Chin. J. Semicond. > 1987, Volume 8 > Issue 6 > 643-649
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GaAs(100)表面成分的变化引起费米能级钉扎位置变动的一种新解释

张翔九

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(6): 643-649
      张翔九. GaAs(100)表面成分的变化引起费米能级钉扎位置变动的一种新解释[J]. 半导体学报(英文版), 1987, 8(6): 643-649.
      Citation:
      张翔九. GaAs(100)表面成分的变化引起费米能级钉扎位置变动的一种新解释[J]. 半导体学报(英文版), 1987, 8(6): 643-649.
      shu

      • Received Date: 2015-08-19

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