. (f) PL spectra of Moiré-confined interlayer excitons^[121].

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Fig. 14. (Color online) (a) Schematic of a WSe₂/MoSe₂ heterostructure on the silicon−nitride grating cavity system^[22]. (b) Band alignment of a WSe₂/MoSe₂ heterostructure^[22]. (c) The pump power dependences of photon occupancy (I_p) and linewidth^[22]. (d) Optical image of the MoSe₂/h-BN quantum wells^[27]. (e) Illustration of a monolayer MoSe₂ integrated with the photonic crystal microcavity^[81]. (f) ARR of Dodecanol/MoSe₂/Dodecanol-PC on the device with the detuning value of 0.1 ± 0.2 meV approximately^[81].

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Table 1. Strong coupling regime in atomically thin MoSe₂.

Materials	Preparation technique of MoSe₂	Microcavity type	T (K)	Rabi splitting (2hΩ)/ coupling strength (g)	Ref.
1L MoSe₂	Mechanical exfoliation	Open cavity	4	17.5 meV	[33]
1L MoSe₂	Mechanical exfoliation	F−P cavity	4	29.3 meV	[33]
1-dodecanol/1L MoSe₂/1-dodecanol	Mechanical exfoliation	Photonic crystal cavity	5	43 ± 3 meV	[81]
1L MoSe₂/h-BN	Mechanical exfoliation	F−P cavity	4.2	20 meV	[27]
MoSe₂/h-BN/MoSe₂/h-BN	Mechanical exfoliation	F−P cavity	4.2	29 meV	[27]
1L MoSe₂/h-BN	CVD growth	Open cavity	4	17 meV	[34]
		F−P cavity	5	34 ± 4 meV
		F−P cavity	150	31 ± 4 meV
MoSe₂/WS₂	Mechanical exfoliation	F−P cavity	4	g is 17.1 ± 0.1	[8]
h-BN/1L MoSe₂/h-BN	Mechanical exfoliation	F−P cavity	4.2	15.2 ± 0.1 meV	[82]
h-BN/1L MoSe₂/h-BN	Mechanical exfoliation	F−P cavity	5	28 meV	[29]
1L MoSe₂-GaAs quantum wells	Mechanical exfoliation	Tamm cavity	4	g is 20	[35]
1L MoSe₂-GaAs quantum wells	Mechanical exfoliation	Tamm cavity	4.2	g is 20	[36]
h-BN/1L MoSe₂-GaAs quantum well	CVD growth	F−P cavity	4	25 ± 2 meV	[23]
1L MoSe₂	Mechanical exfoliation	Tamm cavity	4	33.5 meV	[33]

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Xiuwen Bi, Hailian Liang, Xiaofeng Gu, Long Huang. Design of novel DDSCR with embedded PNP structure for ESD protection[J]. Journal of Semiconductors, 2015, 36(12): 124007. doi: 10.1088/1674-4926/36/12/124007

X W Bi, H L Liang, X F Gu, L Huang. Design of novel DDSCR with embedded PNP structure for ESD protection[J]. J. Semicond., 2015, 36(12): 124007. doi: 10.1088/1674-4926/36/12/124007.

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Received: 12 August 2023 Revised: 23 October 2023 Online: Accepted Manuscript: 02 January 2024Uncorrected proof: 04 January 2024Published: 10 April 2024

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Xiuwen Bi, Hailian Liang, Xiaofeng Gu, Long Huang. Design of novel DDSCR with embedded PNP structure for ESD protection[J]. Journal of Semiconductors, 2015, 36(12): 124007. doi: 10.1088/1674-4926/36/12/124007 ****X W Bi, H L Liang, X F Gu, L Huang. Design of novel DDSCR with embedded PNP structure for ESD protection[J]. J. Semicond., 2015, 36(12): 124007. doi: 10.1088/1674-4926/36/12/124007.

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Xinyu Zhang, Xuewen Zhang, Hanwei Hu, Vanessa Li Zhang, Weidong Xiao, Guangchao Shi, Jingyuan Qiao, Nan Huang, Ting Yu, Jingzhi Shang. Light-emitting devices based on atomically thin MoSe₂[J]. Journal of Semiconductors, 2024, 45(4): 041701. doi: 10.1088/1674-4926/45/4/041701 ****

X Y Zhang, X W Zhang, H W Hu, V L Zhang, W D Xiao, G C Shi, J Y Qiao, N Huang, T Yu, J Z Shang. Light-emitting devices based on atomically thin MoSe₂[J]. J. Semicond, 2024, 45(4): 041701. doi: 10.1088/1674-4926/45/4/041701

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Light-emitting devices based on atomically thin MoSe₂

DOI: 10.1088/1674-4926/45/4/041701

1.
Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710129, China
2.
School of Physics and Technology, Wuhan University, Wuhan 430072, China
3.
Wuhan Institute of Quantum Technology, Wuhan 430206, China

More Information

Xinyu Zhang received her B.S. degree from Shaanxi University of Science and Technology and her master’s degree from Northeastern University. At present, she is a doctoral student at Northwestern Polytechnical University under the supervision of Prof. Jingzhi Shang. Her research focuses on the light−matter coupling regimes of TMDs materials based on the on-chip optical microcavities
Ting Yu professor at the School of Physics and Technology of Wuhan University. He received a doctorate degree from the National University of Singapore in 2003, joined Nanyang Technological University in 2005, and was hired as a full professor (tenured position) of NTU, Singapore in 2017. Dr. Yu has received many prestigious awards including Nanyang Excellence Award for Research and Innovation (2008), National Young Scientist Award, National Research Foundation Fellowship Award (2009). His research interests cover the fabrication of 2D materials and the investigation of their optical, optoelectrical, and magnetic properties for developing novel electronics, optoelectronics, and data storage
Jingzhi Shang is a professor at the Institute of Flexible Electronics of Northwestern Polytechnical University in China. He obtained a bachelor’s degree in physics and a master’s degree in condensed matter physics from Xiamen University in 2006 and 2009, respectively. In 2014, he finished the PHD study at the School of Mathematics and Physics of Nanyang Technological University in Singapore. Then he worked as a research fellow in the same school till 2018. At present, he is interested in optical investigation of two-dimensional semiconductors and their light-emitting devices
Corresponding author: yu.ting@whu.edu.cn; iamjzshang@nwpu.edu.cn
Received Date: 2023-08-12
Revised Date: 2023-10-23

Available Online: 2024-01-02

Abstract

Abstract

Atomically thin MoSe₂ layers, as a core member of the transition metal dichalcogenides (TMDs) family, benefit from their appealing properties, including tunable band gaps, high exciton binding energies, and giant oscillator strengths, thus providing an intriguing platform for optoelectronic applications of light-emitting diodes (LEDs), field-effect transistors (FETs), single-photon emitters (SPEs), and coherent light sources (CLSs). Moreover, these MoSe₂ layers can realize strong excitonic emission in the near-infrared wavelengths, which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection, quantum computing, and quantum information processing. Herein, we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe₂ layers. Firstly, we introduce recent developments in excitonic emission features from atomically thin MoSe₂ and their dependences on typical physical fields. Next, we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe₂ coupled to the diverse forms of optical microcavities. Then, we highlight the promising applications of LEDs, SPEs, and CLSs based on MoSe₂ and their heterostructures. Finally, we summarize the challenges and opportunities for high-quality emission of MoSe₂ and high-performance light-emitting devices.
- MoSe₂,
- light−matter interaction,
- exciton,
- polariton,
- light-emitting device

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1. Introduction

Electrostatic discharge (ESD) phenomena are inevitable during the processes of manufacturing,testing and using electronic products. With the continuously scaled-down CMOS technology,ESD damage to modern integrated circuits is becoming more and more serious^[1]. Silicon controlled rectifiers (SCR) are known as efficient ESD protection devices since they show the relatively highest ESD robustness in the smallest layout area. In order to improve the ESD protection efficiency of traditional one-directional SCRs,various dual-directional SCR (DDSCR) devices have been proposed in the past decade^{[2, 3, 4, 5]}. DDSCRs not only possess as strong protection capability as one-directional SCRs,but also can realize dual-directional ESD protection with a significantly reduced chip area. However,the conventional DDSCRs still have some problems such as a low holding voltage ( $V_{\rm h})$ and weak latch-up immunity,limiting their practical applications as effective ESD protection devices^{[3, 4, 5, 6, 7, 8, 10, 11]}.

In order to increase the $V_{\rm h}$ and reduce the latch-up risk of DDSCRs,we design a novel DDSCR device with an embedded PNP structure (DDSCR-PNP) in this paper. Experimental devices are fabricated in a 0.35 $\mu$ m Bipolar-CMOS-DMOS (BCD) process and investigated by transmission line pulse (TLP) tests and Sentaurus simulations. The results indicate that the DDSCR-PNP has a much higher $V_{\rm h}$ and a lower leakage current ( $I_{\rm L})$ than conventional ones.

2. Structure design and mechanism analysis

Cross sections and equivalent circuits under one-directional ESD stress of the conventional DDSCR and the proposed DDSCR-PNP with the same length and width are shown in Figures 1(a) and 1(b),respectively. Compared to the floating P well of DDSCR,the P well of DDSCR-PNP is directly grounded.

Figure Fig1. Cross sections and equivalent circuits of (a) DDSCR and (b) DDSCR-PNP,respectively.

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The discharge path of DDSCR under one-directional ESD stress is shown in Figure1(a). When a positive ESD stress is applied between Node 1 and Node 2 of the DDSCR,the avalanche breakdown occurs at the interface of the PN junction formed by the N well and P well,generating a large avalanche current,which helps to turn on the parasitic NPN transistor firstly. Then,the parasitic PNP_1 is turned on soon due to the positive feedback effect. Finally,the ESD current is discharged from Node 1 to Node 2 through Path 1 shown in Figure1(a),resulting from the turned-on SCR. The positive feedback of those bipolar-junction transistors (BJTs) in DDSCR causes a strong current discharge capability but a low holding voltage.

Compared to the DDSCR,the discharge paths in DDSCR-PNP are shown in . When a positive ESD pulse is stressed between Node 1 and Node 2 of the DDSCR-PNP,a similar avalanche breakdown mechanism occurs. So the trigger voltage ( $V_{\rm t})$ of both devices will be almost the same. The only difference is that the DDSCR-PNP has an additional turned-on PNP_2,which helps to clamp the voltage between Node 1 and Node 2 by weakening the positive feedback of BJTs. As a result,there are two discharge paths Path 1 and Path 2 in parallel,so the DDSCR-PNP can exhibit higher $V_{\rm h}$ than the conventional DDSCR. In addition,when the DDSCR-PNP is used for dual-directional ESD protection,the P $^+$ implantation in the P well should be grounded through a reverse diode to avoid the large leakage current resulted from a negative ESD pulse happening on Node 1 or Node 2.

3. Results and discussion

3.1 TLP test results and analysis

In order to analyse the ESD characteristics of DDSCR and DDSCR-PNP,experimental devices with the same layout area ( $W$ $=$ 73 $\mu$ m , $L$ $=$ 128 $\mu$ m) are fabricated in a 0.35 $\mu$ m BCD process and measured by a Barth 4002 TLP test system. A series of TLP pulses with 10 ns rising time,a 100 ns pulse width and an internal of 1 s are stressed on the devices for obtaining the TLP current--voltage ( $I$ - $V)$ curves. Moreover,during each TLP pulse internal,a DC bias about 1.1 times of the operating voltage of the kernel circuit is stressed on the devices for obtaining the leakage current--voltage ( $I_{\rm L}-V)$ curves.

Typical TLP testing results of devices with the same device width and P well width (12 $\mu$ m) are shown in . With the increasing TLP pulse voltage,the off state (from A to B),the snapback state (from B to C) and the holding state (from C to D) are sequentially shown in both devices,as marked in the $I$ -- $V$ curve of DDSCR-PNP. Before the thermal breakdown,the $I_{\rm L}$ of DDSCR-PNP and DDSCR maintains in the order of 10^-9 A and 10^-6 A,respectively. When the TLP pulse current is increased to 4.5 A,the $I_{\rm L}$ of DDSCR-PNP rises to the order of 10^-3 A,indicating the failure of DDSCR-PNP. When the TLP pulse current is further increased to 8.5 A,the DDSCR fails too.

TLP $I$ - $V$ curves of DDSCR and DDSCR-PNP.

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According to the critical point between the off and snapback states,the $V_{\rm t}$ of both DDSCR and DDSCR-PNP are about 65 V. The DDSCR-PNP has a lower second failure current ( $I_{\rm t2})$ than the DDSCR,but it is still robust enough ( $I_{\rm t2}$ $\approx$ 4.5~A). On the other hand,the DDSCR-PNP has a much higher $V_{\rm h}$ (25.6 V) than the DDSCR (12.8 V),so the latch-up immunity of DDSCR-PNP is remarkably enhanced. Moreover,the DDSCR-PNP has a much smaller $I_{\rm L}$ (1.2 $\times$ 10^-9 A) than the DDSCR (4.9 $\times$ 10^-6 A),resulting in lower power consumption and miss-trigger risk.

Then,a series of DDSCR-PNP devices (named as DUT1,DUT2,DUT3) with different P well widths (12.6 $\mu$ m,11.6 $\mu$ m,10.6 $\mu$ m) are fabricated and measured. The TLP testing results are shown in . With the increasing P well width,the $V_{\rm h}$ of DUT3,DUT2,DUT1 increases from 22.6 to 26.8 V. However,when the P well width increases to 12.6 $\mu$ m, $I_{\rm L}$ jumps to the order of 10^-7 A and shows obvious fluctuations,indicating that the device is working in an unstable state.

TLP $I$ - $V$ curves of DDSCR-PNP devices with different P well widths.

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The experiment results can be analyzed by comparing DDSCR-PNP with DDSCR. In the DDSCR,the collector current $I_{\rm C}$ of the vertical PNP_1 contributes a lot to $I_{\rm L}$ . In the DDSCR-PNP,the lateral PNP_2 conducts a large part of ESD current,and the ESD current across the vertical PNP_1 is significantly reduced,helping to suppress the increase of $I_{\rm L}$ . Therefore, $I_{\rm L}$ decreases from 4.9 $\times$ 10 $^{-7}$ A (DDSCR) to 1.2 $\times$ 10^-9 A (DDSCR-PNP). However,the conducting capability of the lateral PNP_2 is gradually weakened with the increasing P well width,which in contrary results in an increasing current through the vertical PNP_1. As a result, $I_{\rm L}$ increases with the increasing P well width,and even the unstable state appears finally.

3.2 Simulation and analysis

In order to understand their different working mechanisms,DDSCR and DDSCR-PNP are simulated by using Sentaurus. shows the distributions of total current density ( $J)$ in the two devices under an ESD current of 1 $\times$ 10^-3 A. It can be clearly seen that,an SCR current discharge path formed by P⁺/N well/P well/N well/N⁺ appears in both DDSCR and DDSCR-PNP,but the DDSCR-PNP has an additional PNP current discharge path formed by the P⁺/N well/P well. The remarkable merit of the PNP current discharge path parallel with the SCR path is to enhance the voltage clamping capability^[9],thus,the latch-up immunity of DDSCR-PNP can be greatly improved. Therefore,the simulation result confirms the theoretical analysis made in Section 2.

Total current density distributions in DDSCR and DDSCR-PNP under an ESD current pulse of 1 $\times$ 10^-3 A.

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Furthermore,the reasons leading to the different $I_{\rm L}$ in DDSCR and DDSCR-PNP are also studied by simulation. shows the distributions of the total current density in the two devices under an ESD stress of 1 $\times$ 10^-6 $A. It can be seen that the current is mainly discharged from Node1 to the substrate through the vertical PNP_1 in the DDSCR,while in the DDSCR-PNP,the current is mainly discharged by the lateral PNP_2,and the current discharged through the vertical PNP_1 is significantly weakened. Thus,it is confirmed that the lateral PNP_2 can help to decrease the current injected from Node1 into the P substrate,resulting in the greatly reduced$ I_{\rm L}$ in the DDSCR-PNP.

Total current density distributions in DDSCR and DDSCR-PNP under an ESD current pulse of 1 $\times$ 10^-6 A.

DownLoad: Full-Size Img PowerPoint

4. Conclusions

A novel DDSCR-PNP device has been proposed and verified in a 0.35 $\mu$ m BCD process. The ESD performances of the DDSCR-PNP and the conventional DDSCR are studied and compared by TLP tests and simulations. The TLP test results show that the DDSCR-PNP has a higher holding voltage about 25.6 V and a lower leakage current about 1 $\times$ 10^-9 A,and thus a better latch-up immunity than the DDSCR. The mechanism analyses for increased holding voltage and decreased leakage current in DDSCR-PNP are confirmed by simulation results. The proposed DDSCR-PNP provides a good ESD protection solution for high-voltage integrated circuits.

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