Citation: |
Zhang Jijun, Jie Wanqi. Growth and Properties of Cd0.8Mn0.2Te Crystal[J]. Journal of Semiconductors, 2006, 27(6): 1026-1029.
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Zhang J J, Jie W Q. Growth and Properties of Cd0.8Mn0.2Te Crystal[J]. Chin. J. Semicond., 2006, 27(6): 1026.
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Growth and Properties of Cd0.8Mn0.2Te Crystal
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Abstract
By optimizing growth parameters,a vertical Bridgman method is successfully used to grow a Cd0.8Mn0.2Te crystal with a size of Φ30mm×120mm.The as-grown crystal is characterized by X-ray powder diffractometer,X-ray double-crystal diffractometer,ultraviolet visible-near infrared spectrum,and IR transmittance and resistivity measurements.The results show that the as-grown crystal has a cubic structure with lattice constant a≈0.6454nm,and its absorption edge is 720nm,corresponding to the band gap of 1.722eV.The results also show high crystallinity,high IR transmittance,and high resistivity.The effect of crystal defects on the IR transmittance and resistivity is discussed. -
References
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